Topological phase interference effects in resonant quantum tunneling of the Néel vector between nonequivalent magnetic wells in mesoscopic single-domain antiferromagnets

2000 ◽  
Vol 14 (2) ◽  
pp. 349-361 ◽  
Author(s):  
Rong Lü ◽  
Hui Hu ◽  
Jia-Lin Zhu ◽  
Xiao-Bing Wang ◽  
Lee Chang ◽  
...  
2000 ◽  
Vol 61 (21) ◽  
pp. 14581-14591 ◽  
Author(s):  
Rong Lü ◽  
Hui Hu ◽  
Jia-Lin Zhu ◽  
Xiao-Bing Wang ◽  
Lee Chang ◽  
...  

1997 ◽  
Vol 07 (C1) ◽  
pp. C1-527-C1-528
Author(s):  
T. Oku ◽  
H. Takano ◽  
M. Ohwada ◽  
T. Sato ◽  
E. Ohta

1994 ◽  
Vol 197 (1-4) ◽  
pp. 109-114 ◽  
Author(s):  
David P. Di Vincenzo

2000 ◽  
Vol 61 (13) ◽  
pp. 8856-8862 ◽  
Author(s):  
J.-Q. Liang ◽  
H. J. W. Müller-Kirsten ◽  
D. K. Park ◽  
F.-C. Pu

2021 ◽  
Author(s):  
Su Kong Chong ◽  
Lizhe Liu ◽  
Kenji Watanabe ◽  
Takashi Taniguchi ◽  
Taylor Sparks ◽  
...  

Abstract As the thickness of a three-dimensional (3D) topological insulator (TI) becomes comparable to the penetration depth of surface states, quantum tunneling between surfaces turns their gapless Dirac electronic structure into a gapped spectrum. Whether the surface hybridization gap can host topological edge states is still an open question. Herein, we provide transport evidence of 2D topological states in the quantum tunneling regime of a bulk insulating 3D TI BiSbTeSe2. Different from its trivial insulating phase, this 2D topological state exhibits a finite longitudinal conductance at ~2e2/h when the Fermi level is aligned within the surface gap, indicating an emergent quantum spin Hall (QSH) state. The transition from the QSH to quantum Hall (QH) state in a transverse magnetic field further supports the existence of this distinguished 2D topological phase. In addition, we demonstrate a second route to realize the 2D topological state via surface gap-closing and topological phase transition mechanism mediated by a transverse electric field. The experimental realization of the 2D topological phase in a 3D TI enriches its phase diagram and marks an important step toward functional topological quantum devices.


1993 ◽  
Vol 73 (10) ◽  
pp. 6952-6954 ◽  
Author(s):  
J. Tejada ◽  
Ll. Balcells ◽  
S. Linderoth ◽  
R. Perzynski ◽  
B. Rigau ◽  
...  

2005 ◽  
Vol 127 (32) ◽  
pp. 11311-11317 ◽  
Author(s):  
Lollita Lecren ◽  
Wolfgang Wernsdorfer ◽  
Yang-Guang Li ◽  
Olivier Roubeau ◽  
Hitoshi Miyasaka ◽  
...  

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