Microscopic theory of optic-phonon Raman scattering in quantum-well systems

1990 ◽  
Vol 41 (9) ◽  
pp. 5825-5842 ◽  
Author(s):  
Kun Huang ◽  
Bang-fen Zhu ◽  
Hui Tang
Keyword(s):  
Quantum Well ◽  
Raman Scattering ◽  
Microscopic Theory ◽  
Optic Phonon

Raman Scattering Spectroscopy of GeSi/Si Strained Layer Superlattice

1993 ◽  
Vol 298 ◽  
Author(s):  
Zhang Rong ◽  
Zheng Youdou ◽  
Gu Shulin ◽  
Hu Liqun
Keyword(s):  
Raman Scattering ◽  
Frequency Shift ◽  
Raman Spectra ◽  
Strain Distribution ◽  
Phonon Frequency ◽  
New Method ◽  
Raman Scattering Spectroscopy ◽  
Scattering Measurements ◽  
Optic Phonon ◽  
Strained Layer Superlattice

AbstractRaman scattering measurements have been carried out on Si1-xGex/Si SLS. It is found that the Ge–Ge optic phonon frequency shift is proportional to strain in the SiGe film, and the Ge–Ge strain shift coefficient is 408cm−1. Based on these study a new method for analyzing the Raman spectra of SiGe/Si SLS has been proposed. Using the new method we can obtain the composition of the alloy sublayers as well as the strain in SLS. The strain distribution in the SiGe/Si SLS has been discussed, and strain in both SiGe and Si sublayers of the SLS have been calculated.

Raman scattering studies on slow crystallization process from amorphous PbTiO3

1983 ◽  
Vol 44 (11) ◽  
pp. 313-318 ◽  
Author(s):  
Masaaki Takashige ◽  
Terutaro Nakamura ◽  
Yutaka Aikawa
Keyword(s):  
Raman Scattering ◽  
Crystallization Process
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