Voltage gating of Cx43 gap junction channels involves fast and slow current transitions

1999 ◽  
Vol 439 (3) ◽  
pp. 248-250 ◽  
Author(s):  
K. Banach ◽  
R. Weingart
Keyword(s):  
Gap Junction ◽  
Voltage Gating ◽  
Gap Junction Channels

scholarly journals Stochastic 16-State Model of Voltage Gating of Gap-Junction Channels Enclosing Fast and Slow Gates

2012 ◽  
Vol 102 (11) ◽  
pp. 2471-2480 ◽  
Author(s):  
Nerijus Paulauskas ◽  
Henrikas Pranevicius ◽  
Jonas Mockus ◽  
Feliksas F. Bukauskas
Keyword(s):  
Gap Junction ◽  
Voltage Gating ◽  
State Model ◽  
Gap Junction Channels

scholarly journals A Stochastic Model of Voltage-Gating of Connexin-Based Gap Junction Channels Containing Fast and Slow Gates

2011 ◽  
Vol 100 (3) ◽  
pp. 564a
Author(s):  
Nerijus Paulauskas ◽  
Henrikas Pranevicius ◽  
Feliksas Bukauskas
Keyword(s):  
Stochastic Model ◽  
Gap Junction ◽  
Voltage Gating ◽  
Gap Junction Channels

Continuous Time Markov Chain Models of Voltage Gating of Gap Junction Channels

2014 ◽  
Vol 43 (2) ◽  
Author(s):  
H. Pranevicius ◽  
M. Pranevicius ◽  
O. Pranevicius ◽  
M. Snipas ◽  
N. Paulauskas ◽  
...  
Keyword(s):  
Markov Chain ◽  
Gap Junction ◽  
Continuous Time ◽  
Voltage Gating ◽  
Continuous Time Markov Chain ◽  
Gap Junction Channels ◽  
Markov Chain Models

Opposing gates model for voltage gating of gap junction channels

2001 ◽  
Vol 281 (5) ◽  
pp. C1604-C1613 ◽  
Author(s):  
Ye Chen-Izu ◽  
Alonso P. Moreno ◽  
Robert A. Spangler
Keyword(s):  
Gap Junction ◽  
Present Model ◽  
Voltage Gating ◽  
Voltage Range ◽  
Gap Junction Channels ◽  
Gating Model ◽  
Gap Junction Channel ◽  
Intercellular Channels ◽  
Heterotypic Channels

Gap junctions are intercellular channels that link the cytoplasm of neighboring cells. Because a gap junction channel is composed of two connexons docking head-to-head with each other, the channel voltage-gating profile is symmetrical for homotypic channels made of two identical connexons (hemichannels) and asymmetric for the heterotypic channels made of two different connexons (i.e., different connexin composition). In this study we have developed a gating model that allows quantitative characterization of the voltage gating of homotypic and heterotypic channels. This model differs from the present model in use by integrating, rather than separating, the contributions of the voltage gates of the two member connexons. The gating profile can now be fitted over the entire voltage range, eliminating the previous need for data splicing and fusion of two hemichannel descriptions, which is problematic when dealing with heterotypic channels. This model also provides a practical formula to render quantitative several previously qualitative concepts, including a similarity principle for matching a voltage gate to its host connexon, assignment of gating polarity to a connexon, and the effect of docking interactions between two member connexons in an intact gap junction channel.

Markovian Model of the Voltage Gating of Connexin-based Gap Junction Channels

1970 ◽  
Vol 111 (5) ◽  
pp. 103-106
Author(s):  
A. Sakalauskaite ◽  
H. Pranevicius ◽  
M. Pranevicius ◽  
F. Bukauskas
Keyword(s):  
Gap Junctions ◽  
Small Molecules ◽  
Gap Junction ◽  
Voltage Gating ◽  
Cellular Activity ◽  
Chemical Signaling ◽  
Gap Junction Channels ◽  
Chemical Reagents ◽  
Direct Cell ◽  
Nonlinear Conductance

Gap junction (GJ) channels, which are formed of a connexin (Cx) protein provide pathways through which ions and small molecules are exchanged between adjacent cells. GJs co-ordinate the cellular activity in tissues by synchronizing their electrical activity and allowing a direct cell-to-cell chemical signaling. Electrically gap junctions present nonlinear conductance that depends on transjunctional voltage and can be modulated by chemical reagents and ions, such as pH, Ca2+, etc. Here, we describe the model of the voltage gating of gap junctions using Markovian formalism. The results obtained using a stationary Markov model are well comparable with those obtained using a stochastic/imitational model of voltage gating. Ill. 5, bibl. 5, tabl. 3 (in English; abstracts in English and Lithuanian).http://dx.doi.org/10.5755/j01.eee.111.5.367

Sign in / Sign up

Export Citation Format

Share Document