Confined carrier quantum states in ultrathin semiconductor heterostructures

2007 ◽  
pp. 21-48 ◽  
Author(s):  
Raymond Dingle
Keyword(s):  
Quantum States ◽  
Semiconductor Heterostructures

Interlayer mixing in GaAs/AlxGa1-xAs heterostructures as a result of Se+ ion implantation

1988 ◽  
Vol 46 ◽  
pp. 908-909
Author(s):  
E.G. Bithell ◽  
W.M. Stobbs
Keyword(s):  
Ion Implantation ◽  
Diffusion Coefficients ◽  
Dark Field ◽  
Atomic Mass ◽  
Composition Profile ◽  
Semiconductor Heterostructures ◽  
Transmission Electron ◽  
Microscope Images ◽  
Damage Process ◽  
Electron Energy Loss

It is well known that the microstructural consequences of the ion implantation of semiconductor heterostructures can be severe: amorphisation of the damaged region is possible, and layer intermixing can result both from the original damage process and from the enhancement of the diffusion coefficients for the constituents of the original composition profile. A very large number of variables are involved (the atomic mass of the target, the mass and energy of the implant species, the flux and the total dose, the substrate temperature etc.) so that experimental data are needed despite the existence of relatively well developed models for the implantation process. A major difficulty is that conventional techniques (e.g. electron energy loss spectroscopy) have inadequate resolution for the quantification of any changes in the composition profile of fine scale multilayers. However we have demonstrated that the measurement of 002 dark field intensities in transmission electron microscope images of GaAs / AlxGa1_xAs heterostructures can allow the measurement of the local Al / Ga ratio.

Geometry of Quantum States

2006 ◽  
Author(s):  
Ingemar Bengtsson ◽  
Karol Zyczkowski
Keyword(s):  
Quantum States

Transport of quantum states of periodically driven systems

1990 ◽  
Vol 51 (8) ◽  
pp. 709-722 ◽  
Author(s):  
H.P. Breuer ◽  
K. Dietz ◽  
M. Holthaus
Keyword(s):  
Quantum States ◽  
Driven Systems ◽  
Periodically Driven

Quantum States & Processes

1994 ◽  
Vol 187 (Part_1) ◽  
pp. 156-156
Author(s):  
H.-J. Unger
Keyword(s):  
Quantum States

Light-Induced Drift of Quantum-Confined Electrons in Semiconductor Heterostructures

1990 ◽  
Author(s):  
Mark I. Stockman ◽  
Lakshmi N. Pandey ◽  
Thomas F. George
Keyword(s):  
Semiconductor Heterostructures ◽  
Quantum Confined

“Non-locality”

2017 ◽  
Author(s):  
Richard Healey
Keyword(s):  
Quantum Theory ◽  
Quantum Entanglement ◽  
Quantum States ◽  
Entangled States ◽  
Entangled Quantum States ◽  
Action At A Distance ◽  
Insight Into ◽  
Non Locality

Quantum entanglement is popularly believed to give rise to spooky action at a distance of a kind that Einstein decisively rejected. Indeed, important recent experiments on systems assigned entangled states have been claimed to refute Einstein by exhibiting such spooky action. After reviewing two considerations in favor of this view I argue that quantum theory can be used to explain puzzling correlations correctly predicted by assignment of entangled quantum states with no such instantaneous action at a distance. We owe both considerations in favor of the view to arguments of John Bell. I present simplified forms of these arguments as well as a game that provides insight into the situation. The argument I give in response turns on a prescriptive view of quantum states that differs both from Dirac’s (as stated in Chapter 2) and Einstein’s.

Quantum optics with nitrogen-vacancy centres in diamond

2017 ◽  
Author(s):  
Yiwen Chu ◽  
Mikhail D. Lukin
Keyword(s):  
Optical Properties ◽  
Quantum Information ◽  
Solid State ◽  
Quantum Optics ◽  
Quantum States ◽  
Nitrogen Vacancy ◽  
Common Theme ◽  
External Effects ◽  
Promising Candidate ◽  
Optical Photons

A common theme in the implementation of quantum technologies involves addressing the seemingly contradictory needs for controllability and isolation from external effects. Undesirable effects of the environment must be minimized, while at the same time techniques and tools must be developed that enable interaction with the system in a controllable and well-defined manner. This chapter addresses several aspects of this theme with regard to a particularly promising candidate for developing applications in both metrology and quantum information, namely the nitrogen-vacancy (NV) centre in diamond. The chapter describes how the quantum states of NV centres can be manipulated, probed, and efficiently coupled with optical photons. It also discusses ways of tackling the challenges of controlling the optical properties of these emitters inside a complex solid state environment.

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