Near infrared emission spectroscopy for rapid compositional analysis of Portland cements

2018 ◽  
Vol 1024 ◽  
pp. 136-144 ◽  
Author(s):  
Jicarla Portela Rebouças ◽  
Jarbas José Rodrigues Rohwedder ◽  
Celio Pasquini
Keyword(s):  
Emission Spectroscopy ◽  
Near Infrared ◽  
Compositional Analysis ◽  
Infrared Emission ◽  
Portland Cements ◽  
Infrared Emission Spectroscopy ◽  
Near Infrared Emission

scholarly journals Near infrared emission spectroscopy induced by ultrasonic irradiation

2006 ◽  
Vol 13 (5) ◽  
pp. 438-442 ◽  
Author(s):  
Sivanildo Silva Borges ◽  
Mauro Korn ◽  
Fabiano Barbieri Gonzaga ◽  
Celio Pasquini
Keyword(s):  
Ultrasonic Irradiation ◽  
Emission Spectroscopy ◽  
Near Infrared ◽  
Infrared Emission ◽  
Infrared Emission Spectroscopy ◽  
Near Infrared Emission

scholarly journals GROUND-BASED NEAR-INFRARED EMISSION SPECTROSCOPY OF HD 189733B

2011 ◽  
Vol 744 (1) ◽  
pp. 35 ◽  
Author(s):  
I. P. Waldmann ◽  
G. Tinetti ◽  
P. Drossart ◽  
M. R. Swain ◽  
P. Deroo ◽  
...  
Keyword(s):  
Emission Spectroscopy ◽  
Near Infrared ◽  
Infrared Emission ◽  
Infrared Emission Spectroscopy ◽  
Near Infrared Emission

A fast method for determination of surface area of zeolite-based catalysts and zeolites using near infrared emission spectroscopy

2019 ◽  
Vol 11 (21) ◽  
pp. 2819-2825
Author(s):  
Jicarla Portela Rebouças ◽  
Jarbas José Rodrigues Rohwedder ◽  
Celio Pasquini
Keyword(s):  
Surface Area ◽  
Emission Spectroscopy ◽  
Near Infrared ◽  
Infrared Emission ◽  
Spectral Information ◽  
Fast Method ◽  
Infrared Emission Spectroscopy ◽  
Near Infrared Emission

A new, fast and reagent-free method for determination of the surface area of zeolite-based catalysts and zeolites using direct spectral information from near infrared emission spectroscopy and chemometrics is described.

Infrared Emission Spectroscopy as a Reliability Tool

1999 ◽  
Author(s):  
Q. Kim ◽  
S. Kayali
Keyword(s):  
Spatial Resolution ◽  
Emission Spectroscopy ◽  
Hot Spot ◽  
Cost Effective ◽  
Infrared Emission ◽  
Test System ◽  
Operating Conditions ◽  
Yield Enhancement ◽  
Infrared Emission Spectroscopy ◽  
Channel Temperature

Abstract In this paper, we report on a non-destructive technique, based on IR emission spectroscopy, for measuring the temperature of a hot spot in the gate channel of a GaAs metal/semiconductor field effect transistor (MESFET). A submicron-size He-Ne laser provides the local excitation of the gate channel and the emitted photons are collected by a spectrophotometer. Given the state of our experimental test system, we estimate a spectral resolution of approximately 0.1 Angstroms and a spatial resolution of approximately 0.9 μm, which is up to 100 times finer spatial resolution than can be obtained using the best available passive IR systems. The temperature resolution (<0.02 K/μm in our case) is dependent upon the spectrometer used and can be further improved. This novel technique can be used to estimate device lifetimes for critical applications and measure the channel temperature of devices under actual operating conditions. Another potential use is cost-effective prescreening for determining the 'hot spot' channel temperature of devices under normal operating conditions, which can further improve device design, yield enhancement, and reliable operation. Results are shown for both a powered and unpowered MESFET, demonstrating the strength of our infrared emission spectroscopy technique as a reliability tool.

scholarly journals Amphiprotism-Coupled Near-Infrared Emission in Extended Pyrazinacenes Containing Seven Linearly Fused Pyrazine Units

2019 ◽  
Vol 141 (50) ◽  
pp. 19570-19574 ◽  
Author(s):  
Gary J. Richards ◽  
Aël Cador ◽  
Shinji Yamada ◽  
Anna Middleton ◽  
Whitney A. Webre ◽  
...  
Keyword(s):  
Near Infrared ◽  
Infrared Emission ◽  
Near Infrared Emission
Sign in / Sign up

Export Citation Format

Share Document