Current conduction mechanism in Al/p-Si Schottky barrier diodes with native insulator layer at low temperatures

2007 ◽  
Vol 253 (11) ◽  
pp. 5056-5061 ◽  
Author(s):  
Ş. Altındal ◽  
H. Kanbur ◽  
D.E. Yıldız ◽  
M. Parlak
Keyword(s):  
Schottky Barrier ◽  
Low Temperatures ◽  
Conduction Mechanism ◽  
Schottky Barrier Diodes ◽  
Insulator Layer ◽  
Current Conduction

scholarly journals Anomalous current transport in Au/low-doped n-GaAs Schottky barrier diodes at low temperatures

1999 ◽  
Vol 68 (1) ◽  
pp. 49-55 ◽  
Author(s):  
S. Hardikar ◽  
M.K. Hudait ◽  
P. Modak ◽  
S.B. Krupanidhi ◽  
N. Padha
Keyword(s):  
Schottky Barrier ◽  
Low Temperatures ◽  
Current Transport ◽  
Schottky Barrier Diodes

The barrier height inhomogeneity in Al/p-Si Schottky barrier diodes with native insulator layer

2006 ◽  
Vol 252 (22) ◽  
pp. 7749-7754 ◽  
Author(s):  
İlbilge Dökme ◽  
Şemsettin Altindal ◽  
M. Mahir Bülbül
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Diodes ◽  
Insulator Layer

Impact of Embedding Schottky Barrier Diodes into 3.3 kV and 6.5 kV SiC MOSFETs

2018 ◽  
Vol 924 ◽  
pp. 663-666 ◽  
Author(s):  
Koutarou Kawahara ◽  
Shiro Hino ◽  
Koji Sadamatsu ◽  
Yukiyasu Nakao ◽  
Toshiaki Iwamatsu ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Active Area ◽  
Schottky Barrier Diodes ◽  
Current Conduction

External Schottky barrier diodes (SBDs) used as free-wheel diodes should be larger in higher voltage devices to avoid bipolar degradation consequent on current conduction of body diodes in SiC MOSFETs. By embedding an external SBD into an SiC MOSFET, we achieved compact 3.3 kV and 6.5 kV SiC MOSFETs that are free from bipolar degradation. The active area of the 3.3 kV/6.5 kV samples is only about a half/quarter of the total active area of a conventional MOSFET and a coupled external SBD.

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