scholarly journals The interplay between the surface band structure and possible surface reconstructions of Mo(112)

2000 ◽  
Vol 14 (4) ◽  
pp. 747-755 ◽  
Author(s):  
T. McAvoy ◽  
J. Zhang ◽  
C. Waldfried ◽  
D.N. McIlroy ◽  
P.A. Dowben ◽  
...  
2002 ◽  
Vol 09 (02) ◽  
pp. 687-691
Author(s):  
L. I. JOHANSSON ◽  
C. VIROJANADARA ◽  
T. BALASUBRAMANIAN

A study of effects induced in the Be 1s core level spectrum and in the surface band structure after Si adsorption on Be(0001) is reported. The changes in the Be 1s spectrum are quite dramatic. The number of resolvable surface components and the magnitude of the shifts do decrease and the relative intensities of the shifted components are drastically different compared to the clean surface. The surface band structure is also strongly affected after Si adsorption and annealing. At [Formula: see text] the surface state is found to move down from 2.8 to 4.1 eV. The band also splits at around 0.5 Å-1 along both the [Formula: see text] and [Formula: see text] directions. At [Formula: see text] and beyond [Formula: see text] only one surface state is observed in the band gap instead of the two for the clean surface. Our findings indicate that a fairly small amount of Si in the outer atomic layers strongly modifies the electronic properties of these layers.


Author(s):  
Konstantin V. Emtsev ◽  
Thomas Seyller ◽  
Lothar Ley ◽  
A. Tadich ◽  
L. Broekman ◽  
...  
Keyword(s):  

1998 ◽  
Vol 409 (1) ◽  
pp. 130-136 ◽  
Author(s):  
M.Cristina Vargas ◽  
W.Luis Mochán

2014 ◽  
Vol 488 (3) ◽  
pp. 032014
Author(s):  
C A Ríos Rubiano ◽  
M S Gravielle ◽  
D M Mitnik ◽  
V M Silkin

2011 ◽  
Vol 134 (1) ◽  
pp. 324-332 ◽  
Author(s):  
Ana Stevanovic ◽  
Michael Büttner ◽  
Zhen Zhang ◽  
John T. Yates

1993 ◽  
Vol 47 (20) ◽  
pp. 13594-13598 ◽  
Author(s):  
K. S. Shin ◽  
C. Y. Kim ◽  
J. W. Chung ◽  
S. C. Hong ◽  
S. K. Lee ◽  
...  

2014 ◽  
Vol 89 (15) ◽  
Author(s):  
C. D. Archubi ◽  
M. N. Faraggi ◽  
V. M. Silkin ◽  
M. S. Gravielle

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