Study of surface treatment processes for improvement in the wettability of silicon-based materials used in high aspect ratio through-via copper electroplating

2007 ◽  
Vol 253 (21) ◽  
pp. 8637-8646 ◽  
Author(s):  
Pradeep Dixit ◽  
Xiaofeng Chen ◽  
Jianmin Miao ◽  
Sheeja Divakaran ◽  
Robert Preisser
2021 ◽  
Author(s):  
Amin Sandoughsaz Zardini ◽  
Behnoush Rostami ◽  
Khalil Najafi ◽  
Vaughn L. Hetrick ◽  
Omar J. Ahmed

AbstractIn this work, we propose a new silicon-based micro-fabrication technology to fabricate 3D high-density high-electrode-count neural micro-probe arrays scalable to thousands and even millions of individual electrodes with user-defined length, width, shape, and tip profile. This unique technology utilizes DRIE of ultra-high aspect-ratio holes in silicon and refilling them with multiple films to form thousands of individual needles with metal tips making up the “sea-of-electrodes” array (SEA). World-record density of 400 electrodes/mm2 in a 5184-needle array is achieved. The needles are ~0.5-1.2mm long, <20μm wide at the base, and <1μm at the tip. The silicon-based structure of these 3D array probes with sharp tips, makes them stiff enough and easily implantable in the brain to reach a targeted region without failing. Moreover, the high aspect ratio of these extremely fine needles reduces the tissue damage and improves the chronic stability. Functionality of the electrodes is investigated using acute in vivo recording in a rat barrel field cortex under isoflurane anesthesia.


1989 ◽  
Vol 28 (Part 1, No. 3) ◽  
pp. 549-552
Author(s):  
Masayuki Endo ◽  
Masaru Sasago ◽  
Kouji Matsuoka ◽  
Noboru Nomura

2019 ◽  
Vol 205 ◽  
pp. 20-25 ◽  
Author(s):  
Sebastian Killge ◽  
Irene Bartusseck ◽  
Marcel Junige ◽  
Volker Neumann ◽  
Johanna Reif ◽  
...  

1998 ◽  
Vol 514 ◽  
Author(s):  
V. M. Dubin ◽  
S. Lopatin ◽  
S. Chen ◽  
R. Cheung ◽  
C. Ryu ◽  
...  

ABSTRACTCopper was electroplated on sputtered Cu seed layer with Ta diffusion barrier. We achieved enhanced Cu deposition at the bottom of trenches/vias and defect-free filling sub-0.5 μm trenches (down to 0.25 μm width) of high aspect ratio (up to 4:1). Large grains occupying the entire trench were observed. Bottom step coverage of electroplated copper in sub-0.5 μm trenches was estimated to be about 140%, while sidewalls step coverage was about 120%. Via resistance for sub-0.5 μm vias was measured to be below 0.55 Ω. Strong <111> texture, large grains, and low tensile stress were observed in electroplated Cu films and in-laid Cu lines after low temperature anneal.


2008 ◽  
Vol 516 (16) ◽  
pp. 5194-5200 ◽  
Author(s):  
Pradeep Dixit ◽  
Xiaofeng Chen ◽  
Jianmin Miao ◽  
Robert Preisser

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