The interfacial structures of (Ba, Sr)TiO3 films deposited by radio frequency magnetron sputtering

2006 ◽  
Vol 252 (20) ◽  
pp. 7407-7414 ◽  
Author(s):  
J.X. Liao ◽  
C.R. Yang ◽  
J.H. Zhang ◽  
C.L. Fu ◽  
H.W. Chen ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
Interfacial Structures

scholarly journals Effects in the Optical and Structural Properties Caused by Mg or Zn Doping of GaN Films Grown via Radio-Frequency Magnetron Sputtering Using Laboratory-Prepared Targets

2021 ◽  
Vol 11 (15) ◽  
pp. 6990
Author(s):  
Erick Gastellóu ◽  
Godofredo García ◽  
Ana María Herrera ◽  
Crisoforo Morales ◽  
Rafael García ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Hexagonal Structure ◽  
Binding Energies ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
X Ray ◽  
Diffraction Patterns ◽  
Mg Doped

GaN films doped with Mg or Zn were obtained via radio-frequency magnetron sputtering on silicon substrates at room temperature and used laboratory-prepared targets with Mg-doped or Zn-doped GaN powders. X-ray diffraction patterns showed broadening peaks, which could have been related to the appearance of nano-crystallites with an average of 7 nm. Scanning electron microscopy and transmission electron microscopy showed good adherence to silicon non-native substrate, as well as homogeneity, with a grain size average of 0.14 µm, and 0.16 µm for the GaN films doped with Zn or Mg, respectively. X-ray photo-electron spectroscopy demonstrated the presence of a very small amount of magnesium (2.10 mol%), and zinc (1.15 mol%) with binding energies of 1303.18, and 1024.76 eV, respectively. Photoluminescence spectrum for the Zn-doped GaN films had an emission range from 2.89 to 3.0 eV (429.23–413.50 nm), while Mg-doped GaN films had an energy emission in a blue-violet band with a range from 2.80 to 3.16 eV (443.03–392.56 nm). Raman spectra showed the classical vibration modes A1(TO), E1(TO), and E2(High) for the hexagonal structure of GaN.

scholarly journals Effects of Thermal Annealing on the Properties of Zirconium-Doped MgxZn1−XO Films Obtained through Radio-Frequency Magnetron Sputtering

Membranes ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 373
Author(s):  
Wen-Yen Lin ◽  
Feng-Tsun Chien ◽  
Hsien-Chin Chiu ◽  
Jinn-Kong Sheu ◽  
Kuang-Po Hsueh
Keyword(s):  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Photoelectron Spectroscopy ◽  
Annealing Temperature ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Free Electrons ◽  
X Ray ◽  
Mg Content

Zirconium-doped MgxZn1−xO (Zr-doped MZO) mixed-oxide films were investigated, and the temperature sensitivity of their electric and optical properties was characterized. Zr-doped MZO films were deposited through radio-frequency magnetron sputtering using a 4-inch ZnO/MgO/ZrO2 (75/20/5 wt%) target. Hall measurement, X-ray diffraction (XRD), transmittance, and X-ray photoelectron spectroscopy (XPS) data were obtained. The lowest sheet resistance, highest mobility, and highest concentration were 1.30 × 103 Ω/sq, 4.46 cm2/Vs, and 7.28 × 1019 cm−3, respectively. The XRD spectra of the as-grown and annealed Zr-doped MZO films contained MgxZn1−xO(002) and ZrO2(200) coupled with Mg(OH)2(101) at 34.49°, 34.88°, and 38.017°, respectively. The intensity of the XRD peak near 34.88° decreased with temperature because the films that segregated Zr4+ from ZrO2(200) increased. The absorption edges of the films were at approximately 348 nm under 80% transmittance because of the Mg content. XPS revealed that the amount of Zr4+ increased with the annealing temperature. Zr is a potentially promising double donor, providing up to two extra free electrons per ion when used in place of Zn2+.

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