Size-dependent thermodynamic criterion for the thermal stability of binary immiscible metallic multilayers

2006 ◽  
Vol 252 (11) ◽  
pp. 3993-3996 ◽  
Author(s):  
G. Ouyang ◽  
C.X. Wang ◽  
S.W. Li ◽  
X. Zhou ◽  
G.W. Yang
Keyword(s):  
Thermal Stability ◽  
Metallic Multilayers ◽  
Size Dependent ◽  
Thermodynamic Criterion ◽  
Thermal Stability Of

Thermal stability of TPA template and size-dependent selectivity of uncalcined TS-1 supported Au catalyst for propene epoxidation with H2 and O2

RSC Advances ◽  
2016 ◽  
Vol 6 (50) ◽  
pp. 44050-44056 ◽  
Author(s):  
X. Feng ◽  
D. Chen ◽  
X. G. Zhou
Keyword(s):  
Thermal Stability ◽  
Reaction Temperature ◽  
Formation Rate ◽  
Au Catalyst ◽  
Size Dependent ◽  
Thermal Stability Of

An Au/TS-1-B catalyst, whose internal TPA template is stable below 350 °C, shows volcano-shaped activity with reaction temperature and reaches a noteworthy PO formation rate (220 gPO h−1 kgCat−1) at 260 °C. Moreover, intrinsic size-dependent selectivity is also studied.

Thermal stability of nanoscale metallic multilayers

2014 ◽  
Vol 571 ◽  
pp. 268-274 ◽  
Author(s):  
A.S. Ramos ◽  
A.J. Cavaleiro ◽  
M.T. Vieira ◽  
J. Morgiel ◽  
G. Safran
Keyword(s):  
Thermal Stability ◽  
Metallic Multilayers ◽  
Nanoscale Metallic Multilayers ◽  
Thermal Stability Of

scholarly journals In-situ TEM Study on Size-dependent Thermal Stability of Nickel Filled Silica Nano-Opals

2017 ◽  
Vol 23 (S1) ◽  
pp. 956-957 ◽  
Author(s):  
Parivash Moradifar ◽  
Yunzhi Liu ◽  
Jennifer L. Russell ◽  
Thomas E. Mallouk ◽  
John Badding ◽  
...  
Keyword(s):  
Thermal Stability ◽  
In Situ Tem ◽  
Size Dependent ◽  
Thermal Stability Of

scholarly journals Isogeometric analysis for size-dependent nonlinear thermal stability of porous FG microplates

2019 ◽  
Vol 221 ◽  
pp. 110838 ◽  
Author(s):  
Cuong-Le Thanh ◽  
Loc V. Tran ◽  
Tinh Quoc Bui ◽  
Hoang X. Nguyen ◽  
M. Abdel-Wahab
Keyword(s):  
Thermal Stability ◽  
Isogeometric Analysis ◽  
Size Dependent ◽  
Thermal Stability Of

Size-dependent formation and thermal stability of high-order twins in hierarchical nanotwinned metals

2020 ◽  
Vol 128 ◽  
pp. 102685 ◽  
Author(s):  
Ligang Sun ◽  
Dongfeng Li ◽  
Linli Zhu ◽  
Haihui Ruan ◽  
Jian Lu
Keyword(s):  
Thermal Stability ◽  
High Order ◽  
Size Dependent ◽  
Thermal Stability Of

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

Thermal stability of Al-Cu-Fe icosahedral alloys

1991 ◽  
Vol 1 (12) ◽  
pp. 1823-1836 ◽  
Author(s):  
M. Bessière ◽  
A. Quivy ◽  
S. Lefebvre ◽  
J. Devaud-Rzepski ◽  
Y. Calvayrac
Keyword(s):  
Thermal Stability ◽  
Thermal Stability Of
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