Effect of post-deposition annealing on structural and electrical properties of high-k HoTiO3 gate dielectrics

2009 ◽  
Vol 256 (5) ◽  
pp. 1534-1537 ◽  
Author(s):  
Tung-Ming Pan ◽  
Li-Chen Yen ◽  
Sheng-Han Su
Keyword(s):  
Electrical Properties ◽  
Gate Dielectrics ◽  
Post Deposition Annealing ◽  
High K ◽  
Structural And Electrical Properties ◽  
Post Deposition

Structural and electrical properties of neodymium oxide high-k gate dielectrics

2006 ◽  
Vol 89 (23) ◽  
pp. 232908 ◽  
Author(s):  
Tung-Ming Pan ◽  
Jian-Der Lee ◽  
Wei-Hao Shu ◽  
Tsung-Te Chen
Keyword(s):  
Electrical Properties ◽  
Gate Dielectrics ◽  
Neodymium Oxide ◽  
High K ◽  
Structural And Electrical Properties

Effect of Al-content and Post Deposition Annealing on the Electrical Properties of Ultra-thin HfAlxOy Layers

2002 ◽  
Vol 745 ◽  
Author(s):  
R. J. Carter ◽  
W. Tsai ◽  
E. Young ◽  
M. Caymax ◽  
J. W. Maes ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Electrical Properties ◽  
Fixed Charge ◽  
Post Deposition Annealing ◽  
Al Content ◽  
Partial Pressures ◽  
High K ◽  
Flatband Voltage ◽  
High Al Content ◽  
Post Deposition

ABSTRACTScaled HfAlxOy/SiO2 stacks down to 1.5 nm EOT have been achieved. Although the addition of Al to the HfO2 matrix can be beneficial, it is observed that the benefit of using a Hf-aluminate is compromised if the film has a high Al-content. This is observed in terms of a dielectric constant close to that of pure Al2O3 (∼ 9) and a large amount of negative fixed charge in the film (∼ 1012 cm-2). Using oxygen post deposition anneals we have been able to reduce flatband voltage shifts associated with fixed charge as well as CV hysteresis. In terms of scaling, the benefit of using a high-k material is compromised if a SiO2 layer is also present in the gate stack. Therefore, it is necessary to perform an O2 PDA at moderate temperatures or in low O2 partial pressures in order to control the thickness of the interfacial oxide layer.

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