scholarly journals The scale dependent nuclear effects in parton distributions for practical applications

1999 ◽  
Vol 9 (1) ◽  
pp. 61 ◽  
Author(s):  
K.J. Eskola ◽  
V.J. Kolhinen ◽  
C.A. Salgado
Keyword(s):  
Parton Distributions ◽  
Practical Applications ◽  
Nuclear Effects

scholarly journals Azimuthal Asymmetries of the Drell-Yan Process in pA Collisions

2016 ◽  
Vol 40 ◽  
pp. 1660059
Author(s):  
Jian-Hua Gao
Keyword(s):  
Transverse Momentum ◽  
Quark Distribution ◽  
Lepton Pair ◽  
Parton Distributions ◽  
Transverse Momentum Dependent ◽  
Gauge Link ◽  
Factorization Formalism ◽  
Azimuthal Asymmetries ◽  
Nuclear Effects

We discuss the azimuthal asymmetries of the Drell-Yan process in nucleon-nucleus collisions at the low transverse momentum of the lepton pair. Within the transverse-momentum-dependent (TMD) factorization formalism, the nuclear effects of these azimuthal asymmetries can be from the gauge link of the TMD quark distribution. We estimate all these nuclear effects within the assumption that all the TMD parton distributions or correlations are in Gaussian forms.

scholarly journals Nuclear Parton Distributions in the DGLAP Approach

2003 ◽  
Vol 12 (02) ◽  
pp. 177-195
Author(s):  
K. J. Eskola ◽  
H. Honkanen ◽  
V. J. Kolhinen ◽  
P. V. Ruuskanen ◽  
C. A. Salgado
Keyword(s):  
Perturbative Qcd ◽  
Parton Distributions ◽  
Nucleus Scattering ◽  
Nuclear Effects

Determination of the nuclear parton distributions within the framework of perturbative QCD, the DGLAP equations in particulars, is discussed. Scale and flavour dependent nuclear effects in the parton distributions are compared with the scale and flavour independent parametrizations of HIJING and of the Hard Probe Collaboration. A comparison with the data from deep inelastic lepton-nucleus scattering and the Drell–Yan process in proton-nucleus collisions is shown.

Ion Beam Induced Interfacial Reactions in Molybdenum Thin Films on Silicon

1981 ◽  
Vol 39 ◽  
pp. 162-163
Author(s):  
L. J. Chen ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Interfacial Reactions ◽  
Practical Applications ◽  
Microelectronic Devices ◽  
Recent Emergence ◽  
Chemical Vapor Deposited ◽  
Atomic Mixing ◽  
Silicon Interface ◽  
Kinetics Of

When an energetic ion penetrates through an interface between a thin film (of species A) and a substrate (of species B), ion induced atomic mixing may result in an intermixed region (which contains A and B) near the interface. Most ion beam mixing experiments have been directed toward metal-silicon systems, silicide phases are generally obtained, and they are the same as those formed by thermal treatment.Recent emergence of silicide compound as contact material in silicon microelectronic devices is mainly due to the superiority of the silicide-silicon interface in terms of uniformity and thermal stability. It is of great interest to understand the kinetics of the interfacial reactions to provide insights into the nature of ion beam-solid interactions as well as to explore its practical applications in device technology.About 500 Å thick molybdenum was chemical vapor deposited in hydrogen ambient on (001) n-type silicon wafer with substrate temperature maintained at 650-700°C. Samples were supplied by D. M. Brown of General Electric Research & Development Laboratory, Schenectady, NY.

1250-kilovolt scanning transmission electron microscope

1984 ◽  
Vol 42 ◽  
pp. 624-625
Author(s):  
T. Imura ◽  
S. Maruse ◽  
K. Mihama ◽  
M. Iseki ◽  
M. Hibino ◽  
...  
Keyword(s):  
High Voltage ◽  
Electron Probe ◽  
Scanning Transmission Electron Microscope ◽  
Pressure Vessels ◽  
Practical Applications ◽  
Voltage Generator ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
New Applications ◽  
High Voltage Generator

Ultra high voltage STEM has many inherent technical advantages over CTEM. These advantages include better signal detectability and signal processing capability. It is hoped that it will explore some new applications which were previously not possible. Conventional STEM (including CTEM with STEM attachment), however, has been unable to provide these inherent advantages due to insufficient performance and engineering problems. Recently we have developed a new 1250 kV STEM and completed installation at Nagoya University in Japan. It has been designed to break through conventional engineering limitations and bring about theoretical advantage in practical applications.In the design of this instrument, we exercised maximum care in providing a stable electron probe. A high voltage generator and an accelerator are housed in two separate pressure vessels and they are connected with a high voltage resistor cable.(Fig. 1) This design minimized induction generated from the high voltage generator, which is a high frequency Cockcroft-Walton type, being transmitted to the electron probe.

Characterization of intergranular cuprous oxide in polycrystalline YBa2Cu3O7-x

1988 ◽  
Vol 46 ◽  
pp. 880-881
Author(s):  
Bradley L. Thiel ◽  
Chan Han R. P. ◽  
Kurosky L. C. Hutter ◽  
I. A. Aksay ◽  
Mehmet Sarikaya
Keyword(s):  
Grain Boundary ◽  
Cuprous Oxide ◽  
Room Temperature ◽  
Boundary Phase ◽  
Spectroscopic Techniques ◽  
Transition Width ◽  
Practical Applications ◽  
Thin Foils ◽  
Superconducting Oxides

The identification of extraneous phases is important in understanding of high Tc superconducting oxides. The spectroscopic techniques commonly used in determining the origin of superconductivity (such as RAMAN, XPS, AES, and EXAFS) are surface-sensitive. Hence a grain boundary phase several nanometers thick could produce irrelevant spectroscopic results and cause erroneous conclusions. The intergranular phases present a major technological consideration for practical applications. In this communication we report the identification of a Cu2O grain boundary phase which forms during the sintering of YBa2Cu3O7-x (1:2:3 compound).Samples are prepared using a mixture of Y2O3. CuO, and BaO2 powders dispersed in ethanol for complete mixing. The pellets pressed at 20,000 psi are heated to 950°C at a rate of 5°C per min, held for 1 hr, and cooled at 1°C per min to room temperature. The samples show a Tc of 91K with a transition width of 2K. In order to prevent damage, a low temperature stage is used in milling to prepare thin foils which are then observed, using a liquid nitrogen holder, in a Philips 430T at 300 kV.

Resolution and measurement in the scanning electron microscope

1987 ◽  
Vol 45 ◽  
pp. 534-537 ◽  
Author(s):  
Michael T. Postek
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Engineering Design ◽  
Resolving Power ◽  
Practical Applications ◽  
Instrument Resolution ◽  
Accurate Definition ◽  
Definition Of ◽  
Scanning Electron ◽  
Better Than

The term ultimate resolution or resolving power is the very best performance that can be obtained from a scanning electron microscope (SEM) given the optimum instrumental conditions and sample. However, as it relates to SEM users, the conventional definitions of this figure are ambiguous. The numbers quoted for the resolution of an instrument are not only theoretically derived, but are also verified through the direct measurement of images on micrographs. However, the samples commonly used for this purpose are specifically optimized for the measurement of instrument resolution and are most often not typical of the sample used in practical applications.SEM RESOLUTION. Some instruments resolve better than others either due to engineering design or other reasons. There is no definitively accurate definition of how to quantify instrument resolution and its measurement in the SEM.

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