Inertial effects in the rotationally driven melt motion during the Czochralski growth of silicon crystals with a strong axial magnetic field

2000 ◽  
Vol 51 (2) ◽  
pp. 267 ◽  
Author(s):  
G. Talmage ◽  
S.-H. Shyu ◽  
J. S. Walker ◽  
J. M. Lopez
Keyword(s):  
Magnetic Field ◽  
Axial Magnetic Field ◽  
Inertial Effects ◽  
Czochralski Growth ◽  
Silicon Crystals

Forced Convection During Liquid Encapsulated Crystal Growth With an Axial Magnetic Field

1998 ◽  
Vol 120 (4) ◽  
pp. 844-850 ◽  
Author(s):  
Nancy Ma ◽  
John Walker ◽  
David Bliss ◽  
George Bryant
Keyword(s):  
Magnetic Field ◽  
Field Strength ◽  
Forced Convection ◽  
Magnetic Field Strength ◽  
Axial Magnetic Field ◽  
Vertical Wall ◽  
Czochralski Growth ◽  
Centripetal Acceleration ◽  
Radial Gap ◽  
The Magnetic Field

This paper treats the forced convection, which is produced by the rotation of the crystal about its vertical centerline during the liquid-encapsulated Czochralski or Kyropoulos growth of compound semiconductor crystals, with a uniform vertical magnetic field. The model assumes that the magnetic field strength is sufficiently large that convective heat transfer and all inertial effects except the centripetal acceleration are negligible. With the liquid encapsulant in the radial gap between the outside surface of the crystal and the vertical wall of the crucible, the forced convection is fundamentally different from that with a free surface between the crystal and crucible for the Czochralski growth of silicon crystals. Again unlike the case for silicon growth, the forced convection for the actual nonzero electrical conductivity of an indium-phosphide crystal is virtually identical to that for an electrically insulating crystal. The electromagnetic damping of the forced convection is stronger than that of the buoyant convection. In order to maintain a given balance between the forced and buoyant convections, the angular velocity of the crystal must be increased as the magnetic field strength is increased.

Diffusion-Controlled Dopant Transport During Magnetically-Stabilized Liquid-Encapsulated Czochralski Growth of Compound Semiconductor Crystals

2001 ◽  
Vol 123 (4) ◽  
pp. 893-898 ◽  
Author(s):  
Joseph L. Morton ◽  
Nancy Ma ◽  
David F. Bliss ◽  
George G. Bryant
Keyword(s):  
Magnetic Field ◽  
Optical Properties ◽  
Dopant Concentration ◽  
Axial Magnetic Field ◽  
Compound Semiconductor ◽  
Czochralski Growth ◽  
Semiconductor Crystal ◽  
Semiconductor Crystals ◽  
Diffusion Controlled ◽  
Single Compound

During the magnetically-stabilized liquid-encapsulated Czochralski (MLEC) process, a single compound semiconductor crystal is grown by the solidification of an initially molten semiconductor (melt) contained in a crucible. The melt is doped with an element in order to vary the electrical and/or optical properties of the crystal. During growth, the so-called melt-depletion flow caused by the opposing relative velocities of the encapsulant-melt interface and the crystal-melt interface can be controlled with an externally applied magnetic field. The convective dopant transport during growth driven by this melt motion produces nonuniformities of the dopant concentration in both the melt and the crystal. This paper presents a model for the unsteady transport of a dopant during the MLEC process with an axial magnetic field. Dopant distributions in the crystal and in the melt at several different stages during growth are presented.

EXPANSION OF LASER-PRODUCED ION BEAMS IN AN AXIAL MAGNETIC FIELD

2002 ◽  
Vol 6 (4) ◽  
pp. 8
Author(s):  
J. Wolowski ◽  
J. Badziak ◽  
P. Parys ◽  
E. Woryna ◽  
J. Krasa ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Axial Magnetic Field ◽  
Ion Beams
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