Band offsets in heterostructures

2007 ◽  
pp. 251-275 ◽  
Author(s):  
Helmut Heinrich ◽  
Jerzy M. Langer
Keyword(s):  
Band Offsets

scholarly journals Computing with DFT Band Offsets at Semiconductor Interfaces: A Comparison of Two Methods

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1581
Author(s):  
José C. Conesa
Keyword(s):  
Significant Problem ◽  
Band Offsets ◽  
Semiconductor Interfaces ◽  
Hartree Potential ◽  
Hybrid Functionals

Two DFT-based methods using hybrid functionals and plane-averaged profiles of the Hartree potential (individual slabs versus vacuum and alternating slabs of both materials), which are frequently used to predict or estimate the offset between bands at interfaces between two semiconductors, are analyzed in the present work. These methods are compared using several very different semiconductor pairs, and the conclusions about the advantages of each method are discussed. Overall, the alternating slabs method is recommended in those cases where epitaxial mismatch does not represent a significant problem.

Band offsets, dielectric dispersion and some applications of CdSe/GeO2 heterojunctions

Optik ◽  
2021 ◽  
Vol 231 ◽  
pp. 166506
Author(s):  
Najla M. Khusayfan ◽  
A.F. Qasrawi ◽  
Seham R. Alharbi ◽  
Hazem K. Khanfar ◽  
T.S. Kayed
Keyword(s):  
Dielectric Dispersion ◽  
Band Offsets

Engineering the Band Offsets at the Back Contact Interface for Efficient Kesterite CZTSSe Solar Cells

2020 ◽  
Vol 3 (11) ◽  
pp. 10976-10982
Author(s):  
Afei Zhang ◽  
Zhaoyang Song ◽  
Zhengji Zhou ◽  
Yueqing Deng ◽  
Wenhui Zhou ◽  
...  
Keyword(s):  
Solar Cells ◽  
Back Contact ◽  
Contact Interface ◽  
Band Offsets

scholarly journals Investigation of Band Alignment for Hybrid 2D-MoS2/3D-β-Ga2O3 Heterojunctions with Nitridation

2019 ◽  
Vol 14 (1) ◽  
Author(s):  
Ya-Wei Huan ◽  
Ke Xu ◽  
Wen-Jun Liu ◽  
Hao Zhang ◽  
Dmitriy Anatolyevich Golosov ◽  
...  
Keyword(s):  
Valence Band ◽  
Transition Metal Dichalcogenides ◽  
Three Dimensional ◽  
Optoelectronic Devices ◽  
Band Alignment ◽  
Band Offsets ◽  
Group Iii ◽  
Nanoelectronic Devices ◽  
Metal Dichalcogenides ◽  
Band Alignments

AbstractHybrid heterojunctions based on two-dimensional (2D) and conventional three-dimensional (3D) materials provide a promising way toward nanoelectronic devices with engineered features. In this work, we investigated the band alignment of a mixed-dimensional heterojunction composed of transferred MoS2 on β-Ga2O3($$ 2- $$2-01) with and without nitridation. The conduction and valence band offsets for unnitrided 2D-MoS2/3D-β-Ga2O3 heterojunction were determined to be respectively 0.43 ± 0.1 and 2.87 ± 0.1 eV. For the nitrided heterojunction, the conduction and valence band offsets were deduced to 0.68 ± 0.1 and 2.62 ± 0.1 eV, respectively. The modified band alignment could result from the dipole formed by charge transfer across the heterojunction interface. The effect of nitridation on the band alignments between group III oxides and transition metal dichalcogenides will supply feasible technical routes for designing their heterojunction-based electronic and optoelectronic devices.

Observation of above-barrier transitions in superlattices with small magnetically induced band offsets

1994 ◽  
Vol 50 (24) ◽  
pp. 18153-18166 ◽  
Author(s):  
N. Dai ◽  
L. R. Ram-Mohan ◽  
H. Luo ◽  
G. L. Yang ◽  
F. C. Zhang ◽  
...  
Keyword(s):  
Band Offsets

A Purely Spectroscopic Technique for Determining Energy Band Offsets in Quantum Wells

1991 ◽  
Vol 240 ◽  
Author(s):  
Emil S. Koteies
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Accurate Determination ◽  
Energy Difference ◽  
Spectroscopic Technique ◽  
Band Offsets ◽  
Band Energy ◽  
Semiconductor Quantum Wells ◽  
Sensitive Function

ABSTRACTWe have developed a novel experimental technique for accurately determining band offsets in semiconductor quantum wells (QW). It is based on the fact that the ground state heavy- hole (HH) band energy is more sensitive to the depth of the valence band well than the light-hole (LH) band energy. Further, it is well known that as a function of the well width, Lz, the energy difference between the LH and HH excitons in a lattice matched, unstrained QW system experiences a maximum. Calculations show that the position, and more importantly, the magnitude of this maximum is a sensitive function of the valence band offset, Qy, which determines the depth of the valence band well. By fitting experimentally measured LH-HH splittings as a function of Lz, an accurate determination of band offsets can be derived. We further reduce the experimental uncertainty by plotting LH-HH as a function of HH energy (which is a function of Lz ) rather than Lz itself, since then all of the relevant parameters can be precisely determined from absorption spectroscopy alone. Using this technique, we have derived the conduction band offsets for several material systems and, where a consensus has developed, have obtained values in good agreement with other determinations.

Measurement of heterojunction band offsets by admittance spectroscopy: InP/Ga0.47In0.53As

1987 ◽  
Vol 50 (12) ◽  
pp. 736-738 ◽  
Author(s):  
D. V. Lang ◽  
M. B. Panish ◽  
F. Capasso ◽  
J. Allam ◽  
R. A. Hamm ◽  
...  
Keyword(s):  
Admittance Spectroscopy ◽  
Band Offsets

Band offsets at pseudo-ternary semiconductor-alloy heterojunctions

1986 ◽  
Vol 174 (1-3) ◽  
pp. 337-342 ◽  
Author(s):  
Masao Nakao ◽  
Shun-ichi Gonda
Keyword(s):  
Band Offsets ◽  
Semiconductor Alloy ◽  
Ternary Semiconductor

Band offsets at heterojunctions between SrTiO3 and BaTiO3 and Si(100)

2004 ◽  
Vol 96 (3) ◽  
pp. 1635-1639 ◽  
Author(s):  
F. Amy ◽  
A. S. Wan ◽  
A. Kahn ◽  
F. J. Walker ◽  
R. A. McKee
Keyword(s):  
Band Offsets
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