Indirect laser etching of fused silica: Towards high etching rate processing

2007 ◽  
Vol 253 (19) ◽  
pp. 8091-8096 ◽  
Author(s):  
R. Böhme ◽  
K. Zimmer
Keyword(s):  
Etching Rate ◽  
Fused Silica ◽  
Laser Etching ◽  
High Etching Rate

Make Carbon nanotube-polymer composite thin: application to water quality

2011 ◽  
Vol 1346 ◽  
Author(s):  
C. Villeneuve ◽  
S. Pacchini ◽  
M. Dilhan ◽  
D. Colin ◽  
A. Brouzes ◽  
...  
Keyword(s):  
Composite Film ◽  
Plasma Treatment ◽  
Inner Core ◽  
Etching Rate ◽  
Water Molecules ◽  
Technology Process ◽  
Aligned Carbon Nanotubes ◽  
Internal Radius ◽  
High Etching Rate ◽  
Membrane Roughness

ABSTRACTThis paper reviews our works about the development of thin composite film based on aligned carbon nanotubes (CNT) forest, embedded in epoxy or PMMA polymer matrix, in order to fabricate membranes dedicated to water purification issue. Indeed, the small internal radius of nanotubes, the smoothness of their inner core and the hydrophobic properties of its interna surface induce remarkable flowing properties for water molecules. In this article, thinnin technology process is investigated to obtain composite film with opened CNT. Different etching techniques as grinding, Chemical Mechanical Polishing (CMP) and isotropic plasma O2ar investigated in term of etching rate and membrane roughness, using AFM and SEM characterizations. Results show CMP process in lapping configuration permits to obtain agreement between high etching rate and membrane roughness. Moreover, to improve water flowing through membrane, O2plasma treatment is used to remove polymer residue spread over CNT. Joint use of lapping and plasma treatment permits to obtain 35μm-thick nanoporous membrane with well-opened protruding nanotubes.

Study of the Mechanism of Laser Etching Fused Silica Based on Barium Compound Powder Coating

2018 ◽  
Vol 30 (8) ◽  
pp. 724-727 ◽  
Author(s):  
Qidong Cong ◽  
Genfu Yuan ◽  
Chen Zhang ◽  
Baicheng Guo
Keyword(s):  
Powder Coating ◽  
Fused Silica ◽  
Laser Etching ◽  
Compound Powder

Low Energy Focused Ion Beam Processing

1992 ◽  
Vol 279 ◽  
Author(s):  
Kenji Gamo
Keyword(s):  
Focused Ion Beam ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Etching Rate ◽  
High Mobility ◽  
Low Energy ◽  
High Electron ◽  
Optimization Of Process Parameters ◽  
High Etching Rate

ABSTRACTFocused ion beam (FIB) techniques have many advantages which stem from being maskless and have attracted much interest for various applications includingin situprocessing. However, reduction of damage and improvement of throughput are problems awaiting solution. For reduction of damage, low energy FIB is promising and for improvement of throughput, understanding of the basic processes and optimization of process parameters based on this understanding is crucial. This paper discusses characteristics of low energy FIB system, ion beam assisted etching and ion implantation, and effect of damage with putting emphasize onin situfabrication. Low energy (0.05–25keV) FIB system being developed forms -lOOnm diameter ion beams and is connected with molecular beam epitaxy system. Many results indicate that low damage, maskless ion beam assisted etching is feasible using low energy beams. Recently it was also shown that for ion beam assisted etching of GaAs, pulse irradiation yields very high etching rate of 500/ion. This indicates that the optimization of the relative ratio of ion irradiation and reactant gas supply as important to achieve high etching rate. Low energy FIB is also important for selective doping for high electron mobility heterostructures of GaAs/GaAlAs, because high mobility is significantly degraded by a slight damage.

Unexpectedly High Etching Rate of Highly Doped n-Type Crystalline Silicon in Hydrofluoric Acid

2013 ◽  
Vol 2 (9) ◽  
pp. P380-P383 ◽  
Author(s):  
L. Liu ◽  
F. Lin ◽  
M. Heinrich ◽  
A. G. Aberle ◽  
B. Hoex
Keyword(s):  
Hydrofluoric Acid ◽  
Crystalline Silicon ◽  
Etching Rate ◽  
High Etching Rate

scholarly journals 4H-Silicon Carbide Wafer Surface after Chlorine Trifluoride Gas Etching

2018 ◽  
Vol 924 ◽  
pp. 369-372 ◽  
Author(s):  
Shogo Okuyama ◽  
Keisuke Kurashima ◽  
Ken Nakagomi ◽  
Hitoshi Habuka ◽  
Yoshinao Takahashi ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Etching Rate ◽  
Concentric Circle ◽  
Wafer Surface ◽  
Deep Etching ◽  
Gas Distributor ◽  
High Etching Rate ◽  
Hole Arrays ◽  
Rate Profile ◽  
Gas Supply

In order to develop the high etching rate reactor for silicon carbide, the 50-mm-diameter C-face 4H-silicon carbide wafer was etched using the chlorine trifluoride gas at 500 °C. By the deep etching, the concentric-circle-shaped valleys were formed at the positions corresponding to the radii of the pin-hole arrays of the gas distributor, as predicted by the calculation. The etching rate profile of 4H-silicon carbide was concluded to have a relationship with the local chlorine trifluoride gas supply . The wafer bow was small, even the wafer was very thin, about 160 μm thick.

scholarly journals A New Dry Etching Method with the High Etching Rate for Patterning Cross–Linked SU–8 Thick Films

2016 ◽  
Vol 67 (3) ◽  
pp. 212-216 ◽  
Author(s):  
Jingning Han ◽  
Zhifu Yin ◽  
Helin Zou ◽  
Wenqiang Wang ◽  
Jianbo Feng
Keyword(s):  
Etching Rate ◽  
Chamber Pressure ◽  
Gas Mixture ◽  
Substrate Holder ◽  
Rf Power ◽  
Gas Concentration ◽  
High Etching Rate ◽  
Mems Device ◽  
The Cross ◽  
Difficult Issue

Abstract Photo sensitive polymer SU-8, owing to its excellent mechanical properties and dielectric properties on polymerization, is widely used in MEMS device fabrications. However, the removing, stripping or re-patterning of the cross-linked SU-8 is a difficult issue. In this paper, CF4/O2 gas mixture provided by a plasma asher equipment was used for the patterning of cross-linked SU-8 material. The RF power, the temperature of the substrate holder, chamber pressure and gas concentration were optimized for the cross-linked SU-8 etching process. When the CF4/O2 mixture contains about 5%CF4 by volume, the etching rate can be reached at 5.2 μm/min.

Pulsed Laser Etching of GaN and AIN Films

1997 ◽  
Vol 482 ◽  
Author(s):  
H. Chen ◽  
R. D. Vispute ◽  
V. Talyansky ◽  
R. Enck ◽  
S. B. Ogale ◽  
...  
Keyword(s):  
Energy Density ◽  
Laser Energy ◽  
Etching Rate ◽  
Pulsed Laser ◽  
Dry Etching ◽  
Laser Energy Density ◽  
Etch Depth ◽  
Layer By Layer ◽  
Laser Etching ◽  
Wide Range

AbstractDue to limited success in wet etching of GaN and AIN, dry etching techniques have become more relevant for the processing of the GaN films. Here we demonstrate the results of an alternative dry etching process, namely, pulsed laser etching, for GaN and AIN. In this method, a KrF pulsed excimer laser (λ=248 nm, τ=30 ns) was used to etch epitaxial GaN and AIN films. The dependence of the etching characteristics on the laser energy density and the number of pulses has been studied. The etch depth showed a linear dependence on the number of pulses over a wide range of laser energy densities. The threshold intensity for GaN etching was determined to be 0.33 J/cm2. The etching rate was found to be a strong function of laser energy density. Above the threshold, the etch rate was found to be 300–1400 Å per pulse leading to etching rates of 0.1–1μm/sec depending upon the laser energy density and the pulse repetition rate. It is shown that the etching mechanism is based on laser induced absorption, decomposition and layer by layer removal of the GaN.

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