ИССЛЕДОВАНИЕ ПРОЦЕССА ГЛУБОКОГО ТРАВЛЕНИЯ КРЕМНИЯ С МИНИМАЛЬНОЙ ШЕРОХОВАТОСТЬЮ СТЕНОК И ДНА СТРУКТУР

2020 ◽  
Vol 96 (3s) ◽  
pp. 668-675
Author(s):  
Я.А. Мирошкин
Keyword(s):  
Analytical Model ◽  
Phenomenological Description ◽  
Silicon Etching ◽  
Anisotropic Silicon Etching

Данная работа посвящена исследованию процессов глубокого анизотропного травления кремния. В качестве предложенных методов были проанализированы два подхода - Bosch и Cryo. Представлено феноменологическое описание вышеупомянутых методов, проведен анализ эксперимента по криогенному травлению кремния, полученный на базе ФТИАН, также предложена аналитическая модель Cryo-процесса. This work is devoted to the study of the processes of deep anisotropic silicon etching. Two approaches (Bosch and Cryo) have been analyzed as proposed methods. The phenomenological description of the above mentioned methods has been presented, the analysis of the experiment on cryogenic etching of silicon obtained on the basis of FTIAN has been carried out, as well as an analytical model of Cryo process has been proposed.

Feasibility to Fabricate the 45° Slant with Anisotropic Silicon Etching in NaOH Solution

2012 ◽  
Vol 503-504 ◽  
pp. 615-619 ◽  
Author(s):  
Alonggot Limcharoen ◽  
Chupong Pakpum ◽  
Pichet Limsuwan
Keyword(s):  
Data Storage ◽  
Etch Rate ◽  
Silicon Etching ◽  
Naoh Solution ◽  
Conventional Photolithography ◽  
Sio2 Mask ◽  
P Type ◽  
Anisotropic Silicon Etching ◽  
Wet Etch ◽  
Laser Light Source

The experiments to study the feasibility to fabricate the 45 slant on p-type (100)-oriented silicon wafer were done. The various mask shapes, rectangular, cross, circle and boomerang, were patterned on the SiO2 mask by utilizing the conventional photolithography and dry etching process for investigating the anisotropic wet etch characteristic. The edge of masks were align in two crystal direction, 110 and 100 that is allowable to get a better understanding about the crystal orientation and the angle between planes in a crystal system. The very low etch rate,  50 nm/min, process regime was selected to fabricate the 45 slant with the concept is the lowest of an overall etch rate in the system to reach the level that is possible to detect the (110) plane. The etch recipe can be used for the next development work to built a housing of the laser light source for applying in a data storage technology.

High-Rate Anisotropic Silicon Etching with the Expanding Thermal Plasma Technique

2019 ◽  
Vol 3 (10) ◽  
pp. 291-298 ◽  
Author(s):  
Michiel A. Blauw ◽  
Peter Van Lankvelt ◽  
F. Roozeboom ◽  
Erwin Kessels ◽  
Richard van de Sanden
Keyword(s):  
Thermal Plasma ◽  
High Rate ◽  
Silicon Etching ◽  
Plasma Technique ◽  
Anisotropic Silicon Etching

Ultra-Fast Anisotropic Silicon Etching with Resulting Mirror Surfaces in Ammonia Solutions

2001 ◽  
pp. 608-611 ◽  
Author(s):  
Christophe Mihalcea ◽  
Sommawan Khumpuang ◽  
Masashi Kuwahara ◽  
Zhen Yang ◽  
Ryutaro Maeda ◽  
...  
Keyword(s):  
Silicon Etching ◽  
Anisotropic Silicon Etching

A New Explanation of Mask-corner Undercut in Anisotropic Silicon Etching: Saddle Point in Etching Rate Diagram

2001 ◽  
pp. 648-651 ◽  
Author(s):  
Mitsuhiro Shikida ◽  
Ken-ichi Nanbara ◽  
Tohru Koizumi ◽  
Hikaru Sasaki ◽  
Michiaki Odagaki ◽  
...  
Keyword(s):  
Saddle Point ◽  
Etching Rate ◽  
Silicon Etching ◽  
Anisotropic Silicon Etching

Towards wet anisotropic silicon etching of perfect pyramidal pits

2007 ◽  
Vol 84 (5-8) ◽  
pp. 1419-1422 ◽  
Author(s):  
Edin Sarajlic ◽  
Christophe Yamahata ◽  
Hiroyuki Fujita
Keyword(s):  
Silicon Etching ◽  
Anisotropic Silicon Etching

High-Rate Anisotropic Silicon Etching with the Expanding Thermal Plasma Technique

2007 ◽  
Vol 10 (10) ◽  
pp. H309 ◽  
Author(s):  
M. A. Blauw ◽  
P. J. W. van Lankvelt ◽  
F. Roozeboom ◽  
M. C. M. van de Sanden ◽  
W. M. M. Kessels
Keyword(s):  
Thermal Plasma ◽  
High Rate ◽  
Silicon Etching ◽  
Plasma Technique ◽  
Anisotropic Silicon Etching

Morphologic control of wet anisotropic silicon etching

2016 ◽  
Vol 24 (2) ◽  
pp. 350-357
Author(s):  
姚明秋 YAO Ming-qiu ◽  
唐 彬 TANG Bin ◽  
苏 伟 SU Wei
Keyword(s):  
Silicon Etching ◽  
Anisotropic Silicon Etching
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