The influence of Mn content on luminescence properties in Mn-doped ZnO films deposited by ultrasonic spray assisted chemical vapor deposition

2011 ◽  
Vol 257 (14) ◽  
pp. 6085-6088 ◽  
Author(s):  
D. Shuang ◽  
X.X. Zhu ◽  
J.B. Wang ◽  
X.L. Zhong ◽  
G.J. Huang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Luminescence Properties ◽  
Zno Films ◽  
Ultrasonic Spray ◽  
Mn Content ◽  
Doped Zno ◽  
Mn Doped

scholarly journals Properties of In-Doped ZnO Films Grown by Metalorganic Chemical Vapor Deposition on GaN(0001) Templates

2009 ◽  
Vol 39 (5) ◽  
pp. 608-611 ◽  
Author(s):  
Tammy Ben-Yaacov ◽  
Tommy Ive ◽  
Chris G. Van de Walle ◽  
Umesh K. Mishra ◽  
James S. Speck ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Zno Films ◽  
Doped Zno ◽  
Metalorganic Chemical

Boron Doping Effects on the Electro-optical Properties of Zinc Oxide Thin Films Deposited by Low-Pressure Chemical Vapor Deposition Process

2006 ◽  
Vol 928 ◽  
Author(s):  
Jerome Steinhauser ◽  
Sylvie Faÿ ◽  
Romain Schlüchter ◽  
Seung Yeop Myong ◽  
Evelyne Vallat ◽  
...  
Keyword(s):  
Grain Size ◽  
Zinc Oxide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Free Carrier ◽  
Zno Films ◽  
Pressure Chemical ◽  
Doped Zno

ABSTRACTBoron-doped zinc oxide (ZnO) films deposited by Low-Pressure Chemical Vapor Deposition (LPCVD) technique are used as Transparent Conductive Oxide (TCO) to contact thin-film silicon solar cells. In this paper, the effect of boron introduced as dopant during ZnO formation is studied. These films are highly transparent in the visible range, whereas in the near infrared region their transmittance decreases with the increase of boron content due to free carrier absorption (FCA). A shifting of the fondamental band gap is also observed. The resistivity decreases of about one order of magnitude with the increase of the doping ratio ([B2H6]/[DEZ]) from 0 to 2. This resistivity drop is mainly due to an increase of the free carrier concentration. In low doped samples, Hall mobility increases with grain size, whereas it shows no grain size dependence in highly doped layers. This suggest that the scattering by grain-boundary is the main limiting factor for transport in low doped ZnO samples, whereas in highly doped ZnO films transport is controlled by the ionized impurity scattering within the grains.

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