Local tunneling barrier height imaging of a reconstructed Pt(1 0 0) surface

2004 ◽  
Vol 237 (1-4) ◽  
pp. 583-588 ◽  
Author(s):  
Asawin Sinsarp ◽  
Yoichi Yamada ◽  
Masahiro Sasaki ◽  
Shigehiko Yamamoto
Keyword(s):  
Barrier Height ◽  
Tunneling Barrier ◽  
Barrier Height Imaging

Local Tunneling Barrier Height Imaging on Si(111) Surface

1997 ◽  
Vol 36 (Part 1, No. 6B) ◽  
pp. 3864-3867 ◽  
Author(s):  
Nobuhiro Horiguchi ◽  
Kazunori Yonei ◽  
Masahiro Miyao
Keyword(s):  
Barrier Height ◽  
Tunneling Barrier ◽  
Barrier Height Imaging

Tunneling barrier height imaging and polycrystalline Si surface observations

1990 ◽  
Vol 8 (1) ◽  
pp. 270-274 ◽  
Author(s):  
S. Hosaka ◽  
K. Sagara ◽  
T. Hasegawa ◽  
K. Takata ◽  
S. Hosoki
Keyword(s):  
Barrier Height ◽  
Tunneling Barrier ◽  
Barrier Height Imaging ◽  
Surface Observations

Local Tunneling Barrier Height on Si(111) Reconstructed Surfaces

1998 ◽  
Vol 37 (Part 1, No. 6B) ◽  
pp. 3782-3784 ◽  
Author(s):  
Nobuhiro Horiguchi ◽  
Kazunori Yonei ◽  
Masahiro Miyao
Keyword(s):  
Barrier Height ◽  
Tunneling Barrier ◽  
Reconstructed Surfaces

Scanning Tunneling Microscopy (STM)/Local Tunneling Barrier Height (LBH) Studies on Cs Adsorption on a Pt(111) Surface

2002 ◽  
Vol 41 (Part 1, No. 7B) ◽  
pp. 5003-5007 ◽  
Author(s):  
Yoichi Yamada ◽  
Asawin Sinsarp ◽  
Masahiro Sasaki ◽  
Shigehiko Yamamoto
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Barrier Height ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Tunneling Barrier

scholarly journals Oxidized-monolayer tunneling barrier for strong Fermi-level depinning in layered InSe transistors

2019 ◽  
Vol 3 (1) ◽  
Author(s):  
Yi-Hsun Chen ◽  
Chih-Yi Cheng ◽  
Shao-Yu Chen ◽  
Jan Sebastian Dominic Rodriguez ◽  
Han-Ting Liao ◽  
...  
Keyword(s):  
Fermi Level ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Surface Oxidation ◽  
Tunneling Barrier ◽  
Experimental Realization ◽  
Gap States

AbstractIn two-dimensional (2D)-semiconductor-based field-effect transistors and optoelectronic devices, metal–semiconductor junctions are one of the crucial factors determining device performance. The Fermi-level (FL) pinning effect, which commonly caused by interfacial gap states, severely limits the tunability of junction characteristics, including barrier height and contact resistance. A tunneling contact scheme has been suggested to address the FL pinning issue in metal–2D-semiconductor junctions, whereas the experimental realization is still elusive. Here, we show that an oxidized-monolayer-enabled tunneling barrier can realize a pronounced FL depinning in indium selenide (InSe) transistors, exhibiting a large pinning factor of 0.5 and a highly modulated Schottky barrier height. The FL depinning can be attributed to the suppression of metal- and disorder-induced gap states as a result of the high-quality tunneling contacts. Structural characterizations indicate uniform and atomically thin-surface oxidation layer inherent from nature of van der Waals materials and atomically sharp oxide–2D-semiconductor interfaces. Moreover, by effectively lowering the Schottky barrier height, we achieve an electron mobility of 2160 cm2/Vs and a contact barrier of 65 meV in two-terminal InSe transistors. The realization of strong FL depinning in high-mobility InSe transistors with the oxidized-monolayer presents a viable strategy to exploit layered semiconductors in contact engineering for advanced electronics and optoelectronics.

Local tunneling barrier height images obtained with the scanning tunneling microscope

1987 ◽  
Vol 189-190 ◽  
pp. 24-28 ◽  
Author(s):  
R. Wiesendanger ◽  
L. Eng ◽  
H.R. Hidber ◽  
P. Oelhafen ◽  
L. Rosenthaler ◽  
...  
Keyword(s):  
Barrier Height ◽  
Scanning Tunneling Microscope ◽  
Scanning Tunneling ◽  
Tunneling Barrier ◽  
Tunneling Microscope

Local Tunneling Barrier Height at and around Subsurface Dopant Sites on p-GaAs(110)

2010 ◽  
Vol 49 (10) ◽  
pp. 105201
Author(s):  
Kengo Kobayashi ◽  
Shu Kurokawa ◽  
Shigehiko Hasegawa ◽  
Akira Sakai
Keyword(s):  
Barrier Height ◽  
Tunneling Barrier

Barrier-height imaging of Cs-adsorbed Si(111)

2001 ◽  
Vol 169-170 ◽  
pp. 202-205 ◽  
Author(s):  
Jun Yoshikawa ◽  
Shu Kurokawa ◽  
Akira Sakai
Keyword(s):  
Barrier Height ◽  
Barrier Height Imaging

Tunneling barrier height at defect sites on Si(001)

1999 ◽  
Vol 441 (2-3) ◽  
pp. 542-548 ◽  
Author(s):  
Hiroyuki Fukumizu ◽  
Shu Kurokawa ◽  
Akira Sakai
Keyword(s):  
Barrier Height ◽  
Tunneling Barrier ◽  
Defect Sites
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