Synthesis of TiN thin films by a new combined laser/sol–gel processing technique

2007 ◽  
Vol 253 (19) ◽  
pp. 7903-7907 ◽  
Author(s):  
Tamer Ezz ◽  
Philip Crouse ◽  
Lin Li ◽  
Zhu Liu
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Processing Technique ◽  
Tin Thin Films ◽  
Gel Processing

The optimization of electric properties of multilayered BNT–BT–ST/BCST thin films by configuration

RSC Advances ◽  
2015 ◽  
Vol 5 (8) ◽  
pp. 6181-6185 ◽  
Author(s):  
Wei Li ◽  
Peng Li ◽  
Huarong Zeng ◽  
Jigong Hao ◽  
Jiwei Zhai
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Processing Technique ◽  
Electric Properties ◽  
Multilayered Thin Films ◽  
Gel Processing

The 0.755Bi0.5Na0.5TiO3–0.065BaTiO3–0.18SrTiO3/Ba0.98Ca0.02Ti0.96Sn0.04O3 (BNT–BT–ST/BCST) multilayered thin films, consisting of BNT–BT–ST layers and BCST layers, were prepared by using the sol–gel processing technique.

scholarly journals Microstructure and electric properties of BCZT thin films with seed layers

RSC Advances ◽  
2017 ◽  
Vol 7 (79) ◽  
pp. 49962-49968 ◽  
Author(s):  
Xin Jiang ◽  
Dan Wang ◽  
Mingze Sun ◽  
Ningjing Zheng ◽  
Shengwei Jia ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Processing Technique ◽  
Electric Properties ◽  
Lead Free ◽  
Gel Processing ◽  
Seed Layers

Lead free Ba0.99Ca0.01Ti0.98Zr0.02O3 (BCZT) thin films with seed layers were prepared by using sol–gel processing technique.

Structure and electrical properties of CuAlO2 thin films derived by sol–gel processing

2010 ◽  
Vol 22 (6) ◽  
pp. 666-671 ◽  
Author(s):  
Si-Jia Liu ◽  
Hua Wang ◽  
Ji-Wen Xu ◽  
Ming-Fang Ren ◽  
Ling Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Sol Gel ◽  
Gel Processing

Phase transition and piezoelectricity of sol–gel-processed Sm-doped BiFeO3 thin films on Pt(111)/Ti/SiO2/Si substrates

2015 ◽  
Vol 3 (9) ◽  
pp. 2115-2122 ◽  
Author(s):  
Wei Sun ◽  
Jing-Feng Li ◽  
Qi Yu ◽  
Li-Qian Cheng
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Sol Gel ◽  
Orthorhombic Phase ◽  
High Quality ◽  
Si Substrates ◽  
Bifeo3 Thin Films ◽  
Gel Processing

We prepared high-quality Bi1−xSmxFeO3 films on Pt(111)/Ti/SiO2/Si substrates by sol–gel processing and found rhombohedral–orthorhombic phase transition with enhanced piezoelectricity.

Submicrometric gratings fabrication from photosensitive organo-silica-hafnia thin films elaborated by sol–gel processing

2012 ◽  
Vol 520 (19) ◽  
pp. 6050-6056 ◽  
Author(s):  
Janyce Franc ◽  
Vincent Barnier ◽  
Francis Vocanson ◽  
Emilie Gamet ◽  
Maryline Lesage ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Gel Processing

Solution-sol-gel processing of lead magnesium niobate thin films

1990 ◽  
Vol 12 (2) ◽  
pp. 29-34 ◽  
Author(s):  
P. Ravindranathan ◽  
S. Komarneni ◽  
A. S. Bhalla ◽  
L. E. Cross ◽  
R. Roy
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Lead Magnesium Niobate ◽  
Magnesium Niobate ◽  
Lead Magnesium ◽  
Gel Processing

The preparation of PbTiO3 thin films by sol-gel processing

1993 ◽  
Vol 35 (3) ◽  
pp. 259-263 ◽  
Author(s):  
Liu Meidong ◽  
Wang Peiying ◽  
Wu Guoan ◽  
Rao Yunhua
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Gel Processing

Synthesis and Ferroelectric Properties of Sol–Gel Derived Intergrowth-Superlattice-Structured SrBi4Ti4O15-Bi4Ti3O12 Thin Films

2011 ◽  
Vol 197-198 ◽  
pp. 1781-1784
Author(s):  
Hua Wang ◽  
Jian Li ◽  
Ji Wen Xu ◽  
Ling Yang ◽  
Shang Ju Zhou
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Annealing Temperature ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Si Substrates ◽  
Gel Processing ◽  
Coercive Electric Field ◽  
Clockwise Hysteresis

Intergrowth-superlattice-structured SrBi4Ti4O15–Bi4Ti3O12(SBT–BIT) films prepared on p-Si substrates by sol-gel processing. Synthesized SBT–BIT films exhibit good ferroelectric properties. As the annealing temperature increases from 600°C to 700°C, the remanent polarization Prof SBT–BIT films increases, while the coercive electric field Ecdecreases. SBT–BIT films annealed at 700°C have a Prvalue of 18.9µC/cm2which is higher than that of SBT (16.8µC/cm2) and BIT (14.6µC/cm2), and have the lowest Ecof 142 kV/cm which is almost the same as that of SBT and BIT. The C-V curves of Ag/SBT-BIT/p-Si heterostructures show the clockwise hysteresis loops which reveal the memory effect due to the polarization. The memory window in C-V curve of Ag/SBT-BIT/p-Si is larger than that of Ag/SBT/p-Si heterostructure or Ag/BIT/p-Si heterostructure.

Sol-gel processing of oriented SrTiO3 thin films

1995 ◽  
Vol 23 (1-3) ◽  
pp. 123-127 ◽  
Author(s):  
Ulagaraj Selvaraj ◽  
Alamanda V. Prasadarao ◽  
Sridhar Komarneni ◽  
Rustum Roy
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Gel Processing
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