Very high electron velocity in short gallium arsenide structures

2007 ◽  
pp. 173-187 ◽  
Author(s):  
Lester F. Eastman
Keyword(s):  
Gallium Arsenide ◽  
Electron Velocity ◽  
High Electron ◽  
Very High

Use of LaB6 for a High Quality, Small Energy Spread Beam in an Electron Velocity Spectrometer

1976 ◽  
Vol 34 ◽  
pp. 534-535 ◽  
Author(s):  
P. E. Batson ◽  
C. H. Chen ◽  
J. Silcox
Keyword(s):  
High Temperature ◽  
Energy Resolution ◽  
Electron Velocity ◽  
Electronic Excitations ◽  
Small Energy ◽  
Small Intensity ◽  
Good Energy ◽  
Spectrometer System ◽  
Electron Energy Loss ◽  
Very High

Electron energy loss experiments combined with microscopy have proven to be a valuable tool for the exploration of the structure of electronic excitations in materials. These types of excitations, however, are difficult to measure because of their small intensity. In a usual situation, the filament of the microscope is run at a very high temperature in order to present as much intensity as possible at the specimen. This results in a degradation of the ultimate energy resolution of the instrument due to thermal broadening of the electron beam.We report here observations and measurements on a new LaB filament in a microscope-velocity spectrometer system. We have found that, in general, we may retain a good energy resolution with intensities comparable to or greater than those available with the very high temperature tungsten filament. We have also explored the energy distribution of this filament.

Partially planar BP3with high electron mobility as a phosphorene analog

2017 ◽  
Vol 5 (43) ◽  
pp. 11267-11274 ◽  
Author(s):  
Fazel Shojaei ◽  
Hong Seok Kang
Keyword(s):  
Electron Mobility ◽  
High Electron ◽  
Two Dimensional ◽  
High Electron Mobility ◽  
Stacking Pattern ◽  
Very High ◽  
Bilayer Formation

We propose a two-dimensional BP3crystal with a very high electron mobility of 4.6 × 104cm2V−1s−1. Bilayer formation, specifically stacking pattern AA, results in an even higher electron mobility of ∼3.7 × 105cm2V−1s−1, which is ∼2500 times larger than that of an α phosphorene bilayer.

scholarly journals Very high electron temperatures in the daytime F region at Sondrestrom

1984 ◽  
Vol 11 (9) ◽  
pp. 919-922 ◽  
Author(s):  
Wlodek Kofman ◽  
Vincent B. Wickwar
Keyword(s):  
High Electron ◽  
F Region ◽  
Very High

scholarly journals Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures

2008 ◽  
Vol 93 (8) ◽  
pp. 082111 ◽  
Author(s):  
A. M. Dabiran ◽  
A. M. Wowchak ◽  
A. Osinsky ◽  
J. Xie ◽  
B. Hertog ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Channel Conductivity ◽  
Very High

scholarly journals Channel Characteristics of InAs/AlSb Heterojunction Epitaxy: Comparative Study on Epitaxies with Different Thickness of InAs Channel and AlSb Upper Barrier

Coatings ◽  
2019 ◽  
Vol 9 (5) ◽  
pp. 318 ◽  
Author(s):  
He Guan ◽  
Shaoxi Wang ◽  
Lingli Chen ◽  
Bo Gao ◽  
Ying Wang ◽  
...  
Keyword(s):  
Barrier Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Electron Velocity ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Channel Thickness ◽  
The Impact ◽  
Different Thickness

Because of the high electron mobility and electron velocity in the channel, InAs/AlSb high electron mobility transistors (HEMTs) have excellent physical properties, compared with the other traditional III-V semiconductor components, such as ultra-high cut-off frequency, very low power consumption and good noise performance. In this paper, both the structure and working principle of InAs/AlSb HEMTs were studied, the energy band distribution of the InAs/AlSb heterojunction epitaxy was analyzed, and the generation mechanism and scattering mechanism of two-dimensional electron gas (2DEG) in InAs channel were demonstrated, based on the software simulation in detail. In order to discuss the impact of different epitaxial structures on the 2DEG and electron mobility in channel, four kinds of epitaxies with different thickness of InAs channel and AlSb upper-barrier were manufactured. The samples were evaluated with the contact Hall test. It is found the sample with a channel thickness of 15 nm and upper-barrier layer of 17 nm shows a best compromised sheet carrier concentration of 2.56 × 1012 cm−2 and electron mobility of 1.81 × 104 cm2/V·s, and a low sheet resistivity of 135 Ω/□, which we considered to be the optimized thickness of channel layer and upper-barrier layer. This study is a reference to further design InAs/AlSb HEMT, by ensuring a good device performance.

A Comparison of (100) Hg1−x Cdx Te and Hg1−x ZnxTe Grown By Molecular Beam Epitaxy

1987 ◽  
Vol 102 ◽  
Author(s):  
R. D. Feldman ◽  
R. F. Austin ◽  
P. M. Bridenbaugh
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Near Infrared ◽  
Wave Length ◽  
High Electron ◽  
Mbe Growth ◽  
Suitable Material ◽  
Zn Content ◽  
Length Range ◽  
Very High

ABSTRACTFilms of HgCdTe with x < 0.6 and of HgZnTe with x < 0.26 have been grown by molecular beam epitaxy (MBE). Very high electron mobilities have been achieved for both materials in the small bandgap region. Hall mobilities at 77K reach 4.8 × 105 cm2 /V-s for Hg0 87 Zn0.13 Te, and 3.1 × 105 cm2/V-s for Hg0.87 Zn0.13 Te. HgCdTe growth was easily extended to the 1.5 – 3 μm wave length range. Attempts to extend HgZnTe to these bandgaps were unsuccessful due to defects that are induced by surface roughness in high Zn-content films. These results suggest that HgCdTe is the more suitable material for MBE growth for near infrared applications.

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