Photo-assisted degradation of 2,4,5-trichlorophenoxyacetic acid by Fe(II)-catalyzed activation of Oxone process: The role of UV irradiation, reaction mechanism and mineralization

2012 ◽  
Vol 123-124 ◽  
pp. 151-161 ◽  
Author(s):  
Y.R. Wang ◽  
W. Chu
Author(s):  
Lars Mohrhusen ◽  
Jessica Kräuter ◽  
Katharina Al-Shamery

The photochemical conversion of organic compounds on tailored transition metal oxide surfaces by (UV) irradiation has found wide applications ranging from the production of chemicals to the degradation of organic...


2001 ◽  
Vol 14 (2) ◽  
pp. 202-210 ◽  
Author(s):  
Catherine Moali ◽  
Jean-Luc Boucher ◽  
Axelle Renodon-Corniere ◽  
Dennis J. Stuehr ◽  
Daniel Mansuy

2008 ◽  
Vol 62 (1) ◽  
pp. 11-16 ◽  
Author(s):  
Nishtar Nishad Fathima ◽  
Raju Suresh ◽  
Jonnalagadda Raghava Rao ◽  
Balachandran Unni Nair ◽  
Thirumalachari Ramasami
Keyword(s):  

1996 ◽  
Vol 159 (2) ◽  
pp. 418-426 ◽  
Author(s):  
Dezheng Wang ◽  
Olivier Dewaele ◽  
Ann M.De Groote ◽  
Gilbert F. Froment

1989 ◽  
Vol 149 ◽  
Author(s):  
S. Veprek ◽  
M. Heintze ◽  
R. Bayer ◽  
N. Jurčik-Rajman

ABSTRACTWe present new results of kinetic studies of the deposition of high quality a-Si:H which strongly support the reaction mechanism suggested in our earlier papers: 1. SiH4 → SiH2; 2. SiH2 + SiS4 → Si2H6 (SiH2 + Si2H6 → Si3H6); 3. Si2H6 → 2a-Si:H (Si3H8 → 3a-Si:H). The “SiH3 mechanism”, as promoted by several workers, is in contradiction with these experimental facts.The di- and trisilane, which have a much higher reactive sticking coefficient than monosilane, play the role of reactive intermediates which facilitate the heterogeneous decomposition of silicon carrying species at the surface of the growing film. The values of the reactive sticking coefficient of Si2H6 and Si3H8 depend on the surface coverage by chemisorbed hydrogen; they increase with decreasing surface coverage. Under the conditions of the growth of high quality a-Si:H films the reactive sticking coefficient of disilane amounts to 10−4 to 10−2 which is in a good agreement with recent data of other authors.The rate determining step of the growth of high quality a-Si:H films is the desorption of hydrogen from the surface of the growing film. This can be strongly enhanced by ion bombardment at impact energy of <100 eV. In this way, homogeneous, good quality films were deposited at rates up to 1800 Angströms/min, and there is a well justified hope that this rate can be further increased.


RSC Advances ◽  
2018 ◽  
Vol 8 (3) ◽  
pp. 1427-1435 ◽  
Author(s):  
Zhigang Yi ◽  
Juan Wang ◽  
Qiong Tang ◽  
Tao Jiang

The role of reactive species in SMN photolysis and the effects of dissolved substances on SMN photochemical behavior.


RSC Advances ◽  
2019 ◽  
Vol 9 (46) ◽  
pp. 27125-27135 ◽  
Author(s):  
Elon F. Freitas ◽  
Roberto Y. Souza ◽  
Saulo T. A. Passos ◽  
José A. Dias ◽  
Silvia C. L. Dias ◽  
...  

Heteropolyacids and ionic liquid effect allowed tuning of the Biginelli reaction mechanism and synthesis of 3,4-dihydropyrimidin-2(1H)-one/thione derivatives in an efficient, recyclable fashion. The role of acidic strength and supported heteropolyacid is disclosed.


2020 ◽  
Vol 11 (1) ◽  
pp. 257-263 ◽  
Author(s):  
Gianluca Casotti ◽  
Gianluca Ciancaleoni ◽  
Filippo Lipparini ◽  
Chiara Nieri ◽  
Anna Iuliano

The reaction mechanism of a new conjugate addition reaction of organozinc halides to enones is disclosed by a combined experimental/computational study.


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