The effect of applied dc bias voltage on the properties of a-C:H films prepared in a dual dc–rf plasma system

2004 ◽  
Vol 227 (1-4) ◽  
pp. 364-372 ◽  
Author(s):  
H.X Li ◽  
T Xu ◽  
J.M Chen ◽  
H.D Zhou ◽  
H.W Liu
Keyword(s):  
1997 ◽  
Vol 48 (3) ◽  
pp. 317-323
Author(s):  
Takayasu SATO ◽  
Isao NOUCHI ◽  
Masato SAHARA ◽  
Shigeru ITO ◽  
Kazuo AKASHI

1991 ◽  
Vol 70 (10) ◽  
pp. 5374-5379 ◽  
Author(s):  
Gehan A. J. Amaratunga ◽  
S. Ravi P. Silva ◽  
David R. McKenzie

Energies ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 638
Author(s):  
Sanam SaeidNahaei ◽  
Hyun-Jun Jo ◽  
Sang Jo Lee ◽  
Jong Su Kim ◽  
Sang Jun Lee ◽  
...  

For examining the carrier movements through tunnel junction, electrically and optically-biased photoreflectance spectroscopy (EBPR and OBPR) were used to investigate the internal electric field in the InGaP/GaAs dual junction solar cell at room temperature. At InGaP and GaAs, the strength of p-n junction electric fields (Fpn) was perturbed by the external DC bias voltage and CW light intensity for EBPR and OBPR experiments, respectively. Moreover, the Fpn was evaluated using the Fast Fourier Transform (FFT) of the Franz—Keldysh oscillation from PR spectra. In the EBPR, the electric field decreased by increasing the DC bias voltage, which also decreased the potential barrier. In OBPR, when incident CW light is absorbed by the top cell, the decrement of the Fpn in the GaAs cell indicates that the photogenerated carriers are accumulated near the p-n junction. Photogenerated carriers in InGaP can pass through the tunnel junction, and the PR results show the contribution of the modification of the electric field by the photogenerated carriers in each cell. We suggest that PR spectroscopy with optical-bias and electrical-bias could be analyzed using the information of the photogenerated carrier passed through the tunnel junction.


2019 ◽  
Vol 45 (9) ◽  
pp. 11989-12000 ◽  
Author(s):  
Y. Slimani ◽  
B. Unal ◽  
E. Hannachi ◽  
A. Selmi ◽  
M.A. Almessiere ◽  
...  

2015 ◽  
Vol 9 (7) ◽  
pp. 80 ◽  
Author(s):  
Reni Desmiarti ◽  
Ariadi Hazmi ◽  
Yenni Trianda

A radio-frequency plasma system (RF) was used to investigate the removal of microorganisms from water.Plasma generated by RF radiation can produce active compounds (H•, •OH, H2O2, O3, etc.) that have a highoxidation potential and can kill microorganisms present in water (fecal coliforms and total coliforms). Thefrequency of the plasma system was set to 3.0, 3.3 and 3.7 MHz and applied to river water for 60 minutes. Theresults show that in all runs, the pH of the water produced was in the range from 7.4 to 7.9. The removalefficiencies of fecal coliforms achieved were between 83.75 and 95% and were higher than the removalefficiencies of total coliforms, which were between 82.61 and 93.48%. Meanwhile, the death rate (kD) of fecalcoliforms wasfaster than that of total coliforms. Therefore, the removal of total coliforms is the key to removingmicroorganisms fromwater. RF plasma treatment can be used for treatment of drinking water to decreasemicroorganisms.


2020 ◽  
Vol 2020 ◽  
pp. 1-15
Author(s):  
Shuying Hao ◽  
Yulun Zhu ◽  
Yuhao Song ◽  
Qichang Zhang ◽  
Jingjing Feng ◽  
...  

The electrostatic force nonlinearity caused by fringe effects of the microscale comb will affect the dynamic performance of the micromechanical vibrating gyroscopes (MVGs). In order to reveal the influence mechanism, a class of four-degree-of-freedom (4-DOF) electrostatically driven MVG is considered. The influence of DC bias voltage and comb spacing on the nonlinearity of electrostatic force and the dynamic response of the MVG by using multiple time scales method and numerical simulation are discussed. The results indicate that the electrostatic force nonlinearity causes the system to show stiffness softening. The softening characteristics of the electrostatic force cause the offset of the resonance frequency and a decrease in sensitivity. Although the electrostatic nonlinearity has a great influence on the dynamic behaviour, its influence can be avoided by the reasonable design of the comb spacing and DC bias voltage. There exists a critical value for comb spacing and DC bias voltage. In this paper, determining the critical values is demonstrated by nonlinear dynamics analysis. The results can be supported by the finite element analysis and numerical simulation.


2020 ◽  
Vol 54 (11) ◽  
pp. 1249-1254
Author(s):  
Sukrant Dhawan ◽  
Abhay Vidwans ◽  
Girish Sharma ◽  
Nabiel Hilmy Abuyazid ◽  
R Mohan Sankaran ◽  
...  

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