Large-area electronics based on amorphous silicon

1987 ◽  
pp. 279-305 ◽  
Author(s):  
Karl Kempter
Keyword(s):  
Amorphous Silicon ◽  
Large Area ◽  
Large Area Electronics

scholarly journals Fabrication and Analysis of Amorphous Silicon TFT

2017 ◽  
Vol 7 (2) ◽  
pp. 754
Author(s):  
Srikanth G ◽  
Yadhuraj S R ◽  
Subramanyam T K ◽  
Satheesh Babu Gandla ◽  
Uma B V
Keyword(s):  
Amorphous Silicon ◽  
Active Layer ◽  
Semiconducting Materials ◽  
Large Area ◽  
Conducting Materials ◽  
Display Technology ◽  
Paper Fabrication ◽  
Large Area Electronics

The display technology and large area electronics got momentum with the introduction of TFT devices. TFTs can be made using different semiconducting materials or organic conducting materials as the active layer. Each one of them differ in their performance depending on the material used for the active layer. In this paper, fabrication of amorphous silicon TFT using PECVD is carried out. Simulation of the a-Si: H TFT is also carried out with the dimensions similar to that of the masks used for the fabrication. The I<sub>d</sub>-V<sub>d</sub> plot for both the simulation and fabrication is obtained and studied.

Hybrid Amorphous and Polycrystalline Silicon Devices for Large-Area Electronics

1998 ◽  
Vol 508 ◽  
Author(s):  
P. Mei ◽  
J. B. Boyce ◽  
D. K. Fork ◽  
G. Anderson ◽  
J. Ho ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Large Area ◽  
Silicon Thin Film ◽  
Device Structure ◽  
Short Channel ◽  
Simple Modification ◽  
Large Area Electronics

AbstractDistinct features of amorphous and polycrystalline silicon are attractive for large-area electronics. These features can be utilized in a hybrid structure which consists of both amorphous and polycrystalline silicon materials. For example, an extension of active matrix technology is the integration of peripheral drivers for the improvement of reliability, cost reduction and compactness of the packaging for large-area electronics. This goal can be approached by a combination of amorphous silicon pixel switches and polysilicon drivers. A monolithic fabrication process has been developed based on a simple modification of the amorphous silicon transistor process which uses selective area laser crystallization. This approach allows us to share many of the process steps involved in making both the amorphous and polysilicon devices. Another example of the hybrid device structure is a self-aligned amorphous silicon thin film transistor with polysilicon source and drain contacts. The advantages of the self-aligned transistor are reduction of the parasitic capacitance and scaling down of the device dimension. With a selective laser doping technique, self-aligned and short-channel amorphous silicon thin film transistors have been demonstrated.

Hybrid Amorphous and Polycrystalline Silicon Devices For Large-Area Electronics

1998 ◽  
Vol 507 ◽  
Author(s):  
P. Mei ◽  
J. B. Boyce ◽  
D. K. Fork ◽  
G. Anderson ◽  
J. Ho ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Hybrid Structure ◽  
Large Area ◽  
Silicon Thin Film ◽  
Device Structure ◽  
Simple Modification ◽  
Large Area Electronics

ABSTRACTDistinct features of amorphous and polycrystalline silicon are attractive for large-area electronics. These features can be utilized in a hybrid structure which consists of both amorphous and polycrystalline silicon materials. For example, an extension of active matrix technology is the integration of peripheral drivers for the improvement of reliability, cost reduction and compactness of the packaging for large-area electronics. This goal can be approached by a combination of amorphous silicon pixel switches and polysilicon drivers. A monolithic fabrication process has been developed based on a simple modification of the amorphous silicon transistor process which uses selective area laser crystallization. This approach allows us to share many of the process steps involved in making both the amorphous and polysilicon devices. Another example of the hybrid device structure is a self-aligned amorphous silicon thin film transistor with polysilicon source and drain contacts. The advantages of the self-aligned transistor are reduction of the parasitic capacitance and scaling down of the device dimension. With a selective laser doping technique, self-aligned and shortchannel amorphous silicon thin film transistors have been demonstrated.

Computer simulation study about the dependence of amorphous silicon photonic waveguides efficiency on the material quality

2020 ◽  
Vol 90 (3) ◽  
pp. 30502
Author(s):  
Alessandro Fantoni ◽  
João Costa ◽  
Paulo Lourenço ◽  
Manuela Vieira
Keyword(s):  
Amorphous Silicon ◽  
High Throughput Screening ◽  
Simulation Analysis ◽  
Low Cost ◽  
Deposition Process ◽  
Large Area ◽  
Sidewall Roughness ◽  
Sensing Applications ◽  
Fabrication Defects ◽  
The Impact

Amorphous silicon PECVD photonic integrated devices are promising candidates for low cost sensing applications. This manuscript reports a simulation analysis about the impact on the overall efficiency caused by the lithography imperfections in the deposition process. The tolerance to the fabrication defects of a photonic sensor based on surface plasmonic resonance is analysed. The simulations are performed with FDTD and BPM algorithms. The device is a plasmonic interferometer composed by an a-Si:H waveguide covered by a thin gold layer. The sensing analysis is performed by equally splitting the input light into two arms, allowing the sensor to be calibrated by its reference arm. Two different 1 × 2 power splitter configurations are presented: a directional coupler and a multimode interference splitter. The waveguide sidewall roughness is considered as the major negative effect caused by deposition imperfections. The simulation results show that plasmonic effects can be excited in the interferometric waveguide structure, allowing a sensing device with enough sensitivity to support the functioning of a bio sensor for high throughput screening. In addition, the good tolerance to the waveguide wall roughness, points out the PECVD deposition technique as reliable method for the overall sensor system to be produced in a low-cost system. The large area deposition of photonics structures, allowed by the PECVD method, can be explored to design a multiplexed system for analysis of multiple biomarkers to further increase the tolerance to fabrication defects.

Toward Manufacturing Low-Cost, Large-Area Electronics

MRS Bulletin ◽  
2006 ◽  
Vol 31 (6) ◽  
pp. 471-475 ◽  
Author(s):  
Marc Chason ◽  
Daniel R. Gamota ◽  
Paul W. Brazis ◽  
Krishna Kalyanasundaram ◽  
Jie Zhang ◽  
...  
Keyword(s):  
Printed Electronics ◽  
Low Cost ◽  
Consumer Products ◽  
Electronic Systems ◽  
Printed Wiring Board ◽  
Large Area ◽  
Active Devices ◽  
Materials Research ◽  
Wiring Board ◽  
Large Area Electronics

AbstractDevelopments originally targeted toward economical manufacturing of telecommunications products have planted the seeds for new opportunities such as low-cost, large-area electronics based on printing technologies. Organic-based materials systems for printed wiring board (PWB) construction have opened up unique opportunities for materials research in the fabrication of modular electronic systems.The realization of successful consumer products has been driven by materials developments that expand PWB functionality through embedded passive components, novel MEMS structures (e.g., meso-MEMS, in which the PWB-based structures are at the milliscale instead of the microscale), and microfluidics within the PWB. Furthermore, materials research is opening up a new world of printed electronics technology, where active devices are being realized through the convergence of printing technologies and microelectronics.

Excitation Frequency Effects on Stabilized Efficiency of Large-Area Amorphous Silicon Solar Cells Using Flexible Plastic Film Substrate

2003 ◽  
Vol 42 (Part 2, No. 11A) ◽  
pp. L1312-L1314 ◽  
Author(s):  
Akihiro Takano ◽  
Masayuki Tanda ◽  
Makoto Shimosawa ◽  
Takehito Wada ◽  
Tomoyoshi Kamoshita
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Excitation Frequency ◽  
Silicon Solar Cells ◽  
Plastic Film ◽  
Large Area ◽  
Frequency Effects ◽  
Film Substrate
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