Characterization of soft-X-ray detectors fabricated with high-quality CVD diamond thin films

2008 ◽  
Vol 254 (19) ◽  
pp. 6277-6280 ◽  
Author(s):  
Y. Iwakaji ◽  
M. Kanasugi ◽  
O. Maida ◽  
Y. Takeda ◽  
Y. Saitoh ◽  
...  
Keyword(s):  
Thin Films ◽  
Cvd Diamond ◽  
High Quality ◽  
X Ray ◽  
Diamond Thin Films

scholarly journals Thermal Characterization of Polycrystalline CVD Diamond Thin Films

2009 ◽  
Vol 1 (1) ◽  
pp. 609-613 ◽  
Author(s):  
S. Lani ◽  
C. Ataman ◽  
W. Noell ◽  
D. Briand ◽  
N. de Rooij
Keyword(s):  
Thin Films ◽  
Thermal Characterization ◽  
Cvd Diamond ◽  
Diamond Thin Films

Growth of (100) oriented diamond thin films on ball structure diamond-like particles

1992 ◽  
Vol 7 (7) ◽  
pp. 1606-1609 ◽  
Author(s):  
Lee Chow ◽  
Alan Horner ◽  
Hooman Sakouri ◽  
Bahram Roughani ◽  
Swaminatha Sundaram
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Diamond Films ◽  
Cvd Diamond ◽  
X Ray ◽  
Oriented Films ◽  
Diamond Thin Films

The morphology of typical CVD diamond thin films has been shown to be controlled by the concentration of methane during deposition. For example, for CH4 concentrations c < 0.4% the (111) faces dominate, while at 0.4% < c < 1.2% (100) faces dominate. Here we showed that the (100) oriented diamond films can be grown on top of the microcrystalline ball-like particles under suitable conditions. These (100) oriented diamond films are grown under the condition of 1.5% methane in hydrogen, substrate temperature of 680 °C–750 °C, and pressure of 30–80 Torr. The bombardment of the diamond thin films by ions in the plasma is believed to be an important factor for the formation of (100) oriented films on top of the ball-like particles. SEM, Raman, and x-ray techniques were used to characterize the deposited (100) oriented diamond thin films.

Sub gap optical absorption characterization of CVD diamond thin films

1999 ◽  
Author(s):  
U. Zammit ◽  
K. N. Madhusoodanan ◽  
S. Foglietta ◽  
M. Marinelli ◽  
F. Mercuri ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Absorption ◽  
Cvd Diamond ◽  
Diamond Thin Films

Dielectric characterization of CVD diamond thin films

2002 ◽  
Author(s):  
M. Hernandez-Velez ◽  
O. Sanchez-Garrido ◽  
F. Fernandez-Gutierrez ◽  
J. Sanchez-Olias ◽  
J.M. Albella-Martin
Keyword(s):  
Thin Films ◽  
Cvd Diamond ◽  
Dielectric Characterization ◽  
Diamond Thin Films

Electron microscopic characterization of diamond thin films and substrates for diamond heteroepitaxial growth

1989 ◽  
Vol 47 ◽  
pp. 592-593
Author(s):  
J.B. Posthill ◽  
R.P. Burns ◽  
R.A. Rudder ◽  
Y.H. Lee ◽  
R.J. Markunas ◽  
...  
Keyword(s):  
Thin Films ◽  
Wide Band ◽  
Deposition Process ◽  
Heteroepitaxial Growth ◽  
Electron Microscopic ◽  
Wide Band Gap ◽  
Lattice Matching ◽  
Different Types ◽  
Diamond Thin Films

Because of diamond’s wide band gap, high thermal conductivity, high breakdown voltage and high radiation resistance, there is a growing interest in developing diamond-based devices for several new and demanding electronic applications. In developing this technology, there are several new challenges to be overcome. Much of our effort has been directed at developing a diamond deposition process that will permit controlled, epitaxial growth. Also, because of cost and size considerations, it is mandatory that a non-native substrate be developed for heteroepitaxial nucleation and growth of diamond thin films. To this end, we are currently investigating the use of Ni single crystals on which different types of epitaxial metals are grown by molecular beam epitaxy (MBE) for lattice matching to diamond as well as surface chemistry modification. This contribution reports briefly on our microscopic observations that are integral to these endeavors.

The Growth and Characterization of Germanium-Carbon Alloy Thin Films

1992 ◽  
Vol 270 ◽  
Author(s):  
Haojie Yuan ◽  
R. Stanley Williams
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Vacuum Chamber ◽  
Optical Band Gap ◽  
High Vacuum ◽  
Optical Absorption Spectroscopy ◽  
Alloy Thin Film ◽  
New Materials ◽  
X Ray

ABSTRACTThin films of pure germanium-carbon alloys (GexC1−x with x ≈ 0.0, 0.2, 0.4, 0.5, 0.6, 0.8, 1.0) have been grown on Si(100) and A12O3 (0001) substrates by pulsed laser ablation in a high vacuum chamber. The films were analyzed by x-ray θ-2θ diffraction (XRD), x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), conductivity measurements and optical absorption spectroscopy. The analyses of these new materials showed that films of all compositions were amorphous, free of contamination and uniform in composition. By changing the film composition, the optical band gap of these semiconducting films was varied from 0.00eV to 0.85eV for x = 0.0 to 1.0 respectively. According to the AES results, the carbon atoms in the Ge-C alloy thin film samples has a bonding configuration that is a mixture of sp2 and sp3 hybridizations.

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