Status of the pulsed low energy positron beam system (PLEPS) at the Munich Research Reactor FRM-II

2008 ◽  
Vol 255 (1) ◽  
pp. 35-38 ◽  
Author(s):  
P. Sperr ◽  
W. Egger ◽  
G. Kögel ◽  
G. Dollinger ◽  
C. Hugenschmidt ◽  
...  
Keyword(s):  
Research Reactor ◽  
Positron Beam ◽  
Low Energy ◽  
Beam System

scholarly journals Low energy positron beam system for the investigation of 2D and porous materials

2017 ◽  
Vol 791 ◽  
pp. 012008
Author(s):  
M D Chrysler ◽  
V A Chirayath ◽  
A D Mcdonald ◽  
R W Gladen ◽  
A J Fairchild ◽  
...  
Keyword(s):  
Porous Materials ◽  
Positron Beam ◽  
Low Energy ◽  
Beam System

Low energy positron beam studies of nano-TiN films

1994 ◽  
Vol 26 (2-3) ◽  
pp. 163-166 ◽  
Author(s):  
Huimin Weng ◽  
Dazhi Wang ◽  
Rongdian Han ◽  
Yi Jiang ◽  
Genqing Yang ◽  
...  
Keyword(s):  
Positron Beam ◽  
Low Energy ◽  
Tin Films

Investigation of surface defects on Ni(110) with a low-energy positron beam

1987 ◽  
Vol 35 (3) ◽  
pp. 1034-1038 ◽  
Author(s):  
A. R. Köymen ◽  
D. W. Gidley ◽  
T. W. Capehart
Keyword(s):  
Surface Defects ◽  
Positron Beam ◽  
Low Energy

Defect Formation by Ion Implantation in Cz-Si Studied by a Monoenergetic Positron Beam

1992 ◽  
Vol 262 ◽  
Author(s):  
A. Uedono ◽  
Y. Ujihira ◽  
L. Wei ◽  
Y. Tabuki ◽  
S. Tanigawa ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Ion Implantation ◽  
Defect Formation ◽  
Positron Beam ◽  
Low Energy ◽  
Doppler Broadening ◽  
Positron Energy ◽  
Annealing Experiments ◽  
Incident Positron ◽  
Ion Implanted

ABSTRACTVacancy-type defects in ion implanted Si were studied by a monoenergetic positron beam. The depth-distributions of the defects were obtained from measurements of Doppler broadening profiles of the positron annihilation as a function of incident positron energy. The results showed that a size of vacany-clusters introduced by 150-keV P+-ion implantation was found to be smaller than that introduced by 2-MeV P+-ion implantation. This was attributed to an overlap of collision cascades in low-energy (150 keV) ion implanted specimens. From isochronal annealing experiments for 80-keV B+- and 150-keV P+-ion implanted specimens, the defected region was removed by 1200 °C annealing, however, for 2-MeV P+-implanted specimen, two-types of oxygen-vacancy complexes were found to coexist even after 1200 °C annealing.

scholarly journals Modelling the line shape of very low energy peaks of positron beam induced secondary electrons measured using a time of flight spectrometer

2017 ◽  
Vol 791 ◽  
pp. 012030 ◽  
Author(s):  
A J Fairchild ◽  
V A Chirayath ◽  
R W Gladen ◽  
M D Chrysler ◽  
A R Koymen ◽  
...  
Keyword(s):  
Line Shape ◽  
Time Of Flight ◽  
Positron Beam ◽  
Low Energy ◽  
Secondary Electrons

Pulsed low energy positron system (PLEPS) at the Munich research reactor FRM II

2007 ◽  
Vol 4 (10) ◽  
pp. 3969-3972 ◽  
Author(s):  
W. Egger ◽  
P. Sperr ◽  
G. Kögel ◽  
G. Dollinger
Keyword(s):  
Research Reactor ◽  
Low Energy

scholarly journals In-situ Low Energy Argon Ion Milling of Nanoelectronic Structures Using a Triple Beam System

2009 ◽  
Vol 15 (S2) ◽  
pp. 170-171 ◽  
Author(s):  
H Stegmann ◽  
Y Ritz ◽  
D Utess ◽  
H-J Engelmann ◽  
E Zschech
Keyword(s):  
Low Energy ◽  
Ion Milling ◽  
Beam System ◽  
Argon Ion

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009

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