Properties of ZnO thin films grown on Si substrates in vacuum and oxygen ambient by pulsed laser deposition

2007 ◽  
Vol 253 (14) ◽  
pp. 6255-6258 ◽  
Author(s):  
Jie Zhao ◽  
Lizhong Hu ◽  
Weifeng Liu ◽  
Zhaoyang Wang
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Si Substrates

Characterization of low resistivity Ga-doped ZnO thin films on Si substrates prepared by pulsed laser deposition

2019 ◽  
Vol 6 (10) ◽  
pp. 106421
Author(s):  
Guankong Mo ◽  
Jiahui Liu ◽  
Guotao Lin ◽  
Zhuoliang Zou ◽  
Zeqi Wei ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Low Resistivity ◽  
Si Substrates ◽  
Doped Zno

Electrical Properties of ZnO Thin Films Deposited by Pulsed Laser Deposition.

2004 ◽  
Vol 829 ◽  
Author(s):  
S. P. Heluani ◽  
G. Simonelli ◽  
M. Villafuerte ◽  
G. Juarez ◽  
A. Tirpak ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Axis Orientation ◽  
Si Substrates ◽  
N2 Atmosphere ◽  
Doping Effects ◽  
High O2

ABSTRACTStructural and electronic transport properties of polycrystalline ZnO thin films, prepared by pulsed laser deposition, have been investigated. The films were deposited on glass and Si3N4/Si substrates using O2 and N2 atmospheres. X-ray analysis revealed preferential c-axis orientation perpendicular to the sample substrate. Films deposited under relatively high O2 pressure were highly resistive. However, the conductivity σ increased while the films were irradiated with ultraviolet light, showing an Arrhenius (In σ ∝ T-1) dependence as a function of temperature. The ZnO film deposited in N2 atmosphere exhibited at room temperature a resistivity ∼ 1 Ω cm, and a sheet carrier concentration ∼ 5 1012 cm-2. The variation of the conductivity with temperature, in the range 60 – 150 K, follows a In σ ∝ T-1/4 dependence characteristic of variable range hopping. An analysis of the experimental results of conductivity as a function of temperature, in terms of possible doping effects, as well as conduction mechanisms is presented.

Electroreflectance study of antimony doped ZnO thin films grown by pulsed laser deposition

2021 ◽  
Vol 120 ◽  
pp. 111461
Author(s):  
Sukittaya Jessadaluk ◽  
Narathon Khemasiri ◽  
Prapakorn Rattanawarinchai ◽  
Navaphun Kayunkid ◽  
Sakon Rahong ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Doped Zno

Epitaxial growth of Al-doped ZnO thin films grown by pulsed laser deposition

2002 ◽  
Vol 420-421 ◽  
pp. 107-111 ◽  
Author(s):  
H Kim ◽  
J.S Horwitz ◽  
S.B Qadri ◽  
D.B Chrisey
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Doped Zno

ZnO thin films on Si(1 1 1) grown by pulsed laser deposition from metallic Zn target

2006 ◽  
Vol 253 (2) ◽  
pp. 841-845 ◽  
Author(s):  
Jie Zhao ◽  
Lizhong Hu ◽  
Zhaoyang Wang ◽  
Jie Sun ◽  
Zhijun Wang
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films
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