Self-organized network structure appearing in the B/Si(111)-( $\sqrt{3}$]] × $\sqrt{3}$]] )R30° phase formation process studied by scanning tunneling microscopy

1998 ◽  
Vol 66 (7) ◽  
pp. S1013-S1016 ◽  
Author(s):  
K. Miyake ◽  
H. Shigekawa
2003 ◽  
Vol 15 (11) ◽  
pp. 881-884 ◽  
Author(s):  
B. Grévin ◽  
P. Rannou ◽  
R. Payerne ◽  
A. Pron ◽  
J.-P. Travers

1999 ◽  
Vol 571 ◽  
Author(s):  
P. Ballet ◽  
J.B. Smathers ◽  
G.J. Salamo

ABSTRACTWe report an in-situ molecular beam epitaxy – scanning tunneling microscopy study of three dimensional (3D) self organized InAs islands on (AI,Ga)As surfaces. The influence of the presence of Al atoms on the roughness of the starting surface and on the island density is shown by investigating several Al compositions. We emphasize the case of InAs/AlAs and point out the major differences between this system and the widely studied InAs/GaAs system.


2008 ◽  
Vol 602 (5) ◽  
pp. L29-L32 ◽  
Author(s):  
Yuya Murata ◽  
Takehiko Kimura ◽  
Takashi Matsumoto ◽  
Shin-ichi Honda ◽  
Mitsuhiro Katayama

2002 ◽  
Vol 106 (31) ◽  
pp. 7627-7633 ◽  
Author(s):  
Miki Sano ◽  
Tomoyuki Adaniya ◽  
Tadahiro Fujitani ◽  
Junji Nakamura

2005 ◽  
Vol 127 (11) ◽  
pp. 4033-4041 ◽  
Author(s):  
Lukas J. Scherer ◽  
Leo Merz ◽  
Edwin C. Constable ◽  
Catherine E. Housecroft ◽  
Markus Neuburger ◽  
...  

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