Development of conductive transparent indium tin oxide (ITO) thin films deposited by direct current (DC) magnetron sputtering for photon-STM applications

2001 ◽  
Vol 72 (5) ◽  
pp. 595-601 ◽  
Author(s):  
W. Deng ◽  
T. Ohgi ◽  
H. Nejo ◽  
D. Fujita
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Direct Current ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Dc Magnetron Sputtering ◽  
Ito Thin Films ◽  
Photon Stm

Photoelectrochemical properties of nitrogen-doped indium tin oxide thin films prepared by reactive DC magnetron sputtering

2009 ◽  
Vol 518 (5) ◽  
pp. 1581-1584 ◽  
Author(s):  
Kee-Rong Wu ◽  
Chung-Wei Yeh ◽  
Chung-Hsuang Hung ◽  
Li-Hsun Cheng ◽  
Chih-Yuan Chung
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Photoelectrochemical Properties ◽  
Dc Magnetron Sputtering ◽  
Oxide Thin Films ◽  
Nitrogen Doped

Properties of Indium Tin Oxide Films Prepared by RF Magnetron Sputtering at Different Substrate Temperatures

2012 ◽  
Vol 502 ◽  
pp. 77-81
Author(s):  
Z.Y. Zhong ◽  
J.H. Gu ◽  
X. He ◽  
C.Y. Yang ◽  
J. Hou
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Photoelectron Spectroscopy ◽  
Visible Region ◽  
Rf Magnetron Sputtering ◽  
X Ray ◽  
Ito Thin Films

Indium tin oxide (ITO) thin films were deposited by RF magnetron sputtering on glass substrates employing a sintered ceramic target. The influence of substrate temperature on the structural, compositional, optical and electrical properties of the thin films were investigated by X-ray diffractometer (XRD), X-ray photoelectron spectroscopy (XPS), spectrophotometer and four-point probes. All the ITO thin films show a polycrystalline indium oxide structure and have a preferred orientation along the (222) direction. The substrate temperature significantly affects the crystal structure and optoelectrical properties of the thin films. With the increment of substrate temperature, the electrical resistivity of the deposited films decreases, the crystallite dimension, optical bandgap and average transmittance in the visible region increase. The ITO thin film deposited at substrate temperature of 200 °C possesses the best synthetic optoelectrical properties, with the highest transmittance, the lowest resistivity and the highest figure of merit.

Structural and Optical Properties of Nickel (Ni)/indium Tin Oxide (ITO) Thin-Films Deposited by RF Magnetron Sputtering

2014 ◽  
Vol 895 ◽  
pp. 181-185 ◽  
Author(s):  
M. Sobri ◽  
A. Shuhaimi ◽  
M. Mazwan ◽  
K.M. Hakim ◽  
S. Najwa ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Seed Layer ◽  
Rf Magnetron Sputtering ◽  
Sample Surface ◽  
Deposition Parameter ◽  
Ito Thin Films

Nickel (Ni)/ indium tin oxide (ITO) thin-films have been deposited on silicon (Si) and glass substrates using radio-frequency (RF) magnetron sputtering at 200°C temperature. ITO layer was deposited on top of Ni layer with various deposition parameter. The material and optical properties of the ITO samples with and without Ni seed layer were analyzed. X-ray diffraction studies shows that the films are crystalline with the typical ITO diffraction peaks of (222), (400) and (411). The FESEM and AFM images shows that the grains have uniform shapes and sizes. FESEM results reveal that the grain size along the sample surface decreases when the Ni seed layer is added. Both the samples shows higher transmittance of more than 95% in UV-vis spectrometer.

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