Influence of current density on the physical properties of electroplated NiFeP nano thin films for MEMS applications

2021 ◽  
Author(s):  
A. Kalaivani ◽  
B. Mohanbabu ◽  
R. Kannan ◽  
G. Senguttuvan ◽  
V. Sivakumar ◽  
...  
Keyword(s):  
Thin Films ◽  
Physical Properties ◽  
Current Density

Electrical and Physical Properties of (K0.5Na0.5)NbO3 Ferroelectric Thin Films

2014 ◽  
Vol 602-603 ◽  
pp. 800-803
Author(s):  
Min Chang Kuan ◽  
Fann Wei Yang ◽  
Chien Min Cheng ◽  
Kai Huang Chen ◽  
Jian Tz Lee
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Physical Properties ◽  
Leakage Current ◽  
Oxygen Concentration ◽  
Leakage Current Density ◽  
Current Density ◽  
Root Mean Square Roughness ◽  
Excess Oxygen ◽  
Average Grain Size

Lead-free potassium sodium niobate ceramic thin films were synthesized using rf magnetron sputtering technology for MFIS structures. The optimal sputtering parameters of the as-deposited KNN thin films for depositing times of 1h were obtained. Regarding the measured physical properties, the micro-structure and thickness of as-deposited KNN thin films for different oxygen concentration were obtained and compared by XRD patterns and SEM images. The surface roughness of KNN thin film was also observed by AFM morphology. The average grain size and root mean square roughness were 250 and 7.04 nm, respectively. For KNN thin films in the MFIS structure, the capacitance and leakage current density were 280 pF and 10-8A/cm2, respectively. We investigated that the leakage current density and the memory window increased, the capacitance critically increased as the oxygen concentration increased from 0 to 40%. However, the excess oxygen concentration process was decreased the electrical and physical of as-deposited KNN thin film. The effect of oxygen concentration on the physical and electrical characteristics of KNN thin films was investigated and determined.

The Electrical and Physical Properties of (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3 Thin Films under Conventional Annealing Process

2010 ◽  
Vol 434-435 ◽  
pp. 271-274
Author(s):  
Kai Huang Chen ◽  
Cheng Fu Yang ◽  
Chien Chen Diao
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Physical Properties ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
X Ray Diffraction ◽  
Maximum Dielectric Constant ◽  
Xrd Patterns ◽  
Conventional Annealing

In this study, conventional furnace annealing (CFA) is used as the post-treated process, the effects of annealing temperatures on the crystallization and microstructure of (Ba0.7Sr0.3)(Ti0.9 Zr0.1)O3 (BSTZ) thin films will be developed, and the further influences on the electrical properties of BSTZ thin films are also investigated. A previous study made in our laboratory had shown that the dielectric constant and leakage current density of BSTZ thin film with 640 nm thickness are 192 and 10-6 A/cm2 under the frequency of 100 KHz, respectively. However, the maximum dielectric constant and minimum leakage current density of BSTZ thin films under CFA process are 420 (annealed at 800oC) and 10-8 A/cm2 (700oC), respectively. Besides, the X-ray diffraction (XRD) patterns and the SEM morphology show that crystalline features and grain size of BSTZ thin films increase with the increase of CFA-treated temperatures. These experiment results suggest that a strong correlation exhibits that the physical properties will influence the dielectric properties and nucleation features of BSTZ thin films.

Electrical and Physical Properties of Sodium Potassium Niobates Thin Films Prepared by rf Magnetron Sputtering Technology

2011 ◽  
Vol 239-242 ◽  
pp. 532-535
Author(s):  
Chien Min Cheng ◽  
Shih Fang Chen ◽  
Jen Hwan Tsai ◽  
Kai Huang Chen ◽  
Hsiu Hsien Su
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Physical Properties ◽  
Leakage Current ◽  
Oxygen Concentration ◽  
Leakage Current Density ◽  
Current Density ◽  
Rf Magnetron Sputtering ◽  
Average Grain Size

Lead-free potassium sodium niobate ceramic thin films were synthesized using rf magnetron sputtering technology for MFIS structures. The optimal sputtering parameters of the as-deposited KNN thin films for depositing times of 1h were obtained. Regarding the measured physical properties, the micro-structure and thickness of as-deposited KNN thin films for different oxygen concentration were obtained and compared by XRD patterns and SEM images. The surface roughness of KNN thin film was also observed by AFM morphology. The average grain size and root mean square roughness were 250 and 7.04 nm, respectively. For KNN thin films in the MFIS structure, the capacitance and leakage current density were 280 pF and 10-8A/cm2, respectively. We investigated that the leakage current density and the memory window increased, the capacitance critically increased as the oxygen concentration increased from 0 to 40%. However, the excess oxygen concentration process was decreased the electrical and physical of as-deposited KNN thin film. The effect of oxygen concentration on the physical and electrical characteristics of KNN thin films was investigated and determined.

Microstructural characterization of YBa2Cu3O7-x thin films formed by metalorganic CVD

1991 ◽  
Vol 49 ◽  
pp. 1080-1081
Author(s):  
P. Lu ◽  
W. Huang ◽  
C.S. Chern ◽  
Y.Q. Li ◽  
J. Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Film Growth ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Ion Milling ◽  
Conventional Grinding

The YBa2Cu3O7-x thin films formed by metalorganic chemical vapor deposition(MOCVD) have been reported to have excellent superconducting properties including a sharp zero resistance transition temperature (Tc) of 89 K and a high critical current density of 2.3x106 A/cm2 or higher. The origin of the high critical current in the thin film compared to bulk materials is attributed to its structural properties such as orientation, grain boundaries and defects on the scale of the coherent length. In this report, we present microstructural aspects of the thin films deposited on the (100) LaAlO3 substrate, which process the highest critical current density.Details of the thin film growth process have been reported elsewhere. The thin films were examined in both planar and cross-section view by electron microscopy. TEM sample preparation was carried out using conventional grinding, dimpling and ion milling techniques. Special care was taken to avoid exposure of the thin films to water during the preparation processes.

Effects of Tin Doping on the Physical Properties of Thermally Deposited Sb2S3 Thin Films

2013 ◽  
Vol 9 (4) ◽  
pp. 532-535
Author(s):  
N. Ali ◽  
W. A. A. Syed ◽  
I. Murtaza ◽  
S. T. Hussain ◽  
N. Ahmad ◽  
...  
Keyword(s):  
Thin Films ◽  
Physical Properties

Physical properties of graphene oxide GO-doped ZnO thin films for optoelectronic application

2021 ◽  
Vol 127 (2) ◽  
Author(s):  
M. Karyaoui ◽  
D. Ben Jemia ◽  
M. Daoudi ◽  
A. Bardaoui ◽  
A. Boukhachem ◽  
...  
Keyword(s):  
Thin Films ◽  
Graphene Oxide ◽  
Physical Properties ◽  
Zno Thin Films ◽  
Optoelectronic Application ◽  
Doped Zno

Effects of surface damage on critical current density in MgB2 thin films

2021 ◽  
Vol 22 ◽  
pp. 14-19
Author(s):  
Soon-Gil Jung ◽  
Duong Pham ◽  
Jung Min Lee ◽  
Yoonseok Han ◽  
Won Nam Kang ◽  
...  
Keyword(s):  
Thin Films ◽  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Surface Damage ◽  
Mgb2 Thin Films
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