Hopping conduction and the Coulomb gap; applications to Fe3O4, Ti4O7 and impurity conduction in Si:P

2007 ◽  
pp. 331-361 ◽  
Author(s):  
Nevill F. Mott
Keyword(s):  
Hopping Conduction ◽  
Coulomb Gap ◽  
Impurity Conduction

Variable Range Hopping Conduction in CuInSe2in the Presence of a Coulomb Gap

1993 ◽  
Vol 32 (S3) ◽  
pp. 675 ◽  
Author(s):  
J. G. Albornoz ◽  
E. Hernández ◽  
S. M. Wasim ◽  
P. Bocaranda
Keyword(s):  
Hopping Conduction ◽  
Variable Range Hopping ◽  
Coulomb Gap ◽  
Variable Range ◽  
Variable Range Hopping Conduction

Hopping conduction and possible Coulomb gap effects in manganese and zinc ferrous ferrite

1995 ◽  
Vol 71 (1) ◽  
pp. 23-39 ◽  
Author(s):  
P. J. Phillips ◽  
T. E. Whall ◽  
V. A. M. Brabers
Keyword(s):  
Hopping Conduction ◽  
Coulomb Gap ◽  
Gap Effects

THE HOPPING CONDUCTION OF NEUTRON TRANSMUTED GERMANIUM

1994 ◽  
Vol 08 (07) ◽  
pp. 883-889 ◽  
Author(s):  
A.G. ZABRODSKII ◽  
A.G. ANDREEV
Keyword(s):  
Temperature Dependence ◽  
Nearest Neighbor ◽  
Hopping Conduction ◽  
Variable Range Hopping ◽  
Hopping Transport ◽  
Coulomb Gap ◽  
Variable Range ◽  
Neutron Transmutation ◽  
Mi Transition ◽  
Main Impurity

An investigation was made of a batch of samples of neutron transmutation-doped (NTD) Ge:Ga with the degree of compensation K=0.3 and the concentration of the main impurity (Ga) from N=3.6 · 1014cm−3 to Nc=2.5 · 1017cm−3, corresponding to the MI transition. The following were studied: the parameters of NTD Ge:Ga, the temperature dependence of hopping transport, the ɛ3 region of the nearest neighbor hopping (NNH), the saturation of NNH, variable range hopping (VRH) and the Coulomb gap.

Impurity Conduction in n-Type 4H-SIC

1996 ◽  
Vol 423 ◽  
Author(s):  
A. O. Evwaraye ◽  
S. R. Smith ◽  
W. C. Mitchel ◽  
M. D. Roth
Keyword(s):  
Activation Energies ◽  
Hopping Conduction ◽  
Admittance Spectroscopy ◽  
Temperature Dependent ◽  
Resistivity Measurements ◽  
Nitrogen Levels ◽  
Impurity Conduction ◽  
Measured Activation ◽  
Temperature Dependent Resistivity ◽  
Type Sample

AbstractImpurity conduction (or hopping conduction) has been observed in the more heavily n-type 4H-SiC samples by both temperature dependent resistivity measurements and thermal admittance spectroscopy. The measured activation energies ɛ 3 for hopping were 4–5 meV and 2.3–3.0 meV respectively. No evidence of hopping conduction was seen by either method in the sample where ND-NA < 1018 cm-3. The thermal admittance spectrum of the lightly n-type sample showed the two nitrogen levels at 53 and 100 meV.

HOPPING CONDUCTION AT VERY LOW TEMPERATURES: SOME NEW RESULTS ON AN OLD PROBLEM

1993 ◽  
Vol 07 (05) ◽  
pp. 265-269
Author(s):  
PEIHUA DAI ◽  
YOUZHU ZHANG ◽  
M. P. SARACHIK
Keyword(s):  
Magnetic Field ◽  
Temperature Dependence ◽  
Density Of States ◽  
Low Temperatures ◽  
Zero Magnetic Field ◽  
Strong Temperature Dependence ◽  
Hopping Conduction ◽  
Doped Semiconductors ◽  
Metal Insulator ◽  
Coulomb Gap

We briefly review the temperature dependence of hopping conduction in doped semiconductors near the metal-insulator transition, with emphasis on recent experimental results in Si:B at very low temperatures. Our main finding is that at sufficiently low temperature the conduction is simply activated in zero magnetic field, indicating the presence of a "hard" gap in the density of states. A magnetic field suppresses this unexpectedly strong temperature dependence, changing it to the variable-range-hopping form expected for a "soft" Coulomb gap. This suggests that the density of states is determined by electron correlations due to exchange as well as charge.

Magnetoresistivity of ZnSe in the Region of Hopping Conduction over Localized States in the Coulomb Gap

1987 ◽  
Vol 139 (2) ◽  
pp. 559-564 ◽  
Author(s):  
V. A. Kasiyan ◽  
D. D. Nedeoglo ◽  
A. V. Simashkevich ◽  
I. N. Timchenko
Keyword(s):  
Localized States ◽  
Hopping Conduction ◽  
Coulomb Gap

Low temperature impurity conduction in silicon

1959 ◽  
Vol 8 ◽  
pp. 259-261 ◽  
Author(s):  
T.A. Longo ◽  
R.K. Ray ◽  
K. Lark-Horovitz
Keyword(s):  
Low Temperature ◽  
Impurity Conduction
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