Effects of annealing temperature on the crystal structure and properties of electroless deposited Ni–W–Cr–P alloy coatings

2008 ◽  
Vol 255 (5) ◽  
pp. 1686-1691 ◽  
Author(s):  
Ling Zhang ◽  
Yong Jin ◽  
Bo Peng ◽  
Yifan Zhang ◽  
Xuejuan Wang ◽  
...  
Author(s):  
F.-R. Chen ◽  
T. L. Lee ◽  
L. J. Chen

YSi2-x thin films were grown by depositing the yttrium metal thin films on (111)Si substrate followed by a rapid thermal annealing (RTA) at 450 to 1100°C. The x value of the YSi2-x films ranges from 0 to 0.3. The (0001) plane of the YSi2-x films have an ideal zero lattice mismatch relative to (111)Si surface lattice. The YSi2 has the hexagonal AlB2 crystal structure. The orientation relationship with Si was determined from the diffraction pattern shown in figure 1(a) to be and . The diffraction pattern in figure 1(a) was taken from a specimen annealed at 500°C for 15 second. As the annealing temperature was increased to 600°C, superlattice diffraction spots appear at position as seen in figure 1(b) which may be due to vacancy ordering in the YSi2-x films. The ordered vacancies in YSi2-x form a mesh in Si plane suggested by a LEED experiment.


1972 ◽  
Vol 33 (C2) ◽  
pp. C2-241-C2-242
Author(s):  
Yu. N. VENEVTSEV ◽  
A. G. KAPYSHEV ◽  
V. M. LEBEDEV ◽  
V. D. SAL'NIKOV ◽  
G. S. ZHDANOV

2005 ◽  
Vol 40 (5) ◽  
pp. 800-809 ◽  
Author(s):  
Alexander A. Tsirlin ◽  
Victoria V. Chernaya ◽  
Roman V. Shpanchenko ◽  
Evgeny V. Antipov ◽  
Joke Hadermann

Author(s):  
Zhirong Luo ◽  
Xianhong Yin ◽  
Qiaolan Wu ◽  
Jichang Zhuang ◽  
Dandan Zhao ◽  
...  

2012 ◽  
Vol 41 (8) ◽  
pp. 812-813 ◽  
Author(s):  
Hongping Wu ◽  
Shilie Pan ◽  
Dianzeng Jia ◽  
Zhaohui Chen ◽  
Hongwei Yu

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