Quantum diffusions on the rotation algebras and the quantum hall effect

1990 ◽  
pp. 326-333 ◽  
Author(s):  
Paul Robinson
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall

Localization and many-body interactions in the quantum Hall effect determined by polarized optical emission

1991 ◽  
Vol 44 (8) ◽  
pp. 4006-4009 ◽  
Author(s):  
B. B. Goldberg ◽  
D. Heiman ◽  
M. Dahl ◽  
A. Pinczuk ◽  
L. Pfeiffer ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Optical Emission ◽  
Many Body ◽  
Many Body Interactions

Quantum Hall effect in a saddle-point system

1998 ◽  
Vol 2 (1-4) ◽  
pp. 523-526
Author(s):  
M.V Budantsev ◽  
Z.D Kvon ◽  
A.G Pogosov ◽  
E.B Olshanetskii ◽  
D.K Maude ◽  
...  
Keyword(s):  
Saddle Point ◽  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Point System ◽  
Saddle Point System

Photonic quantum Hall effect and multiplexed light sources of large orbital angular momenta

2021 ◽  
Author(s):  
Babak Bahari ◽  
Liyi Hsu ◽  
Si Hui Pan ◽  
Daryl Preece ◽  
Abdoulaye Ndao ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Light Sources ◽  
Angular Momenta

scholarly journals An all-epitaxial nitride heterostructure with concurrent quantum Hall effect and superconductivity

2021 ◽  
Vol 7 (8) ◽  
pp. eabf1388
Author(s):  
Phillip Dang ◽  
Guru Khalsa ◽  
Celesta S. Chang ◽  
D. Scott Katzer ◽  
Neeraj Nepal ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Electron Gas ◽  
Quantum Hall ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
2D Electron Gas ◽  
Integer Quantum Hall Effect ◽  
Topological Quantum ◽  
Integer Quantum

Creating seamless heterostructures that exhibit the quantum Hall effect and superconductivity is highly desirable for future electronics based on topological quantum computing. However, the two topologically robust electronic phases are typically incompatible owing to conflicting magnetic field requirements. Combined advances in the epitaxial growth of a nitride superconductor with a high critical temperature and a subsequent nitride semiconductor heterostructure of metal polarity enable the observation of clean integer quantum Hall effect in the polarization-induced two-dimensional (2D) electron gas of the high-electron mobility transistor. Through individual magnetotransport measurements of the spatially separated GaN 2D electron gas and superconducting NbN layers, we find a small window of magnetic fields and temperatures in which the epitaxial layers retain their respective quantum Hall and superconducting properties. Its analysis indicates that in epitaxial nitride superconductor/semiconductor heterostructures, this window can be significantly expanded, creating an industrially viable platform for robust quantum devices that exploit topologically protected transport.

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