Regenerative Simulation of Response Times in Networks of Queues

1978 ◽  
Vol 25 (3) ◽  
pp. 449-460 ◽  
Author(s):  
Donald L. Iglehart ◽  
Gerald S. Shedler

1983 ◽  
Vol 15 (1) ◽  
pp. 183-197 ◽  
Author(s):  
Donald L. Iglehart ◽  
Gerald S. Shedler

This paper is concerned with the assessment of the statistical efficiency of proposed regenerative simulation methods. We compare the efficiency of the ‘marked job' and ‘labelled jobs' methods for estimation of passage times in multiclass networks of queues with general service times. Using central limit theorem arguments, we show that the confidence intervals constructed for the expected value of a general function of the limiting passage time using the labelled jobs method are shorter than those obtained from the marked job method. This is consistent with intuition since the labelled jobs method extracts more passage-time information from a fixed-length simulation run.


1983 ◽  
Vol 15 (01) ◽  
pp. 183-197 ◽  
Author(s):  
Donald L. Iglehart ◽  
Gerald S. Shedler

This paper is concerned with the assessment of the statistical efficiency of proposed regenerative simulation methods. We compare the efficiency of the ‘marked job' and ‘labelled jobs' methods for estimation of passage times in multiclass networks of queues with general service times. Using central limit theorem arguments, we show that the confidence intervals constructed for the expected value of a general function of the limiting passage time using the labelled jobs method are shorter than those obtained from the marked job method. This is consistent with intuition since the labelled jobs method extracts more passage-time information from a fixed-length simulation run.


1978 ◽  
Vol 26 (5) ◽  
pp. 896-914 ◽  
Author(s):  
Donald L. Iglehart ◽  
Gerald S. Shedler

Author(s):  
M.J. Kim ◽  
L.C. Liu ◽  
S.H. Risbud ◽  
R.W. Carpenter

When the size of a semiconductor is reduced by an appropriate materials processing technique to a dimension less than about twice the radius of an exciton in the bulk crystal, the band like structure of the semiconductor gives way to discrete molecular orbital electronic states. Clusters of semiconductors in a size regime lower than 2R {where R is the exciton Bohr radius; e.g. 3 nm for CdS and 7.3 nm for CdTe) are called Quantum Dots (QD) because they confine optically excited electron- hole pairs (excitons) in all three spatial dimensions. Structures based on QD are of great interest because of fast response times and non-linearity in optical switching applications.In this paper we report the first HREM analysis of the size and structure of CdTe and CdS QD formed by precipitation from a modified borosilicate glass matrix. The glass melts were quenched by pouring on brass plates, and then annealed to relieve internal stresses. QD precipitate particles were formed during subsequent "striking" heat treatments above the glass crystallization temperature, which was determined by differential thermal analysis.


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