Low temperature photoluminescence and photoacoustic characterization of Zn-doped InxGa1−xAsySb1−y epitaxial layers for photovoltaic applications

2008 ◽  
Vol 255 (3) ◽  
pp. 761-763 ◽  
Author(s):  
M.L. Gomez-Herrera ◽  
J.L. Herrera-Perez ◽  
P. Rodriguez-Fragoso ◽  
I. Riech ◽  
J.G. Mendoza-Alvarez
Keyword(s):  
Low Temperature ◽  
Epitaxial Layers ◽  
Photovoltaic Applications ◽  
Low Temperature Photoluminescence

Optical Investigation of 3C-SiC Hetero-Epitaxial Layers Grown by Sublimation Epitaxy under Gas Atmosphere

2014 ◽  
Vol 778-780 ◽  
pp. 243-246
Author(s):  
P. Kwasnicki ◽  
V. Jokubavicius ◽  
J.W. Sun ◽  
H. Peyre ◽  
R. Yakimova ◽  
...  
Keyword(s):  
Low Temperature ◽  
Growth Process ◽  
Epitaxial Layers ◽  
Optical Investigation ◽  
Defect Sites ◽  
Vacuum Atmosphere ◽  
Gas Atmosphere ◽  
Low Temperature Photoluminescence

We investigated three 3C-SiC samples grown on 6H SiC substrate by sublimation epitaxy under gas atmosphere. We focus on the low temperature photoluminescence and Raman measurements to show that compare to a growth process under vacuum atmosphere, the gas atmosphere favor the incorporation of impurities at already existing and/or newly created defect sites.

Structural Characterization of MBE Grown (001) CdTe Films by Means of Transmission Electron Microscopy, Low Temperature Photoluminescence and Double Crystal Rocking Curves.

1986 ◽  
Vol 77 ◽  
Author(s):  
M. G. Burke ◽  
W. J. Choyke ◽  
N. J. Doyle ◽  
Z. C. Feng ◽  
M. H. Hanes ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ion Milling ◽  
Double Crystal ◽  
X Ray ◽  
Transmission Electron ◽  
Line Defects ◽  
Cdte Films ◽  
Means Of Transmission ◽  
Low Temperature Photoluminescence

ABSTRACTThe effects of chemical etching, mechanical thinning, and ion milling on the low temperature photoluminescence spectra of MBE grown (001) CdTe films are reported. Line defects observed by TEM are correlated with photoluminescence. It is shown that X-ray D.C.R.C, measurements in these films are weighted averages over the whole thickness of the films and therefore weakly reflect the structural perfection of the samples near the surface as deduced by photoluminescence.

Preparation and Characterization of TeO2 Based Glasses

2005 ◽  
Vol 480-481 ◽  
pp. 315-322 ◽  
Author(s):  
J. Pedlíková ◽  
J. Zavadil ◽  
Olga Prochazková ◽  
J. Kaluzny
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Low Temperature ◽  
Absorption Edge ◽  
Electronic Transitions ◽  
Transmission Range ◽  
Dc Electrical Conductivity ◽  
Pacs Codes ◽  
Low Temperature Photoluminescence

Binary and ternary TeO2 based oxy-chloride glass systems have been prepared and characterised by absorption and low-temperature photoluminescence spectroscopy, and by the measurements of dc electrical conductivity. Prepared glasses exhibit transmittance 75-80% in a broad transmission range 0.3 – 6.5µm with modest shift of upper absorption edge to longer wavelength as heavier ions are introduced into the system. Electronic transitions between 4f-4f inner shells of Pr3+ ions embedded into the host glass have been investigated in a wide temperature range as a function of used precursors used for doping. The temperature dependence of dc electrical conductivity exhibits Arrhenius plots with the single activation energy. PACS codes 81.05.Kf, 78.20.Ci, 78.55.Hx

Influence of n-Type Doping Levels on Carrier Lifetime in 4H-SiC Epitaxial Layers

2017 ◽  
Vol 897 ◽  
pp. 238-241 ◽  
Author(s):  
Louise Lilja ◽  
Ildiko Farkas ◽  
Ian Booker ◽  
Jawad ul Hassan ◽  
Erik Janzén ◽  
...  
Keyword(s):  
Low Temperature ◽  
Deep Level Transient Spectroscopy ◽  
Doping Level ◽  
Carrier Lifetime ◽  
Deep Level ◽  
Growth Conditions ◽  
Epitaxial Layers ◽  
Drastic Decrease ◽  
Transient Spectroscopy ◽  
Low Temperature Photoluminescence

In this study we have grown thick 4H-SiC epitaxial layers with different n-type doping levels in the range 1E15 cm-3 to mid 1E18 cm-3, in order to investigate the influence on carrier lifetime. The epilayers were grown with identical growth conditions except the doping level on comparable substrates, in order to minimize the influence of other parameters than the n-type doping level. We have found a drastic decrease in carrier lifetime with increasing n-type doping level. Epilayers were further characterized with low temperature photoluminescence and deep level transient spectroscopy.

Low-temperature photoluminescence characterization of hydrogen- and helium-implanted silicon

2001 ◽  
Vol 4 (1-3) ◽  
pp. 297-299 ◽  
Author(s):  
A.G. Ulyashin ◽  
R. Job ◽  
W.R. Fahrner ◽  
A.V. Mudryi ◽  
A.I. Patuk ◽  
...  
Keyword(s):  
Low Temperature ◽  
Low Temperature Photoluminescence

Spectroscopic Characterization of Ion-Implanted GaN

2002 ◽  
Vol 743 ◽  
Author(s):  
L. Chen ◽  
B. J. Skromme
Keyword(s):  
Low Temperature ◽  
High Purity ◽  
Spectroscopic Characterization ◽  
Acceptor Pair ◽  
Donor Acceptor ◽  
Optical Activation ◽  
Donor Acceptor Pair ◽  
Low Temperature Photoluminescence ◽  
Do So

ABSTRACTWe investigate implantation of high purity HVPE GaN with Mg, Be, C, Zn, Cd, Ca, N, O, P, As, Ne, and Ar. After annealing at 1300 °C, the material is characterized using low temperature photoluminescence (PL). The Mg acceptors exhibit much better optical activation than Be, C, Zn, Cd, or Ca acceptors implanted and annealed under the same conditions. Acceptor-bound exciton peaks and well-resolved donor-acceptor pair bands are observed for both Mg and Zn. A broad peak centered near 2.78 eV is obtained for Cd, confirming that it is deeper than Zn. Isoelectronic As or P exhibit sharp no-phonon bound exciton lines at 2.952 and 3.200 eV, respectively. Defect-related bands centered at 2.2 and 2.35 eV are studied. Both Be and C strongly enhance the yellow (2.2 eV) PL band, but no other impurities do so, including O.

Vapor-Liquid-Solid Growth of Cadmium Telluride Nanowires by Close-Space-Sublimation for Photovoltaic Applications

2011 ◽  
Vol 1350 ◽  
Author(s):  
B. L. Williams ◽  
B. Mendis ◽  
L. Bowen ◽  
D. P. Halliday ◽  
K. Durose
Keyword(s):  
Low Temperature ◽  
Cdte Film ◽  
Vapor Liquid Solid ◽  
Close Space Sublimation ◽  
Photovoltaic Applications ◽  
Temperature Time ◽  
Space Sublimation ◽  
Vapor Liquid Solid Growth ◽  
Low Temperature Photoluminescence ◽  
Vapor Liquid

ABSTRACTArrays of CdTe nanowires have been grown on conductive, flexible Mo substrates by the vapor-liquid-solid technique. A method of forming the arrays on a largely continuous CdTe film is described. For producing nanowire solar cells, this structure provides the advantage of preventing shunts. Nanowires having diameters in the range 100-500 nm and lengths up to 100 μm were generated. The influence of growth temperature, time and pressure on the morphology of deposited layers was investigated, and a mechanism for the generation of layer/nanowire combinations is postulated. Characterization by SEM, TEM and low temperature photoluminescence is presented.

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