Intrinsic coercivities of molecular beam epitaxy grown single-crystal Ni films on Ag buffer layer

2005 ◽  
Vol 252 (5) ◽  
pp. 1934-1940 ◽  
Author(s):  
S.U. Jen ◽  
T.C. Wu ◽  
C.C. Yu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Grown Single Crystal

scholarly journals Investigation of GaAs surface treatments for ZnSe growth by molecular beam epitaxy without a buffer layer

2021 ◽  
Vol 549 ◽  
pp. 149245
Author(s):  
Chaomin Zhang ◽  
Kirstin Alberi ◽  
Christiana Honsberg ◽  
Kwangwook Park
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Surface Treatments ◽  
Gaas Surface

Metalorganic Molecular Beam Epitaxy of GaAsP for Visible Light-Emitting Devices on Si

1998 ◽  
Vol 535 ◽  
Author(s):  
M. Yoshimoto ◽  
J. Saraie ◽  
T. Yasui ◽  
S. HA ◽  
H. Matsunami
Keyword(s):  
Molecular Beam Epitaxy ◽  
Visible Light ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Infrared Light ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Good Crystallinity ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Pre Treatment

AbstractGaAs1–xPx (0.2 <; x < 0.7) was grown by metalorganic molecular beam epitaxy with a GaP buffer layer on Si for visible light-emitting devices. Insertion of the GaP buffer layer resulted in bright photoluminescence of the GaAsP epilayer. Pre-treatment of the Si substrate to avoid SiC formation was also critical to obtain good crystallinity of GaAsP. Dislocation formation, microstructure and photoluminescence in GaAsP grown layer are described. A GaAsP pn junction fabricated on GaP emitted visible light (˜1.86 eV). An initial GaAsP pn diode fabricated on Si emitted infrared light.

A Study on the Growth of Cubic GaN Films Using an AlGaAs Buffer Layer Grown on GaAs (100) by Plasma-Assisted Molecular Beam Epitaxy

2000 ◽  
Vol 639 ◽  
Author(s):  
Ryuhei Kimura ◽  
Kiyoshi Takahashi ◽  
H. T. Grahn
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Energy ◽  
Rf Plasma ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cubic Gan

ABSTRACTAn investigation of the growth mechanism for RF-plasma assisted molecular beam epitaxy of cubic GaN films using a nitrided AlGaAs buffer layer was carried out by in-situ reflection high energy electron diffraction (RHEED) and high resolution X-ray diffraction (HRXRD). It was found that hexagonal GaN nuclei grow on (1, 1, 1) facets during nitridation of the AlGaAs buffer layer, but a highly pure, cubic-phase GaN epilayer was grown on the nitrided AlGaAs buffer layer.

Strain relaxation in single crystal SrTiO3 grown on Si (001) by molecular beam epitaxy

2012 ◽  
Vol 111 (6) ◽  
pp. 064112 ◽  
Author(s):  
Miri Choi ◽  
Agham Posadas ◽  
Rytis Dargis ◽  
Chih-Kang Shih ◽  
Alexander A. Demkov ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Molecular Beam ◽  
Strain Relaxation

Novel InGaPBi single crystal grown by molecular beam epitaxy

2015 ◽  
Vol 8 (4) ◽  
pp. 041201 ◽  
Author(s):  
Li Yue ◽  
Peng Wang ◽  
Kai Wang ◽  
Xiaoyan Wu ◽  
Wenwu Pan ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Molecular Beam

Impact of Buffered Layer Growth Conditions on Grown-In Vacancy Concentrations in Molecular Beam Epitaxy Silicon Germanium

2004 ◽  
Vol 809 ◽  
Author(s):  
Kareem M. Shoukri ◽  
Yaser M. Haddara ◽  
Andrew P. Knights ◽  
Paul G. Coleman ◽  
Mohammad M. Rahman ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Point Defects ◽  
Growth Temperature ◽  
Silicon Germanium ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Layer Growth ◽  
Vacancy Clusters ◽  
Temperature And Growth

ABSTRACTSilicon-Germanium (SiGe) has become increasingly attractive to semiconductor manufacturers over the last decade for use in high performance devices. In order to produce thin layers of device grade SiGe with low concentrations of point defects and well-controlled doping profiles, advanced growth and deposition techniques such as molecular beam epitaxy (MBE) are used. One of the key issues in modeling dopant diffusion during subsequent processing is the concentration of grown-in point defects. The incorporation of vacancy clusters and vacancy point defects in 200nm SiGe/Si layers grown by molecular beam epitaxy over different buffer layers has been observed using beam-based positron annihilation spectroscopy. Variables included the type of buffer layer, the growth temperature and growth rate for the buffer, and the growth temperature and growth rate for the top layer. Different growth conditions resulted in different relaxation amounts in the top layer, but in all samples the dislocation density was below 106 cm−2. Preliminary results indicate a correlation between the size, type and concentration of vacancy defects and the buffer layer growth temperature. At high buffer layer growth temperature of 500°C the vacancy point defect concentration is below the PAS detectable limit of approximately 1015 cm−3. As the buffer layer growth is decreased to a minimum value of 300°C, large vacancy clusters are observed in the buffered layer and vacancy point defects are observed in the SiGe film. These results are relevant to the role played by point defects grown-in at temperatures below ∼350°C in modeling dopant diffusion during processing.

Summary Abstract: Growth of single crystal and polycrystalline insulating fluoride films on semiconductors by molecular beam epitaxy

1982 ◽  
Vol 20 (3) ◽  
pp. 731-732 ◽  
Author(s):  
P. W. Sullivan ◽  
T. I. Cox ◽  
R. F. C. Farrow ◽  
G. R. Jones ◽  
D. B. Gasson ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Molecular Beam
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