Effect of post-annealing temperature on the microstructure and magnetic properties of Ce:YIG thin films deposited on Si substrates

2006 ◽  
Vol 253 (4) ◽  
pp. 2108-2112 ◽  
Author(s):  
Xiongtu Zhou ◽  
Wenjuan Cheng ◽  
Fangting Lin ◽  
Xueming Ma ◽  
Wangzhou Shi
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Annealing Temperature ◽  
Si Substrates ◽  
Post Annealing ◽  
Post Annealing Temperature ◽  
Microstructure And Magnetic Properties

scholarly journals Optimizing the Properties of La0.8Sr0.2CrO3 Thin Films through Post-Annealing for High-Temperature Sensing

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1802
Author(s):  
Dan Liu ◽  
Peng Shi ◽  
Yantao Liu ◽  
Yijun Zhang ◽  
Bian Tian ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
Maximum Size ◽  
Cross Sectional ◽  
Post Annealing ◽  
Maximum Conductivity ◽  
Different Temperatures ◽  
Post Annealing Temperature

La0.8Sr0.2CrO3 (0.2LSCO) thin films were prepared via the RF sputtering method to fabricate thin-film thermocouples (TFTCs), and post-annealing processes were employed to optimize their properties to sense high temperatures. The XRD patterns of the 0.2LSCO thin films showed a pure phase, and their crystallinities increased with the post-annealing temperature from 800 °C to 1000 °C, while some impurity phases of Cr2O3 and SrCr2O7 were observed above 1000 °C. The surface images indicated that the grain size increased first and then decreased, and the maximum size was 0.71 μm at 1100 °C. The cross-sectional images showed that the thickness of the 0.2LSCO thin films decreased significantly above 1000 °C, which was mainly due to the evaporation of Sr2+ and Cr3+. At the same time, the maximum conductivity was achieved for the film annealed at 1000 °C, which was 6.25 × 10−2 S/cm. When the thin films post-annealed at different temperatures were coupled with Pt reference electrodes to form TFTCs, the trend of output voltage to first increase and then decrease was observed, and the maximum average Seebeck coefficient of 167.8 µV/°C was obtained for the 0.2LSCO thin film post-annealed at 1100 °C. Through post-annealing optimization, the best post-annealing temperature was 1000 °C, which made the 0.2LSCO thin film more stable to monitor the temperatures of turbine engines for a long period of time.

Effect of Annealing on Structural and Optical Properties of Pulsed Laser Deposited Titanium Dioxide Thin Films

2009 ◽  
Vol 67 ◽  
pp. 65-70 ◽  
Author(s):  
Gaurav Shukla ◽  
Alika K. Khare
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Pulsed Laser Deposition ◽  
Annealing Temperature ◽  
Ambient Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Tio2 Thin Films ◽  
Post Annealing ◽  
Post Annealing Temperature

TiO2 is a widely studied material for many important applications in areas such as environmental purification, photocatalyst, gas sensors, cancer therapy and high effect solar cell. However, investigations demonstrated that the properties and applications of titanium oxide films depend upon the nature of the crystalline phases present in the films, i.e. anatase and rutile phases. We report on the pulsed laser deposition of high quality TiO2 thin films. Pulsed Laser deposition of TiO2 thin films were performed in different ambient viz. oxygen, argon and vacuum, using a second harmonic of Nd:YAG laser of 6 ns pulse width. These deposited films of TiO2 were further annealed for 5hrs in air at different temperatures. TiO2 thin films were characterized using x-ray diffraction, SEM, photoluminescence, transmittance and reflectance. We observed effect of annealing over structural, morphological and optical properties of TiO2 thin films. The anatase phase of as-deposited TiO2 thin films is found to change into rutile phase with increased annealing temperature. Increase in crystalline behaviour of thin films with post-annealing temperature is also observed. Surface morphology of TiO2 thin films is dependent upon ambient pressure and post- annealing temperature. TiO2 thin films are found to be optically transparent with very low reflectivity hence will be suitable for antireflection coating applications.

Post-annealing-temperature-dependent Magnetic Anisotropy of CoFe$_2$O$_4$ Thin Films

2013 ◽  
Vol 63 (12) ◽  
pp. 1328-1332
Author(s):  
D. Y. Lee ◽  
C. -W. Cho ◽  
S. H. Lee ◽  
J. W. Kim ◽  
H. K. Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Anisotropy ◽  
Annealing Temperature ◽  
Temperature Dependent ◽  
Post Annealing ◽  
Post Annealing Temperature

Microstructure and magnetic properties of CoFe2O4 thin films deposited on Si substrates with an Fe3O4 under-layer

2011 ◽  
Vol 54 (7) ◽  
pp. 1235-1238 ◽  
Author(s):  
ZhiYong Zhong ◽  
HuaiWu Zhang ◽  
XiaoLi Tang ◽  
YuLan Jing ◽  
FeiMing Bai ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Si Substrates ◽  
Microstructure And Magnetic Properties

scholarly journals Deposition of Lu-Fe-O thin films on silica glass substrates by MOCVD

2020 ◽  
Vol 233 ◽  
pp. 05006
Author(s):  
A.F. Cardoso ◽  
A.A. Bassou ◽  
V.S. Amaral ◽  
J.R. Fernandes ◽  
P.B. Tavares
Keyword(s):  
Thin Films ◽  
Silica Glass ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Magnetic Measurements ◽  
Garnet Phase ◽  
Glass Substrates ◽  
Post Annealing ◽  
Post Annealing Temperature ◽  
Deposition Conditions

Thin films of the Lu-Fe-O system were deposited by aerosol assisted MOCVD on silica glass substrates. Hexagonal h-LuFeO3, garnet Lu3Fe5O12, perovskite o-LuFeO3 or hematite Fe2O3 phases were obtained, depending on the thermodynamic deposition conditions or post annealing temperature. Magnetic measurements confirm the ferromagnetic behaviour at room temperature of the thin films with garnet phase. An indirect bandgap of 1.78 eV was measured.

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