Direct observation of strain relaxation in iron layers on W(1 1 0) by time-resolved STM

1996 ◽  
Vol 62 (3) ◽  
pp. 217-221 ◽  
Author(s):  
C. Jensen ◽  
K. Reshöft ◽  
U. Köhler
1996 ◽  
Vol 62 (3) ◽  
pp. 217-221 ◽  
Author(s):  
C. Jensen ◽  
K. Reshöft ◽  
U. Köhler

1992 ◽  
Vol 281 ◽  
Author(s):  
T. E. Haynes ◽  
C. Lee ◽  
K. S. Jones

ABSTRACTThe rate of solid-phase epitaxial regrowth has been studied using time-resolved reflectivity in three different types of SiGe/Si epilayers amorphized by ion implantation. In two of these cases, the alloy epilayer contained either 12% or 20% Ge, and the amorphization depth was greater than the thickness (2000 Å) of the SiGe alloy layer. Time-resolved reflectivity measurements showed that the rate of regrowth was not constant in these two cases, but first decreased after passing the SiGe/Si interface, and then increased. The minimum regrowth rate occurred closer to the SiGe/Si interface in the epilayers with the larger Ge atomic fraction. In the third type of sample, the alloy epilayer thickness was ∼7μm, so that the initial epilayer (15% Ge) had the lattice constant of the bulk alloy. Furthermore, amorphization and regrowth occurred entirely within the relaxed alloy layer. In this case, the regrowth rate was constant. The composition dependence of the regrowth-rate transient in the strained layers is discussed in the context of a ‘critical-thickness’ model of strain relaxation.


2011 ◽  
Vol 123 (24) ◽  
pp. 5609-5612 ◽  
Author(s):  
Jozef Adamcik ◽  
Valeria Castelletto ◽  
Sreenath Bolisetty ◽  
Ian W. Hamley ◽  
Raffaele Mezzenga

2003 ◽  
Vol 42 (16) ◽  
pp. 1826-1830 ◽  
Author(s):  
Wai-Ming Kwok ◽  
Michael W. George ◽  
David C. Grills ◽  
Chensheng Ma ◽  
Pavel Matousek ◽  
...  

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