A study of TaxC1−x coatings deposited on biomedical 316L stainless steel by radio-frequency magnetron sputtering

2010 ◽  
Vol 257 (3) ◽  
pp. 696-703 ◽  
Author(s):  
M.H. Ding ◽  
B.L. Wang ◽  
L. Li ◽  
Y.F. Zheng
Keyword(s):  
Stainless Steel ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
316L Stainless Steel ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering

scholarly journals Effects in the Optical and Structural Properties Caused by Mg or Zn Doping of GaN Films Grown via Radio-Frequency Magnetron Sputtering Using Laboratory-Prepared Targets

2021 ◽  
Vol 11 (15) ◽  
pp. 6990
Author(s):  
Erick Gastellóu ◽  
Godofredo García ◽  
Ana María Herrera ◽  
Crisoforo Morales ◽  
Rafael García ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Hexagonal Structure ◽  
Binding Energies ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
X Ray ◽  
Diffraction Patterns ◽  
Mg Doped

GaN films doped with Mg or Zn were obtained via radio-frequency magnetron sputtering on silicon substrates at room temperature and used laboratory-prepared targets with Mg-doped or Zn-doped GaN powders. X-ray diffraction patterns showed broadening peaks, which could have been related to the appearance of nano-crystallites with an average of 7 nm. Scanning electron microscopy and transmission electron microscopy showed good adherence to silicon non-native substrate, as well as homogeneity, with a grain size average of 0.14 µm, and 0.16 µm for the GaN films doped with Zn or Mg, respectively. X-ray photo-electron spectroscopy demonstrated the presence of a very small amount of magnesium (2.10 mol%), and zinc (1.15 mol%) with binding energies of 1303.18, and 1024.76 eV, respectively. Photoluminescence spectrum for the Zn-doped GaN films had an emission range from 2.89 to 3.0 eV (429.23–413.50 nm), while Mg-doped GaN films had an energy emission in a blue-violet band with a range from 2.80 to 3.16 eV (443.03–392.56 nm). Raman spectra showed the classical vibration modes A1(TO), E1(TO), and E2(High) for the hexagonal structure of GaN.

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