High temperature annealing effect on structure, optical property and laser-induced damage threshold of Ta2O5 films

2008 ◽  
Vol 254 (20) ◽  
pp. 6554-6559 ◽  
Author(s):  
Cheng Xu ◽  
Qiling Xiao ◽  
Jianyong Ma ◽  
Yunxia Jin ◽  
Jianda Shao ◽  
...  
Keyword(s):  
High Temperature ◽  
Optical Property ◽  
Damage Threshold ◽  
Annealing Effect ◽  
High Temperature Annealing ◽  
Laser Induced Damage

High-Temperature Annealing Effect of Si in Group-V Ambient Prior to Heteroepitaxy of InAs in Metal–Organic Vapor Phase Epitaxy

2011 ◽  
Vol 50 (4S) ◽  
pp. 04DH07 ◽  
Author(s):  
Momoko Deura ◽  
Yoshiyuki Kondo ◽  
Mitsuru Takenaka ◽  
Shinichi Takagi ◽  
Yukihiro Shimogaki ◽  
...  
Keyword(s):  
High Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Annealing Effect ◽  
High Temperature Annealing ◽  
Group V ◽  
Organic Vapor ◽  
Metal Organic

High-Temperature Annealing Effect of Si in Group-V Ambient Prior to Heteroepitaxy of InAs in Metal–Organic Vapor Phase Epitaxy

2011 ◽  
Vol 50 (4) ◽  
pp. 04DH07 ◽  
Author(s):  
Momoko Deura ◽  
Yoshiyuki Kondo ◽  
Mitsuru Takenaka ◽  
Shinichi Takagi ◽  
Yukihiro Shimogaki ◽  
...  
Keyword(s):  
High Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Annealing Effect ◽  
High Temperature Annealing ◽  
Group V ◽  
Organic Vapor ◽  
Metal Organic

scholarly journals Preparation of sol-gel ZrO2 films with high laser-induced damage threshold under high temperature

2019 ◽  
Vol 27 (26) ◽  
pp. 37568 ◽  
Author(s):  
Yongqiao Zhu ◽  
Ming Ma ◽  
Pu Zhang ◽  
Wenzhe Cai ◽  
Dawei Li ◽  
...  
Keyword(s):  
High Temperature ◽  
Sol Gel ◽  
Damage Threshold ◽  
High Laser ◽  
Laser Induced Damage

La6Cd0.75Ga2Q11.5Cl2.5 (Q = S and Se): Two New Nonlinear Optical Chalcohalides with Large Laser-Induced Damage Threshold (LIDT)

CrystEngComm ◽  
2021 ◽  
Author(s):  
Feng Lin ◽  
Mengjia Luo ◽  
Ruiqi Wang ◽  
Xiangli Che ◽  
Fu Qiang Huang
Keyword(s):  
High Temperature ◽  
Functional Groups ◽  
Nonlinear Optical ◽  
Damage Threshold ◽  
Temperature Reaction ◽  
High Temperature Reaction ◽  
Reaction Flux ◽  
Laser Induced Damage

Two new chalcohalides La6Cd0.75Ga2Q11.5Cl2.5 (Q = S and Se) with mixed-anionic functional groups were synthesized by high temperature reaction using LaCl3 as reaction-flux. Both compounds crystalize in the non-centrosymmetric space...

Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing

1989 ◽  
Vol 47 ◽  
pp. 604-605
Author(s):  
P. Roitman ◽  
B. Cordts ◽  
S. Visitserngtrakul ◽  
S.J. Krause
Keyword(s):  
High Temperature ◽  
Annealing Temperature ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Temperature Annealing ◽  
High Current ◽  
Defect Reduction ◽  
Annealing Step ◽  
Multiple Cycle ◽  
Defect Densities

Synthesis of a thin, buried dielectric layer to form a silicon-on-insulator (SOI) material by high dose oxygen implantation (SIMOX – Separation by IMplanted Oxygen) is becoming an important technology due to the advent of high current (200 mA) oxygen implanters. Recently, reductions in defect densities from 109 cm−2 down to 107 cm−2 or less have been reported. They were achieved with a final high temperature annealing step (1300°C – 1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. However, the processes and conditions for reduction and elimination of precipitates and defects during high temperature annealing are not well understood. In this work we have studied the effect of annealing temperature on defect and precipitate reduction for SIMOX samples which were processed first with high temperature, high current implantation followed by high temperature annealing.

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