Improved near surface characterization of shallow arsenic distribution by SIMS depth profiling

2004 ◽  
Vol 231-232 ◽  
pp. 636-639 ◽  
Author(s):  
Temel H. Büyüklimanli ◽  
John W. Marino ◽  
Steven W. Novak
Keyword(s):  
Surface Characterization ◽  
Depth Profiling ◽  
Near Surface ◽  
Arsenic Distribution ◽  
Sims Depth Profiling

Surface Characterization of the Mechanism for Decreased Boiler Slagging via Fly Ash Surface Modification

1985 ◽  
Vol 65 ◽  
Author(s):  
Christopher J. Macey
Keyword(s):  
Fly Ash ◽  
Flue Gas ◽  
Surface Characterization ◽  
Depth Profiling ◽  
Pilot Scale ◽  
Pulverized Coal ◽  
Pulverized Coal Combustion ◽  
Utility Boilers ◽  
Combustion Experiment

ABSTRACTSlagging difficulties encountered in large, pulverized coal-fired utility boilers can be alleviated by using recently developed chemical conditioners designed to inhibit the agglomeration of molten fly ash particles. Slagging results from the impaction and accretion on the boiler interior surfaces of molten ash particles in the flue gas resulting from the combustion of coal. Electron Spectroscopy for chemical Analysis (ESCA) and ion sputtering depth profiling were utilized to examine the mechanism whereby a fuel conditioner containing copper oxychloride effectively reduced slag deposition rates during a pilot-scale, pulverized coal combustion experiment.

scholarly journals Fabrication and characterization of Si/SiO2/TiO2/ZnO heterostructures from sputtered and oxidized Ti-film

2017 ◽  
Vol 68 (7) ◽  
pp. 58-61
Author(s):  
Jaroslav Kováč ◽  
Martin Florovič ◽  
Andrej Vincze ◽  
Edmund Dobročka ◽  
Ivan Novotný ◽  
...  
Keyword(s):  
Rf Sputtering ◽  
Depth Profiling ◽  
Si Substrate ◽  
Electrical And Optical Properties ◽  
X Ray ◽  
Vis Spectroscopy ◽  
Fabrication And Characterization ◽  
Sims Depth Profiling ◽  
Structure Properties

AbstractThe present work reports the fabrication of p-Si/SiO2/TiO2and p-Si/SiO2/TiO2/ZnO heterostructures deposited by RF sputtering on p-Si substrate. The structural properties of the heterostructures were characterized by X-ray reflectivity and SIMS depth profiling. The electrical and optical properties of the heterostructures were investigated byI − V, C-V measurements and VIS spectroscopy, respectively. The measurements reveal thatI − Vcharacteristics in dark show semiconductor-insulator-semiconductor (SIS) structure properties. TheI − Vcharacteristics under illumination exhibit changes with significant increase of photocurrent due to photoassisted tunnelling and injection through SiO2/TiO2interlayer.

Characterization of polymer solar cells by TOF-SIMS depth profiling

2003 ◽  
Vol 203-204 ◽  
pp. 547-550 ◽  
Author(s):  
C.W.T. Bulle-Lieuwma ◽  
W.J.H. van Gennip ◽  
J.K.J. van Duren ◽  
P. Jonkheijm ◽  
R.A.J. Janssen ◽  
...  
Keyword(s):  
Solar Cells ◽  
Polymer Solar Cells ◽  
Depth Profiling ◽  
Tof Sims ◽  
Sims Depth Profiling

Seismic Reflection for Near-surface Characterization of Earthen Dams and Dikes: Upstream, Downstream

2015 ◽  
Author(s):  
Richard D. Miller ◽  
Richard D. Markiewicz ◽  
Julian Ivanov ◽  
Shelby Peterie ◽  
Jianghai Xia
Keyword(s):  
Seismic Reflection ◽  
Surface Characterization ◽  
Near Surface ◽  
Earthen Dams

Characterization of polymeric light emitting diodes by SIMS depth profiling analysis

1995 ◽  
Vol 353 (5-8) ◽  
pp. 642-646 ◽  
Author(s):  
G. Sauer ◽  
M. Kilo ◽  
M. Hund ◽  
A. Wokaun ◽  
S. Karg ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Depth Profiling ◽  
Light Emitting ◽  
Profiling Analysis ◽  
Sims Depth Profiling

Near Surface Characterization of an Impinging Elliptic Jet Array

1999 ◽  
Vol 121 (2) ◽  
pp. 384-390 ◽  
Author(s):  
Simona C. Arjocu ◽  
James A. Liburdy
Keyword(s):  
Surface Characterization ◽  
Large Scale ◽  
Near Surface ◽  
Large Scale Structures ◽  
Aspect Ratios ◽  
Naturally Occurring ◽  
Turbulence Velocity ◽  
Axis Switching ◽  
Jet Array

In this study naturally occurring large-scale structures and some turbulence characteristics within an impinging jet array are investigated. The dynamics of a three-by-three elliptic jet array are analyzed relative to the flow structures within the array. With applications to electronic component cooling, low Reynolds number conditions, Re = 300 to 1500, are presented. Two jet aspect ratios are used, 2 and 3, with identical jet hydraulic diameters and jet-to-jet space. The effects of impinging distance are studied in the range of one to six jet hydraulic diameters. Flow visualization and PIV are used for the identification of structures and quantitative analysis. These results are used to evaluate the integrated surface layer vorticity, Γ*, which is shown to depend on the jet aspect ratio and impingement distance. Also, a transport coefficient is presented, based on a turbulence velocity and length scales. This coefficient is shown to experience a maximum value versus impingement distance that coincides with the location of axis switching.

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