Integrated optical NIR-evanescent wave absorbance sensorfor chemical analysis

1996 ◽  
Vol 354 (3) ◽  
pp. 284-290 ◽  
Author(s):  
J. B�rck ◽  
B. Zimmermann ◽  
J. Mayer ◽  
H. -J. Ache
Keyword(s):  
Chemical Analysis ◽  
Evanescent Wave ◽  
Integrated Optical

scholarly journals Integrated optical sensor platform for multiparameter bio-chemical analysis

2011 ◽  
Vol 19 (14) ◽  
pp. 13277 ◽  
Author(s):  
Peter Lützow ◽  
Daniel Pergande ◽  
Helmut Heidrich
Keyword(s):  
Chemical Analysis ◽  
Optical Sensor ◽  
Sensor Platform ◽  
Integrated Optical ◽  
Integrated Optical Sensor

Integrated optical microcavities for enhanced evanescent-wave spectroscopy

2002 ◽  
Vol 27 (17) ◽  
pp. 1504 ◽  
Author(s):  
E. Krioukov ◽  
D. J. W. Klunder ◽  
A. Driessen ◽  
J. Greve ◽  
C. Otto
Keyword(s):  
Evanescent Wave ◽  
Optical Microcavities ◽  
Integrated Optical

Ammonia detection via integrated optical evanescent wave sensors

1995 ◽  
Vol 121 (1-4) ◽  
pp. 95-105 ◽  
Author(s):  
Albrecht Brandenburg ◽  
Rainer Edelh�user ◽  
Tobias Werner ◽  
Huarui He ◽  
Otto S. Wolfbeis
Keyword(s):  
Evanescent Wave ◽  
Integrated Optical ◽  
Ammonia Detection ◽  
Wave Sensors

Aspects of microanalysis in a transmission electron microscope

1978 ◽  
Vol 36 (1) ◽  
pp. 510-511
Author(s):  
R. Sinclair ◽  
B.E. Jacobson
Keyword(s):  
Grain Size ◽  
Electron Beam ◽  
Electron Microscope ◽  
Chemical Analysis ◽  
Transmission Electron Microscope ◽  
Vapor Deposition ◽  
Critical Currents ◽  
X Ray ◽  
Fine Grain ◽  
Transmission Electron

INTRODUCTIONThe prospect of performing chemical analysis of thin specimens at any desired level of resolution is particularly appealing to the materials scientist. Commercial TEM-based systems are now available which virtually provide this capability. The purpose of this contribution is to illustrate its application to problems which would have been intractable until recently, pointing out some current limitations.X-RAY ANALYSISIn an attempt to fabricate superconducting materials with high critical currents and temperature, thin Nb3Sn films have been prepared by electron beam vapor deposition [1]. Fine-grain size material is desirable which may be achieved by codeposition with small amounts of Al2O3 . Figure 1 shows the STEM microstructure, with large (∽ 200 Å dia) voids present at the grain boundaries. Higher quality TEM micrographs (e.g. fig. 2) reveal the presence of small voids within the grains which are absent in pure Nb3Sn prepared under identical conditions. The X-ray spectrum from large (∽ lμ dia) or small (∽100 Ǻ dia) areas within the grains indicates only small amounts of A1 (fig.3).

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