Micromachining of large area amorphous carbon membranes prepared by filtered cathodic vacuum arc technique

2004 ◽  
Vol 223 (4) ◽  
pp. 286-293 ◽  
Author(s):  
Yu Liujiang ◽  
B.K Tay ◽  
D Sheeja ◽  
Y.Q Fu ◽  
J.M Miao
Keyword(s):  
Amorphous Carbon ◽  
Vacuum Arc ◽  
Large Area ◽  
Carbon Membranes ◽  
Filtered Cathodic Vacuum Arc

scholarly journals Thermal stability and diffusion characteristics of ultrathin amorphous carbon films grown on crystalline and nitrogenated silicon substrates by filtered cathodic vacuum arc deposition

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Shengxi Wang ◽  
Anurag Roy ◽  
Kyriakos Komvopoulos
Keyword(s):  
Thermal Stability ◽  
Amorphous Carbon ◽  
Silicon Substrate ◽  
Elevated Temperatures ◽  
Carbon Films ◽  
Vacuum Arc ◽  
Cross Sectional ◽  
Prolonged Heating ◽  
Filtered Cathodic Vacuum Arc ◽  
Thermal Stability Of

AbstractAmorphous carbon (a-C) films are widely used as protective overcoats in many technology sectors, principally due to their excellent thermophysical properties and chemical inertness. The growth and thermal stability of sub-5-nm-thick a-C films synthesized by filtered cathodic vacuum arc on pure (crystalline) and nitrogenated (amorphous) silicon substrate surfaces were investigated in this study. Samples of a-C/Si and a-C/SiNx/Si stacks were thermally annealed for various durations and subsequently characterized by high-resolution transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS). The TEM images confirmed the continuity and uniformity of the a-C films and the 5-nm-thick SiNx underlayer formed by silicon nitrogenation using radio-frequency sputtering. The EELS analysis of cross-sectional samples revealed the thermal stability of the a-C films and the efficacy of the SiNx underlayer to prevent carbon migration into the silicon substrate, even after prolonged heating. The obtained results provide insight into the important attributes of an underlayer in heated multilayered media for preventing elemental intermixing with the substrate, while preserving the structural stability of the a-C film at the stack surface. An important contribution of this investigation is the establishment of an experimental framework for accurately assessing the thermal stability and elemental diffusion in layered microstructures exposed to elevated temperatures.

Etching behaviour of pure and metal containing amorphous carbon films prepared using filtered cathodic vacuum arc technique

2002 ◽  
Vol 195 (1-4) ◽  
pp. 107-116 ◽  
Author(s):  
L.J Yu ◽  
D Sheeja ◽  
B.K Tay ◽  
Daniel H.C Chua ◽  
W.I Milne ◽  
...  
Keyword(s):  
Amorphous Carbon ◽  
Carbon Films ◽  
Vacuum Arc ◽  
Amorphous Carbon Films ◽  
Filtered Cathodic Vacuum Arc

FCVA-Synthesized Tetrahedral Amorphous Carbon Films for Biomedical Applications

2007 ◽  
Vol 336-338 ◽  
pp. 1577-1580 ◽  
Author(s):  
Chuan Lin Zheng ◽  
Wu Bao Yang ◽  
X. Chang
Keyword(s):  
Amorphous Carbon ◽  
Biomedical Applications ◽  
Pure Titanium ◽  
Carbon Films ◽  
Vacuum Arc ◽  
Negative Bias Voltage ◽  
Tetrahedral Amorphous Carbon ◽  
In Vitro Measurements ◽  
Filtered Cathodic Vacuum Arc

Tetrahedral amorphous carbon (ta-C) films were deposited onto Si(100) wafers by using filtered cathodic vacuum arc technique (FCVA). The influence of the negative bias voltage applied to substrates on film structures was studied by Raman spectroscopy, X-ray photoemission spectroscopy (XPS). The ta-C films showed maximal sp3 fractions 87%, the hardness and elastic modulus of the ta-C film is 72 and 480 GPa, respectively. In vitro measurements of contact angle and platelet adhesion were applied to evaluate the biocompatibility of the ta-C films in comparison with that of NiTi, 316L and pure titanium. The results show that the ta-C films have hydrophobicity and exhibit better hemocompatibility which are very suitable for biomedical applications.

Field Emission from Tetrahedrally Bonded Amorphous Carbon

1997 ◽  
Vol 471 ◽  
Author(s):  
W. I. Milne ◽  
J. Robertson ◽  
B. S. Satyanarayanan ◽  
A. Hart
Keyword(s):  
Field Emission ◽  
Amorphous Carbon ◽  
Applied Field ◽  
Vacuum Arc ◽  
Threshold Field ◽  
Nitrogen Doped ◽  
Bonding Ratio ◽  
Current Densities ◽  
Filtered Cathodic Vacuum Arc ◽  
Tetrahedrally Bonded

ABSTRACTA series of tetrahedrally bonded carbon (ta-C) films have been produced using a Filtered Cathodic Vacuum Arc System. The threshold field and current densities achievable have been investigated as a function of sp3/sp2 bonding ratio and nitrogen content. Typical undoped ta-C films have a threshold field of 15–20V/μm and optimally nitrogen doped films exhibit threshold fields as low as ∼ 5 V/μm. Current densities of typically 10-4 A/cm2 at an applied field of 20V/micron were also obtained.

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