Synthesis and characterization of Al–N codoped p-type ZnO epitaxial films using high-temperature homo-buffer layer

2006 ◽  
Vol 253 (4) ◽  
pp. 1903-1906 ◽  
Author(s):  
Q.Y. Zhu ◽  
Z.Z. Ye ◽  
G.D. Yuan ◽  
J.Y. Huang ◽  
L.P. Zhu ◽  
...  
Keyword(s):  
High Temperature ◽  
Buffer Layer ◽  
Epitaxial Films ◽  
Synthesis And Characterization ◽  
P Type

scholarly journals Multianvil High-Pressure/High-Temperature Synthesis and Characterization of multiferroic HP-Co3TeO6

2021 ◽  
Author(s):  
Gunter Heymann ◽  
Elisabeth Selb ◽  
Toni Buttlar ◽  
Oliver Janka ◽  
Martina Tribus ◽  
...  
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Type Structure ◽  
Synthesis And Characterization ◽  
Temperature Synthesis ◽  
Space Group ◽  
Crystal System ◽  
High Temperature Synthesis ◽  
High Pressure High Temperature

By high-pressure/high-temperature multianvil synthesis a new high-pressure (HP) phase of Co3TeO6 was obtained. The compound crystallizes in the acentric trigonal crystal system of the Ni3TeO6-type structure with space group R3...

scholarly journals High-pressure synthesis and characterization of the non-centrosymmetric scandium borate ScB6O9(OH)3

2020 ◽  
Vol 75 (6-7) ◽  
pp. 597-603
Author(s):  
Birgit Fuchs ◽  
Hubert Huppertz
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Synthesis And Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
High Pressure High Temperature ◽  
Structure Solution ◽  
Temperature Experiment ◽  
Pressure Synthesis

AbstractThe non-centrosymmetric scandium borate ScB6O9(OH)3 was obtained through a high-pressure/high-temperature experiment at 6 GPa and 1473 K. Single-crystal X-ray diffraction revealed that the structure is isotypic to InB6O9(OH)3 containing borate triple layers separated by scandium layers. The compound crystallizes in the space group Fdd2 with the lattice parameters a = 38.935(4), b = 4.4136(4), and c = 7.6342(6) Å. Powder X-ray diffraction and vibrational spectroscopy were used to further characterize the compound and verify the proposed structure solution.

Growth and characterization of GaN films on Si(111) substrate using high-temperature AlN buffer layer

2005 ◽  
Vol 198 (1-3) ◽  
pp. 350-353 ◽  
Author(s):  
Xianfeng Ni ◽  
Liping Zhu ◽  
Zhizhen Ye ◽  
Zhe Zhao ◽  
Haiping Tang ◽  
...  
Keyword(s):  
High Temperature ◽  
Buffer Layer ◽  
Aln Buffer

Synthesis and Characterization of a p-Type Boron Arsenide Photoelectrode

2012 ◽  
Vol 134 (27) ◽  
pp. 11056-11059 ◽  
Author(s):  
Shijun Wang ◽  
Sarah F. Swingle ◽  
Heechang Ye ◽  
Fu-Ren F. Fan ◽  
Alan H. Cowley ◽  
...  
Keyword(s):  
Synthesis And Characterization ◽  
Boron Arsenide ◽  
P Type

Synthesis and characterization of p-type transparent conducting Ni1-xRuxO (0 ≤x ≤ 0.1) films prepared by pulsed laser deposition

2019 ◽  
Vol 45 (6) ◽  
pp. 7984-7994 ◽  
Author(s):  
Ahmed Alshahrie ◽  
S. Joudakzis ◽  
A.A. Al-Ghamdi ◽  
Lyudmila M. Bronstein ◽  
Waleed E. Mahmoud
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Synthesis And Characterization ◽  
Transparent Conducting ◽  
P Type

High-temperature synthesis and characterization of boron suboxide (B6O) and boron containing hard materials

2019 ◽  
Vol 16 ◽  
pp. 95-101
Author(s):  
Jelena Maletaškić ◽  
Jelena Luković ◽  
Katsumi Yoshida ◽  
Toyohiko Yano ◽  
Ryosuke S.S. Maki ◽  
...  
Keyword(s):  
High Temperature ◽  
Synthesis And Characterization ◽  
Temperature Synthesis ◽  
Hard Materials ◽  
High Temperature Synthesis ◽  
Boron Suboxide
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