Annealing effects on electrical and optical properties of ZnO films deposited on GaAs by metal organic chemical vapor deposition

2008 ◽  
Vol 254 (22) ◽  
pp. 7482-7485 ◽  
Author(s):  
Jingchang Sun ◽  
Hongwei Liang ◽  
Jianze Zhao ◽  
Qiuju Feng ◽  
Jiming Bian ◽  
...  
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Zno Films ◽  
Electrical And Optical Properties ◽  
Annealing Effects ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Structural, Electrical and Optical Properties of Ternary Al2xIn2(1-x)O3 Films Prepared by Metal Organic Chemical Vapor Deposition

2017 ◽  
Vol 898 ◽  
pp. 1796-1803
Author(s):  
Xue Jian Du ◽  
Xian Jin Feng ◽  
Wei Guang Wang ◽  
Cai Na Luan ◽  
Jin Ma
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Electrical And Optical Properties ◽  
Al Content ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

New wide band gap semiconductors with tunable properties are desperately needed to meet the ever-increasing demands of photoelectric devices operating in the ultraviolet (UV) or even deep ultraviolet (DUV) region. In this study, the ternary aluminum indium oxide (Al2xIn2(1-x)O3) films with different Al compositions of x [Al/(Al+In) atomic ratio] were successfully grown on the α-Al2O3 (0001) substrates at 650 °C by metal organic chemical vapor deposition (MOCVD). The influence of Al content on the structural, compositional, electrical and optical properties of the obtained films was investigated in detail. The structural transition from polycrystalline structure of bixbyite In2O3 to amorphous was observed as the Al content increased. The lowest resistivity of 1.52×10-3 Ω·cm was obtained for the sample with x=0.2, along with the respective hall mobility and carrier concentration values of 12.87 cm2V-1s-1 and 2.27×1020 cm-3. The average visible transmittances of over 83% were demonstrated for all the samples. The calculated values of optical band gap for the films indicated continuous increase from 3.82 to 5.88 eV as the x value increased from 0.1 to 0.9. The Al2xIn2(1-x)O3 films with tunable properties may be potentially employed in the fabrication of transparent optoelectronic devices, such as UV detectors, transparent TFTs and short wavelength light-emitting devices.

Optical Properties of Novel GaN 3D Structures Grown by Metal-Organic Chemical Vapor Deposition (MOCVD)

2004 ◽  
Vol 43 (No. 6A) ◽  
pp. L698-L701 ◽  
Author(s):  
Marco Sacilotti ◽  
Luc Imhoff ◽  
Colette Dumas ◽  
Pierre Viste ◽  
Jean-Claude Vial ◽  
...  
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
3D Structures ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition
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