Formation of porous silicon: an in situ investigation with high-resolution X-ray diffraction

2001 ◽  
Vol 21 (2) ◽  
pp. 185-190 ◽  
Author(s):  
V. Chamard ◽  
C. Pichat ◽  
G. Dolino
2017 ◽  
Vol 72 (6) ◽  
pp. 355-364
Author(s):  
A. Kopp ◽  
T. Bernthaler ◽  
D. Schmid ◽  
G. Ketzer-Raichle ◽  
G. Schneider

2007 ◽  
Vol 130 ◽  
pp. 7-14 ◽  
Author(s):  
Andrew N. Fitch

The highly-collimated, intense X-rays produced by a synchrotron radiation source can be harnessed to build high-resolution powder diffraction instruments with a wide variety of applications. The general advantages of using synchrotron radiation for powder diffraction are discussed and illustrated with reference to the structural characterisation of crystalline materials, atomic PDF analysis, in-situ and high-throughput studies where the structure is evolving between successive scans, and the measurement of residual strain in engineering components.


2014 ◽  
Vol 54 (6) ◽  
pp. 1799-1802 ◽  
Author(s):  
Lisa Batzdorf ◽  
Franziska Fischer ◽  
Manuel Wilke ◽  
Klaus-Jürgen Wenzel ◽  
Franziska Emmerling

2008 ◽  
Vol 72 (1) ◽  
pp. 217-220 ◽  
Author(s):  
H. P. Vu ◽  
S. Shaw ◽  
L. G. Benning

AbstractThe kinetics and mechanisms of the transformation of 2-line ferrihydrite (FH) to hematite (HM), in the presence of Pb at elevated temperatures and high pH condition, were elucidated using synchrotron-based,in situenergy dispersive X-ray diffraction (EDXRD). The time-resolved diffraction data indicated that HM crystallization occurred via a two-stage process. Based on the EDXRD data, combined with high-resolution electron microscopic images, an aqueous-aided 2D growth mechanism is proposed for both HM crystallization stages.


1993 ◽  
Vol 312 ◽  
Author(s):  
A. H. Bensaoula ◽  
A. Freundlich ◽  
A. Bensaoula ◽  
V. Rossignol

AbstractPhosphorus exposed GaAs (100) surfaces during a Chemical Beam Epitaxy growth process are studied using in-situ Reflection High Energy Electron Diffraction and ex-situ High Resolution X-ray Diffraction. It is shown that the phosphorus exposure of a GaAs (100) surface in the 500 – 580 °C temperature range results in the formation of one GaP monolayer.


Author(s):  
D. K. Satapathy ◽  
B. Jenichen ◽  
V. M. Kaganer ◽  
W. Braun ◽  
L. Däweritz ◽  
...  

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