Analysis of ITO/Mg:GaN interfaces by synchrotron radiation hard X-ray photoemission spectroscopy and their electrical characteristics

2008 ◽  
Vol 255 (5) ◽  
pp. 2149-2152 ◽  
Author(s):  
Y. Toyoshima ◽  
K. Horiba ◽  
M. Oshima ◽  
J. Ohta ◽  
H. Fujioka ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Photoemission Spectroscopy ◽  
Electrical Characteristics ◽  
X Ray ◽  
Radiation Hard

scholarly journals Determination of Band Structures of InN/GaN Interfaces by Synchrotron Radiation Hard X-ray Photoemission Spectroscopy

2008 ◽  
Vol 6 ◽  
pp. 254-257 ◽  
Author(s):  
Yasushi Toyoshima ◽  
Koji Horiba ◽  
Masaharu Oshima ◽  
Jitsuo Ohta ◽  
Hiroshi Fujioka ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Photoemission Spectroscopy ◽  
Band Structures ◽  
X Ray ◽  
Radiation Hard

Phase objects in synchrotron radiation hard x-ray imaging

1996 ◽  
Vol 29 (1) ◽  
pp. 133-146 ◽  
Author(s):  
Peter Cloetens ◽  
Raymond Barrett ◽  
José Baruchel ◽  
Jean-Pierre Guigay ◽  
Michel Schlenker
Keyword(s):  
Synchrotron Radiation ◽  
X Ray ◽  
X Ray Imaging ◽  
Radiation Hard

Observation of nitrogen species at Al2O3/NO2/H-diamond interfaces by synchrotron radiation x-ray photoemission spectroscopy

2020 ◽  
Vol 128 (13) ◽  
pp. 135702
Author(s):  
Niloy Chandra Saha ◽  
Kazutoshi Takahashi ◽  
Masaki Imamura ◽  
Makoto Kasu
Keyword(s):  
Synchrotron Radiation ◽  
Photoemission Spectroscopy ◽  
Nitrogen Species ◽  
X Ray

A Synchrotron Radiation X-ray Photoemission Spectroscopy Study of n-Propyltriethoxysilane Adsorption on Si(001)-2 × 1 at Room Temperature

2010 ◽  
Vol 114 (49) ◽  
pp. 21450-21456 ◽  
Author(s):  
J.-J. Gallet ◽  
F. Bournel ◽  
D. Pierucci ◽  
M. Bonato ◽  
A. Khaliq ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Room Temperature ◽  
Photoemission Spectroscopy ◽  
Spectroscopy Study ◽  
X Ray

PHOTOEMISSION STUDY OF THE GADOLINIUM/GaAs(100) INTERFACE WITH SYNCHROTRON RADIATION

1997 ◽  
Vol 04 (01) ◽  
pp. 25-31 ◽  
Author(s):  
SHIHONG XU ◽  
FAPEI ZHANG ◽  
ERDONG LU ◽  
XIAOJIANG YU ◽  
FAQIANG XU ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Epitaxial Growth ◽  
Room Temperature ◽  
Interface Structure ◽  
Binding Energies ◽  
Photoemission Spectroscopy ◽  
Interface Formation ◽  
X Ray ◽  
Solution Density ◽  
Photoemission Study

Soft-X-ray photoemission spectroscopy was used to characterize the Gd/GaAs(100)-interface formation at room temperature. At low Gd coverage (<1 Å), the interface is near-abrupt, because no evidence of reaction is observed. With increasing Gd coverage, photoemission signals from chemically reacted product at the interface are observed, causing some intermixing between the overlayer and the substrate. For As atoms, they remain near the interface and have little diffusion. Ga atoms, however, are not kept near the interface, and they can diffuse into the Gd overlayer and segregate onto the surface instead. From the observed variations with metal coverage of binding energies and relative intensities of photoemission signals from the reacted layer, a profile of the interface structure is proposed, and some parameters (decaying length, segregation density and solution density, etc.) have been obtained. The results show that the deposition of Gd onto the GaAs (100) surface induces limited substrate disruption except for some diffusion and segregation of Ga atoms into the metal overlayer. This paper demonstrates that the disruption and epitaxial growth are not mutually exclusive in the Gd / GaAs (100) system.

Development of a scanning tunneling microscope forin situexperiments with a synchrotron radiation hard-X-ray microbeam

2006 ◽  
Vol 13 (2) ◽  
pp. 216-220 ◽  
Author(s):  
Akira Saito ◽  
Junpei Maruyama ◽  
Ken Manabe ◽  
Katsuyuki Kitamoto ◽  
Koji Takahashi ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Scanning Tunneling Microscope ◽  
Scanning Tunneling ◽  
Tunneling Microscope ◽  
X Ray ◽  
Radiation Hard

THE ADSORPTION AND DESORPTION OF OXYGEN ON CdZnTe (111)B-(2 × 2) SURFACE

2013 ◽  
Vol 20 (03n04) ◽  
pp. 1320001
Author(s):  
XUXU BAI ◽  
WANQI JIE ◽  
GANGQIANG ZHA ◽  
WENHUA ZHANG ◽  
JUNFA ZHU ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Photoelectron Spectroscopy ◽  
Oxygen Adsorption ◽  
Photoemission Spectroscopy ◽  
Adsorption And Desorption ◽  
X Ray ◽  
Oxygen Exposure ◽  
Surface Work ◽  
Ultraviolet Photoemission Spectroscopy ◽  
Surface Work Function

The oxygen adsorption and desorption on the CdZnTe (111) B -(2×2) surface were studied with synchrotron radiation ultraviolet photoemission spectroscopy (SRUPS) and X-ray photoelectron spectroscopy (XPS). The results show that a surface state of clean CdZnTe (111) B -(2×2) surface appears at 0.5 eV below Fermi level ( E F), which disappears after the oxygen exposure, and shows again after annealing in UHV. The surface work function of CdZnTe (111) B -(2×2) decreases after the oxygen exposure, and futher reduces after annealing.

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