Room temperature corrosion of museum glass: an investigation using low-energy SIMS

2004 ◽  
Vol 231-232 ◽  
pp. 510-514 ◽  
Author(s):  
Sarah Fearn ◽  
David S. McPhail ◽  
Victoria Oakley
Keyword(s):  
Room Temperature ◽  
Low Energy

scholarly journals Low-energy room-temperature optical switching in mixed-dimensionality nanoscale perovskite heterojunctions

2021 ◽  
Vol 7 (18) ◽  
pp. eabf1959
Author(s):  
Ji Hao ◽  
Young-Hoon Kim ◽  
Severin N. Habisreutinger ◽  
Steven P. Harvey ◽  
Elisa M. Miller ◽  
...  
Keyword(s):  
Optical Switching ◽  
Room Temperature ◽  
Optical Memory ◽  
Low Energy ◽  
Optical Measurements ◽  
Ion Migration ◽  
Metal Halide Perovskite ◽  
Conductance Changes ◽  
Optical Domain ◽  
Walled Carbon Nanotubes

Long-lived photon-stimulated conductance changes in solid-state materials can enable optical memory and brain-inspired neuromorphic information processing. It remains challenging to realize optical switching with low-energy consumption, and new mechanisms and design principles giving rise to persistent photoconductivity (PPC) can help overcome an important technological hurdle. Here, we demonstrate versatile heterojunctions between metal-halide perovskite nanocrystals and semiconducting single-walled carbon nanotubes that enable room-temperature, long-lived (thousands of seconds), writable, and erasable PPC. Optical switching and basic neuromorphic functions can be stimulated at low operating voltages with femto- to pico-joule energies per spiking event, and detailed analysis demonstrates that PPC in this nanoscale interface arises from field-assisted control of ion migration within the nanocrystal array. Contactless optical measurements also suggest these systems as potential candidates for photonic synapses that are stimulated and read in the optical domain. The tunability of PPC shown here holds promise for neuromorphic computing and other technologies that use optical memory.

scholarly journals Room-Temperature Phosphorescence and Low-Energy Induced Direct Triplet Excitation of Alq3 Engineered Crystals

2020 ◽  
Vol 11 (21) ◽  
pp. 9364-9370
Author(s):  
Hai Bi ◽  
Chanyuan Huo ◽  
Xiaoxian Song ◽  
Zhiqiang Li ◽  
Haoning Tang ◽  
...  
Keyword(s):  
Room Temperature ◽  
Low Energy ◽  
Room Temperature Phosphorescence ◽  
Triplet Excitation

Ultra-low energy joining: An invisible strong bond at room temperature

2019 ◽  
Vol 39 (16) ◽  
pp. 5358-5363 ◽  
Author(s):  
Daoyao Ke ◽  
Anna Jiang ◽  
Mattia Biesuz ◽  
Mauro Bortolotti ◽  
Gianmarco Taveri ◽  
...  
Keyword(s):  
Room Temperature ◽  
Low Energy ◽  
Strong Bond

Low energy boron implantation in silicon and room temperature diffusion

1998 ◽  
Vol 139 (1-4) ◽  
pp. 98-107 ◽  
Author(s):  
E.J.H Collart ◽  
K Weemers ◽  
N.E.B Cowern ◽  
J Politiek ◽  
P.H.L Bancken ◽  
...  
Keyword(s):  
Room Temperature ◽  
Low Energy ◽  
Temperature Diffusion ◽  
Boron Implantation

Epitaxial Growth of Diamond Films on Si(111) at Room Temperature by Mass-Selected Low-Energy C+ Beams

Science ◽  
1989 ◽  
Vol 243 (4894) ◽  
pp. 1047-1050 ◽  
Author(s):  
J. L. ROBERTSON ◽  
S. C. MOSS ◽  
Y. LIFSHITZ ◽  
S. R. KASI ◽  
J. W. RABALAIS ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Room Temperature ◽  
Diamond Films ◽  
Low Energy

Oxide formation on chromium metal surfaces by low-energy oxygen implantation at room temperature

2017 ◽  
Vol 636 ◽  
pp. 225-231 ◽  
Author(s):  
Robert Peter ◽  
Iva Saric ◽  
Ivna Kavre Piltaver ◽  
Ivana Jelovica Badovinac ◽  
Mladen Petravic
Keyword(s):  
Metal Surfaces ◽  
Room Temperature ◽  
Low Energy ◽  
Oxide Formation ◽  
Oxygen Implantation

Nitride Phosphors for Low Voltage Cathodoluminescence Devices

2000 ◽  
Vol 621 ◽  
Author(s):  
Hisashi Kanie ◽  
Takahiro Kawano ◽  
Kose Sugimoto ◽  
Ryoji Kawai
Keyword(s):  
Room Temperature ◽  
Anode Voltage ◽  
Low Voltage ◽  
Fundamental Absorption Edge ◽  
Low Energy ◽  
Photoluminescence Excitation ◽  
Body Color ◽  
Step Method ◽  
Luminance Efficiency ◽  
Blue Photoluminescence

ABSTRACTUndoped and Zn doped InGaN microcrystals were synthesized by a two-step method. The InGaN microcrystals have a wurtzite structure and brownish body color. The InGaN samples prepared at 900°C did not contain a metal In phase. The InGaN:Zn microcrystals showed blue photoluminescence (PL) at 77K different from that of GaN:Zn. Reflectivity and photoluminescence excitation (PLE) measurement showed that the fundamental absorption edge of the InGaN:Zn phosphors is 3.47 eV, which implies that the In content in the InGaN:Zn phosphors is less than 0.2%. GaN:Zn and InGaN:Zn showed a Zn related PLE peak at 3.34 eV. InGaN and InGaN:Zn showed an In related PLE peak at 3.14 eV. When the InGaN:Zn samples were selectively excited at 3.15 eV, an In-related emission band centered at 2.2 eV emerged. The InGaN:Zn phosphors mounted on vacuum fluorescent displays (VFDs) showed room-temperature blue cathodoluminescence (CL) and the CL peak shifted slightly toward the low energy compared to that of the GaN:Zn phosphors because of the superimposed In related band. The InGaN:Zn phosphors had a luminance of 50 cd/m2 and a luminance efficiency of 0.03 lm/W at an anode voltage of 50 V.

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