X-ray photoelectron spectroscopy characterisation of high-k dielectric Al2O3 and HfO2 layers deposited on SiO2/Si surface

2004 ◽  
Vol 235 (1-2) ◽  
pp. 21-25 ◽  
Author(s):  
R.G. Vitchev ◽  
J.J. Pireaux ◽  
T. Conard ◽  
H. Bender ◽  
J. Wolstenholme ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
X Ray ◽  
High K ◽  
High K Dielectric

X-ray photoelectron spectroscopy energy band alignment of spin-on CoTiO3 high-k dielectric prepared by sol-gel spin coating method

2008 ◽  
Vol 93 (9) ◽  
pp. 092907 ◽  
Author(s):  
Kuo-Hsing Kao ◽  
Shiow-Huey Chuang ◽  
Woei-Cherng Wu ◽  
Tien-Sheng Chao ◽  
Jian-Hao Chen ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Spin Coating ◽  
Energy Band ◽  
Sol Gel ◽  
Band Alignment ◽  
X Ray ◽  
Spin Coating Method ◽  
High K ◽  
Coating Method ◽  
High K Dielectric

Determination of band alignments at 2D tungsten disulfide/high-k dielectric oxides interfaces by x-ray photoelectron spectroscopy

2020 ◽  
Vol 505 ◽  
pp. 144521
Author(s):  
Changjie Zhou ◽  
Huili Zhu ◽  
Shaobin Pan ◽  
Tongchang Zheng ◽  
Xiaojing Huang ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Tungsten Disulfide ◽  
X Ray ◽  
High K ◽  
Band Alignments ◽  
High K Dielectric

Band offsets of epitaxial Tm2O3 high-k dielectric films on Si substrates by X-ray photoelectron spectroscopy

2012 ◽  
Vol 258 (16) ◽  
pp. 6107-6110 ◽  
Author(s):  
J.J. Wang ◽  
Z.B. Fang ◽  
T. Ji ◽  
W.Y. Ren ◽  
Y.Y. Zhu ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Dielectric Films ◽  
Band Offsets ◽  
X Ray ◽  
Si Substrates ◽  
High K ◽  
High K Dielectric

Effect of GaAs Surface Treatments on Lanthanum Silicate High-K Dielectric Gate Stack Properties

2008 ◽  
Vol 1073 ◽  
Author(s):  
Daniel J Lichtenwalner ◽  
Rahul Suri ◽  
Veena Misra
Keyword(s):  
Photoelectron Spectroscopy ◽  
Gate Stacks ◽  
X Ray ◽  
Gaas Substrates ◽  
High K ◽  
High K Dielectric ◽  
P Type ◽  
Lanthanum Silicate ◽  
Mos Device

ABSTRACTThe properties of lanthanum silicate (LaSiOx) gate stacks on GaAs substrates have been examined, comparing different GaAs pretreatments; namely a) as-received, b) HCl-treated, and c) sulphur-treated. X-ray photoelectron spectroscopy of the As 3d, Ga 3d, and Ga 2p binding energy peaks were used to reveal the chemical nature of the stacks. After a 400 °C in situ anneal in 10−6 torr pO2, the LaSiOx chemically reduces the As oxides from the as-received GaAs, while Ga oxide species remain. HCl and S-treated GaAs similarly show no As oxides, and a much smaller degree of Ga oxides than the as-received case. The Ga-S bonding may be responsible for lowering the tendency towards Ga oxidation for the S-treated case. On p-type, Zn-doped GaAs, 3.0 nm lanthanum silicate films produce MOS device EOT values of 2.38 nm, 1.51 nm, and 1.37 nm, on as-received, HCl-treated, and S-treated substrates, respectively. The high EOT for the as-received GaAs corresponds to the thicker Ga oxide and elemental As at the interface. The decreases in both Ga oxide and elemental As at the interface of the S-treated stack appears to be related to it having the lowest EOT devices.

STUDY OF THE GATE INSULATOR/SILICON INTERFACE UTILIZING SOFT AND HARD X-RAY PHOTOELECTRON SPECTROSCOPY AT SPring-8

2006 ◽  
Vol 16 (01) ◽  
pp. 353-364 ◽  
Author(s):  
T. HATTORI ◽  
H. NOHIRA ◽  
K. AZUMA ◽  
K. W. SAKAI ◽  
K. NAKAJIMA ◽  
...  
Keyword(s):  
Photon Energy ◽  
Energy Resolution ◽  
Photoelectron Spectroscopy ◽  
Chemical Structure ◽  
Gate Insulator ◽  
X Ray ◽  
Chemical Structures ◽  
High K ◽  
High K Dielectric ◽  
Silicon Interface

The chemical structures of SiO 2/ Si interfaces were studied by photoelectron spectroscopy using high-brilliance soft X-ray with photon energy ranging from 500 to 1500 eV at Super Photon ring 8 GeV(SPring-8) and it is able to probe a depth of about 1.2 to 3 nm with energy resolution of 100 meV. On the other hand, high-brilliance hard X-ray with photon energy ranging from 6 to 10 keV is able to probe a depth of about 8.5 to 12.5 nm with energy resolution of 100 meV. Hard photoelectron spectroscopy are particularly useful for studying the composition and the chemical structure of transition layer at high-k dielectric/silicon interface.

Growth and Properties of Gadolinium Oxide Dielectric Layers on Silicon Carbide for High-K Application

2007 ◽  
Vol 556-557 ◽  
pp. 655-658 ◽  
Author(s):  
Andreas Fissel ◽  
M. Czernohorsky ◽  
R. Dagris ◽  
H.J. Osten
Keyword(s):  
Photoelectron Spectroscopy ◽  
Gadolinium Oxide ◽  
Flat Band ◽  
Growth Interface ◽  
X Ray ◽  
Fixed Charges ◽  
High K ◽  
Structural And Electrical Properties ◽  
Cv Measurements ◽  
Oriented Layers

We investigated the growth, interface formation as well as the structural and electrical properties of crystalline gadolinium oxide (Gd2O3) directly grown on 6H-SiC(0001) substrates by molecular beam epitaxy. The Gd2O3 layers were found to grow epitaxially resulting in the formation of flat (111) oriented layers with the cubic bixbyite type of structure. X-ray photoelectron spectroscopy measurements reveal a silicate-like Gd2O3/SiC interface. Furthermore, conduction and valence band discontinuities at the Gd2O3/6H-SiC interface were estimated with 1.9 eV and 1.2 eV, respectively. The fabricated capacitors exhibit suitable dielectric properties at room temperature; such as a dielectric constant of ε = 22, a leakage current of 10-8 A/cm2@1V and breakdown fields > 4.3 MV/cm for layers with 14 nm thickness. The CV measurements exhibit only small negative flat band shifts and a very small hysteresis, resulting from fixed charges or interface trap levels in the range of 1x1012 cm-2. These properties make Gd2O3 suitable for high-k application also for SiC.

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