Structure and electrical properties of CdIn2O4 thin films prepared by DC reactive magnetron sputtering

2008 ◽  
Vol 254 (17) ◽  
pp. 5481-5486 ◽  
Author(s):  
F.F. Yang ◽  
L. Fang ◽  
S.F. Zhang ◽  
J.S. Sun ◽  
Q.T. Xu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Dc Reactive Magnetron Sputtering

MICROSTRUCTURE AND ELECTRICAL PROPERTIES OF Al/TaNx MULTILAYERS

2010 ◽  
Vol 03 (02) ◽  
pp. 131-133 ◽  
Author(s):  
HONGCHUAN JIANG ◽  
CHAOJIE WANG ◽  
WANLI ZHANG ◽  
XU SI
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Temperature Coefficient ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Temperature Coefficient Of Resistance ◽  
Dc Reactive Magnetron Sputtering

Al/TaN x multilayers were deposited on Al 2 O 3 wafers by DC reactive magnetron sputtering. Microstructure and electrical properties of the samples were investigated in detail. The results show that more compact and smoother surfaces than that of TaN x thin films can be obtained in the Al/TaN x multilayers. Metal Al phases precipitate out from all the Al/TaN x multilayer samples. The main phases in the Al/TaN x multilayers are poor nitrogen phases when sputtered at lower nitrogen partial flux. However, rich nitrogen phases gradually precipitate out from the samples at higher nitrogen partial flux. With the increase of the nitrogen partial flux from 2 to 6%, the resistivity of the Al/TaN x multilayers increases from 640 to 1170 μΩ · cm, and the temperature coefficient of resistance (TCR) of the samples increases from 46 to 350 ppm/°C. Compared with TaN x thin films, the resistivity and TCR of the Al/TaN x multilayers are all higher than those of the TaN x thin films.

Room temperature deposition of crystalline HfN thin films by DC reactive magnetron sputtering

2021 ◽  
Author(s):  
Wuttichai Phae-ngam ◽  
Tossaporn Lertvanithphol ◽  
Chanunthorn Chananonnawathorn ◽  
Rattanachai Kowong ◽  
Mati Horprathum ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Dc Reactive Magnetron Sputtering ◽  
Temperature Deposition

Growth and characterization of NiO thin films prepared by dc reactive magnetron sputtering

2011 ◽  
Vol 13 (2) ◽  
pp. 314-320 ◽  
Author(s):  
A. Mallikarjuna Reddy ◽  
A. Sivasankar Reddy ◽  
Kee-Sun Lee ◽  
P. Sreedhara Reddy
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Dc Reactive Magnetron Sputtering
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