Influences of thermal annealing, the electrolyte pH, and current density on the interface state density distribution of anodic MOS structures

1997 ◽  
Vol 65 (1) ◽  
pp. 33-37 ◽  
Author(s):  
M. Saglam ◽  
A. Türüt ◽  
Ç. Nuhoglu ◽  
H. Efeoglu ◽  
T. Kılıçoglu ◽  
...  
Keyword(s):  
Density Distribution ◽  
Thermal Annealing ◽  
Current Density ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Mos Structures ◽  
Electrolyte Ph

Characterizations of Ultra-thin Dielectrics Grown by Microwave Afterglow O2/N2O Plasma Oxidation at Low Temperature with Rapid Thermal Annealing

1995 ◽  
Vol 387 ◽  
Author(s):  
Po-ching Chen ◽  
Klaus Yung-jane Hsu ◽  
Joseph J. Loferski ◽  
Huey-liang Hwang
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Photoelectron Spectroscopy ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Plasma Oxidation ◽  
X Ray ◽  
Thin Dielectrics

AbstractMicrowave afterglow plasma oxidation at a low temperature (600 °C ) and rapid thermal annealing (RTA) were combined to grow high quality ultra-thin dielectrics. This new approach has a low thermal budget. The mid-gap interface state density of oxides pretreated in N2O plasma was decreased to about 5×1010 cm−2eV−1 after rapid thermal annealing at 950 °C.It was found that RTA is very effective for relieving the oxide stress and reducing the interface state density. Nitrogen incorporated in oxides by the N2O plasma pretreatment of the Si surface helped to reduce the interface state density. Microstructures of ultra-thin oxide grown by microwave afterglow oxidation with or without RTA were revealed by extended-X-ray-absorption-finestructure (EXAFS) and X-ray photoelectron spectroscopy (XPS) analysis.

Interface state density measurement in MOS structures by analysis of the thermally stimulated conductance

1990 ◽  
Vol 33 (8) ◽  
pp. 987-992 ◽  
Author(s):  
A. de Dios ◽  
E. Castán ◽  
L. Bailón ◽  
J. Barbolla ◽  
M. Lozano ◽  
...  
Keyword(s):  
Density Measurement ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Mos Structures

Systematic Investigation of Interface Properties in 4H-SiC MOS Structures Prepared by Over-Oxidation of Ion-Implanted Substrates

2010 ◽  
Vol 645-648 ◽  
pp. 495-498 ◽  
Author(s):  
Dai Okamoto ◽  
Hiroshi Yano ◽  
Tomoaki Hatayama ◽  
Takashi Fuyuki
Keyword(s):  
Interface State ◽  
Systematic Investigation ◽  
Implantation Dose ◽  
State Density ◽  
Interface State Density ◽  
Oxide Semiconductor ◽  
Conduction Band Edge ◽  
Strong Reduction ◽  
Mos Capacitors ◽  
Mos Structures

A change in the interface state density in 4H-SiC metal–oxide–semiconductor (MOS) structures by incorporation of various elements was systematically investigated. B, N, F, Al, P, and Cl ions were implanted prior to the oxidation and introduced at the SiO2/SiC interface by subsequent thermal oxidation. Interface state density near the conduction band edge for Al-, B-, F-, and Cl-implanted MOS capacitors increased with implantation dose. On the other hand, a strong reduction of the interface state density was observed for N- and P-implanted samples when the implantation dose was larger than 5.0 × 1012 cm−2. It was found that the interface state density can be reduced by P as well as N.

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